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RJK6012DPP_10

RJK6012DPP_10

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

  • 描述:

    RJK6012DPP_10 - Silicon N Channel MOS FET High Speed Power Switching - Renesas Technology Corp

  • 数据手册
  • 价格&库存
RJK6012DPP_10 数据手册
Preliminary Datasheet RJK6012DPP Silicon N Channel MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.77  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching REJ03G1581-0200 Rev.2.00 Jun 30, 2010 Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1. Gate 2. Drain 3. Source 1 23 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4. PW  10 s, duty cycle  1% Value at Tc = 25C STch = 25C, Tch  150C Limited by maximum safe operation area Symbol VDSS VGSS Note4 ID ID (pulse) IDR Note1 IDR (pulse) Note3 IAP Note3 EAR Pch Note2 ch-c Tch Tstg Note1 Ratings 600 30 10 20 10 20 3 0.49 30 4.17 150 –55 to +150 Unit V V A A A A A mJ W C/W C C REJ03G1581-0200 Rev.2.00 Jun 30, 2010 Page 1 of 6 RJK6012DPP Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 5. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 600 — — 3.0 — — — — — — — — — — — — — Typ — — — — 0.77 1100 110 13 30 22 80 17 30 6.5 14.5 0.88 350 Max — 1 0.1 4.5 0.92 — — — — — — — — — — 1.50 — Unit V A A V  pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 5 A, VGS = 10 V Note 5 VDS = 25 V VGS = 0 f = 1 MHz ID = 5 A VGS = 10 V RL = 60  Rg = 10  VDD = 480 V VGS = 10 V ID = 10 A IF = 10 A, VGS = 0 Note5 IF = 10 A, VGS = 0 diF/dt = 100 A/s REJ03G1581-0200 Rev.2.00 Jun 30, 2010 Page 2 of 6 RJK6012DPP Preliminary Main Characteristics Maximum Safe Operation Area 100 20 Typical Output Characteristics Ta = 25°C Pulse Test 10 μs Drain Current ID (A) Drain Current ID (A) 10 PW 5.75 V = 16 10 6V 7 V, 8 V, 10 V 0 1 Operation in this area is limited by RDS(on) Tc = 25°C 1 shot 0.001 0.1 1 10 100 μs 12 5.5 V 0.1 8 5.25 V 0.01 4 5V VGS = 4.75 V 1000 0 0 4 8 12 16 20 Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V) Static Drain to Source on State Resistance vs. Drain Current (Typical) Drain to Source on State Resistance RDS(on) (Ω) 10 VGS = 10 V Ta = 25°C Pulse Test Typical Transfer Characteristics 100 VDS = 10 V Pulse Test Drain Current ID (A) 10 1 1 0.1 Tc = 75°C 25°C −25°C 0.01 2 3 4 5 6 0.1 1 10 100 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature (Typical) 2.4 2.0 1.6 1.2 2.5 A 0.8 0.4 0 -25 5A VGS = 10 V Pulse Test ID = 10 A Drain Current ID (A) Static Drain to Source on State Resistance RDS(on) (Ω) Body-Drain Diode Reverse Recovery Time (Typical) Reverse Recovery Time trr (ns) 1000 100 di / dt = 100 A / μs VGS = 0, Ta = 25°C 10 1 10 100 0 25 50 75 100 125 150 Case Temperature Tc (°C) Reverse Drain Current IDR (A) REJ03G1581-0200 Rev.2.00 Jun 30, 2010 Page 3 of 6 RJK6012DPP Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) 10000 Preliminary Dynamic Input Characteristics (Typical) ID = 10 A Ta = 25 °C VGS Capacitance C (pF) 1000 Ciss 600 VDS VDD = 100 V 400 300 V 480 V 12 100 Coss 10 VGS = 0 f = 1 MHz Ta = 25°C 100 200 300 8 Crss 200 VDD = 480 V 300 V 100 V 10 20 30 40 4 1 0 0 50 0 Drain to Source Voltage VDS (V) Gate Charge Qg (nC) 20 Gate to Source Cutoff Voltage VGS(off) (V) Reverse Drain Current vs. Source to Drain Voltage (Typical) Reverse Drain Current IDR (A) VGS = 0 V Ta = 25 °C Pulse Test Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 5 VDS = 10 V 16 4 12 3 ID = 10 mA 1 mA 0.1 mA 8 4 2 1 0 0 0.4 0.8 1.2 1.6 2.0 0 -25 0 25 50 75 100 125 150 Source to Drain Voltage VSD (V) Case Temperature Tc (°C) REJ03G1581-0200 Rev.2.00 Jun 30, 2010 Page 4 of 6 Gate to Source Voltage VGS (V) 800 16 RJK6012DPP Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 10 TC = 25°C D=1 0.5 0.2 0.1 0.1 Preliminary 1 0.05 0.02 0.01 0.01 1S ho tP e uls θch–c(t) = γS (t) • θch–c θch–c = 4.17°C/W, TC = 25°C PDM D = PW T PW T 1m 10 m 100 m 1 10 0.001 10 μ 100 μ Pulse Width PW (s) Switching Time Test Circuit Vin Monitor D.U.T. RL 10 Ω Vin 10 V VDD = 300 V Vin Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(on) tr 90% td(off) tf REJ03G1581-0200 Rev.2.00 Jun 30, 2010 Page 5 of 6 RJK6012DPP Preliminary Package Dimensions Package Name TO-220FN JEITA Package Code ⎯ RENESAS Code PRSS0003AB-A Previous Code ⎯ MASS[Typ.] 2.0g Unit: mm 10 ± 0.3 2.8 ± 0.2 15 ± 0.3 φ3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 Ordering Information Part No. RJK6012DPP-00-T2 Quantity 1050 pcs Box (Tube) Shipping Container REJ03G1581-0200 Rev.2.00 Jun 30, 2010 2.6 ± 0.2 4.5 ± 0.2 6.5 ± 0.3 3 ± 0.3 Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. 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Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. 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Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) (Note 2) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. 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