RJK6011DJE-00-Z0

RJK6011DJE Silicon N Channel MOS FET High Speed Power Switching REJ03G1577-0300 Rev.3.00 Oct 03, 2008 Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) D G 1. Source 2. Drain 3. Gate 32 S 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 Pch θch-a Tch Tstg Ratings 600 ±30 0.1 0.4 0.1 0.4 0.9 139 150 –55 to +150 Unit V V A A A A W °C/W °C °C REJ03G1577-0300 Rev.3.00 Oct 03, 2008 Page 1 of 6 RJK6011DJE Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF Min 600 — — 3 — — — — — — — — — — — — Typ — — — — 35 25 4.7 0.9 33 16 54 300 3.7 0.4 2.7 0.80 Max — 1 ±0.1 5 52 — — — — — — — — — — 1.35 Unit V µA µA V Ω pF pF pF ns ns ns ns nC nC nC V Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 0.05 A, VGS = 10 V Note2 VDS = 25 V VGS = 0 f = 1 MHz ID = 0.05 A VGS = 10 V RL = 6000 Ω Rg = 10 Ω VDD = 480 V VGS = 10 V ID = 0.1 A IF = 0.1 A, VGS = 0 Note2 Notes: 2. Pulse test 3. Since this device is equipped with high voltage FET chip (VDSS ≥ 600 V), high voltage may be supplied. Therefore, please be sure to confirm about Electric discharge between Drain terminal and other terminal. REJ03G1577-0300 Rev.3.00 Oct 03, 2008 Page 2 of 6 RJK6011DJE Main Characteristics Maximum Safe Operation Area 10 0.4 Pulse Test Ta = 25°C 5.8 V 6V 8V Typical Output Characteristics Drain Current ID (A) Drain Current ID (A) 1 10 µs 0.3 VGS = 10 V 5.6 V 0.1 PW = 100 µs 0.2 5.4 V 5.2 V 5V 0.01 Operation in this area is limited by RDS(on) 0.1 0.001 0.0001 0.1 Ta = 25°C 1 shot 1 10 100 1000 0 4 8 12 16 20 Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V) Static Drain to Source on State Resistance vs. Drain Current (Typical) Drain to Source on State Resistance RDS(on) (Ω) 1 Pulse Test VGS = 10 V Ta = 25°C 50 Typical Transfer Characteristics 0.1 VDS = 10 V Pulse Test Drain Current ID (A) 0.01 25°C 0.001 Tc = 75°C −25°C 20 0.0001 0 2 4 6 8 10 10 0.01 0.1 1 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature (Typical) 100 Pulse Test VGS = 10 V 0.05 A ID = 0.1 A 60 0.025 A 40 100 Drain Current ID (A) Static Drain to Source on State Resistance RDS(on) (Ω) Typical Capacitance vs. Drain to Source Voltage (Typical) Capacitance C (pF) 80 Ciss 10 Coss 1 VGS = 0 f = 1 MHz Ta = 25°C 100 200 300 Crss 20 0 -25 0 25 50 75 100 125 150 0.1 0 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) REJ03G1577-0300 Rev.3.00 Oct 03, 2008 Page 3 of 6 RJK6011DJE Reverse Drain Current vs. Source to Drain Voltage (Typical) Gate to Source Voltage VGS (V) 0.4 Dynamic Input Characteristics (Typical) Drain to Source Voltage VDS (V) 800 Reverse Drain Current IDR (A) =1 ID = 0.1 A Ta = 25 °C VGS 0V 16 Pulse Test Ta = 25 °C 00 V DD V 30 VDS 400 480 V 600 12 0.3 8 0.2 5 V, 10 V 0.1 VGS = 0, −5 V 0 200 10 0 V 30 0 V VDD = 480 V 4 0 0 0.8 1.6 2.4 3.2 4.0 0.4 0.8 1.2 1.6 2.0 Gate Charge Qg (nC) Source to Drain Voltage VSD (V) Gate to Source Cutoff Voltage VGS(off) (V) Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 6 VDS = 10 V ID = 10 mA 1 mA 4 0.1 mA 5 3 2 1 -25 0 25 50 75 100 125 150 Case Temperature Tc (°C) REJ03G1577-0300 Rev.3.00 Oct 03, 2008 Page 4 of 6 RJK6011DJE Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 10 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 lse t pu sho 1 θch – a (t) = γ s (t) • θch – a θch – a = 139°C/W, Ta = 25°C PDM PW T 1m 10 m 100 m 1 10 100 1000 10000 D= PW T 0.01 10 µ 100 µ Pulse Width PW (s) Switching Time Test Circuit Vin Monitor D.U.T. RL 10 Ω Vin 10 V VDD = 300 V Vin Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(on) tr 90% td(off) tf REJ03G1577-0300 Rev.3.00 Oct 03, 2008 Page 5 of 6 RJK6011DJE Package Dimensions Package Name TO-92 Mod JEITA Package Code SC-51 RENESAS Code PRSS0003DC-A Previous Code TO-92 Mod / TO-92 ModV MASS[Typ.] 0.35g Unit: mm 4.8 ± 0.4 3.8 ± 0.4 0.65 ± 0.1 0.75 Max 0.55 Max 0.60 Max 2.3 Max 0.7 10.1 Min 8.0 ± 0.5 0.5 Max 1.27 2.54 Since RJK6011DJE is equipped with high voltage FET chip (VDSS ≥ 600 V), high voltage may be supplied. Therefore, please be sure to confirm about Electric discharge between Drain terminal and other terminal. Ordering Information Part No. RJK6011DJE-00-Z0 Quantity 2500 pcs Shipping Container Hold Box, Radial Taping REJ03G1577-0300 Rev.3.00 Oct 03, 2008 Page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. 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