RJK6012DPP_10

Preliminary Datasheet RJK6012DPP Silicon N Channel MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.77  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching REJ03G1581-0200 Rev.2.00 Jun 30, 2010 Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1. Gate 2. Drain 3. Source 1 23 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4. PW  10 s, duty cycle  1% Value at Tc = 25C STch = 25C, Tch  150C Limited by maximum safe operation area Symbol VDSS VGSS Note4 ID ID (pulse) IDR Note1 IDR (pulse) Note3 IAP Note3 EAR Pch Note2 ch-c Tch Tstg Note1 Ratings 600 30 10 20 10 20 3 0.49 30 4.17 150 –55 to +150 Unit V V A A A A A mJ W C/W C C REJ03G1581-0200 Rev.2.00 Jun 30, 2010 Page 1 of 6 RJK6012DPP Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 5. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 600 — — 3.0 — — — — — — — — — — — — — Typ — — — — 0.77 1100 110 13 30 22 80 17 30 6.5 14.5 0.88 350 Max — 1 0.1 4.5 0.92 — — — — — — — — — — 1.50 — Unit V A A V  pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 5 A, VGS = 10 V Note 5 VDS = 25 V VGS = 0 f = 1 MHz ID = 5 A VGS = 10 V RL = 60  Rg = 10  VDD = 480 V VGS = 10 V ID = 10 A IF = 10 A, VGS = 0 Note5 IF = 10 A, VGS = 0 diF/dt = 100 A/s REJ03G1581-0200 Rev.2.00 Jun 30, 2010 Page 2 of 6 RJK6012DPP Preliminary Main Characteristics Maximum Safe Operation Area 100 20 Typical Output Characteristics Ta = 25°C Pulse Test 10 μs Drain Current ID (A) Drain Current ID (A) 10 PW 5.75 V = 16 10 6V 7 V, 8 V, 10 V 0 1 Operation in this area is limited by RDS(on) Tc = 25°C 1 shot 0.001 0.1 1 10 100 μs 12 5.5 V 0.1 8 5.25 V 0.01 4 5V VGS = 4.75 V 1000 0 0 4 8 12 16 20 Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V) Static Drain to Source on State Resistance vs. Drain Current (Typical) Drain to Source on State Resistance RDS(on) (Ω) 10 VGS = 10 V Ta = 25°C Pulse Test Typical Transfer Characteristics 100 VDS = 10 V Pulse Test Drain Current ID (A) 10 1 1 0.1 Tc = 75°C 25°C −25°C 0.01 2 3 4 5 6 0.1 1 10 100 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature (Typical) 2.4 2.0 1.6 1.2 2.5 A 0.8 0.4 0 -25 5A VGS = 10 V Pulse Test ID = 10 A Drain Current ID (A) Static Drain to Source on State Resistance RDS(on) (Ω) Body-Drain Diode Reverse Recovery Time (Typical) Reverse Recovery Time trr (ns) 1000 100 di / dt = 100 A / μs VGS = 0, Ta = 25°C 10 1 10 100 0 25 50 75 100 125 150 Case Temperature Tc (°C) Reverse Drain Current IDR (A) REJ03G1581-0200 Rev.2.00 Jun 30, 2010 Page 3 of 6 RJK6012DPP Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) 10000 Preliminary Dynamic Input Characteristics (Typical) ID = 10 A Ta = 25 °C VGS Capacitance C (pF) 1000 Ciss 600 VDS VDD = 100 V 400 300 V 480 V 12 100 Coss 10 VGS = 0 f = 1 MHz Ta = 25°C 100 200 300 8 Crss 200 VDD = 480 V 300 V 100 V 10 20 30 40 4 1 0 0 50 0 Drain to Source Voltage VDS (V) Gate Charge Qg (nC) 20 Gate to Source Cutoff Voltage VGS(off) (V) Reverse Drain Current vs. Source to Drain Voltage (Typical) Reverse Drain Current IDR (A) VGS = 0 V Ta = 25 °C Pulse Test Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 5 VDS = 10 V 16 4 12 3 ID = 10 mA 1 mA 0.1 mA 8 4 2 1 0 0 0.4 0.8 1.2 1.6 2.0 0 -25 0 25 50 75 100 125 150 Source to Drain Voltage VSD (V) Case Temperature Tc (°C) REJ03G1581-0200 Rev.2.00 Jun 30, 2010 Page 4 of 6 Gate to Source Voltage VGS (V) 800 16 RJK6012DPP Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 10 TC = 25°C D=1 0.5 0.2 0.1 0.1 Preliminary 1 0.05 0.02 0.01 0.01 1S ho tP e uls θch–c(t) = γS (t) • θch–c θch–c = 4.17°C/W, TC = 25°C PDM D = PW T PW T 1m 10 m 100 m 1 10 0.001 10 μ 100 μ Pulse Width PW (s) Switching Time Test Circuit Vin Monitor D.U.T. RL 10 Ω Vin 10 V VDD = 300 V Vin Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(on) tr 90% td(off) tf REJ03G1581-0200 Rev.2.00 Jun 30, 2010 Page 5 of 6 RJK6012DPP Preliminary Package Dimensions Package Name TO-220FN JEITA Package Code ⎯ RENESAS Code PRSS0003AB-A Previous Code ⎯ MASS[Typ.] 2.0g Unit: mm 10 ± 0.3 2.8 ± 0.2 15 ± 0.3 φ3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 Ordering Information Part No. RJK6012DPP-00-T2 Quantity 1050 pcs Box (Tube) Shipping Container REJ03G1581-0200 Rev.2.00 Jun 30, 2010 2.6 ± 0.2 4.5 ± 0.2 6.5 ± 0.3 3 ± 0.3 Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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