RJK6013DPP-E0#T2

Datasheet RJK6012DPP-A0 R07DS1420EJ0102 Rev.1.02 Nov.15.2019 600V - 10A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.77  typ. (at ID = 5 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching  Quality grade: Standard Outline RENESAS Package code: PRSS0003AP-A (Package name: TO-220FPA) D 1. Gate 2. Drain 3. Source G 1 2 3 S Absolute Maximum Ratings (Ta = 25 C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID Note4 IDR (pulse) Note1 IAP Note3 EAR Note3 Pch Note2 Tch Ratings 600 30 10 20 10 20 3 0.49 30 150 Unit V V A A A A A mJ W C Tstg 55 to +150 C ID (pulse)Note1 IDR Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect a reliability even if it is within the absolute maximum ratings. Please consider derating condition for appropriate reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage of Semiconductor Devices) and individual reliability data . Notes: 1. 2. 3. 4. PW  10 s, duty cycle  1 % Value at Tc = 25 C STch = 25 C, Tch  150 C Limited by maximum safe operation area R07DS1420EJ0102 Rev.1.02 Nov.15.2019 Page 1 of 6 RJK6012DPP-A0 Thermal Resistance Characteristics (Ta = 25 C) Item Symbol Max. Value ch-c Channel to case thermal impedance Notes5 4.17 Unit CW Notes: 5. Designed target value on Renesas measurement condition. (Not tested) Electrical Characteristics (Ta = 25 C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Min 600 — — 3.0 — Typ — — — — 0.77 Max — 1 0.1 4.5 0.92 Unit V A A V  Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr — — — — — — — — — — — — 1100 110 13 30 22 80 17 30 6.5 14.5 0.88 350 — — — — — — — — — — 1.50 — pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 5 A, VGS = 10 V Note6 VDS = 25 V VGS = 0 f = 1 MHz ID = 5 A VGS = 10 V RL = 60  Rg = 10  VDD = 480 V VGS = 10 V ID = 10 A IF = 10 A, VGS = 0 Note6 IF = 10 A, VGS = 0 diFdt = 100 As Notes: 6. Pulse test R07DS1420EJ0102 Rev.1.02 Nov.15.2019 Page 2 of 6 RJK6012DPP-A0 Main Characteristics Maximum Safe Operation Area Typical Output Characteristics 100 20 Ta = 25C Pulse Test = 10 0 1 Drain Current ID (A) PW 10 s Operation in this area is limited by RDS(on) 0.1 0.01 Tc = 25C 1 shot Notes 7 0.001 0.1 1 10 100 8 5.25 V 4 5V 0 4 8 12 16 Typical Transfer Characteristics Static Drain to Source on State Resistance vs. Drain Current (Typical) 10 1 Tc = 75C 0.1 25C 25C 2 3 4 5 6 10 VGS = 10 V Ta = 25C Pulse Test 1 0.1 1 10 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Resistance vs. Temperature (Typical) Body-Drain Diode Reverse Recovery Time (Typical) 2.4 2.0 20 Drain to Source Voltage VDS (V) Drain to Source on State Resistance RDS(on) () Drain Current ID (A) 5.5 V Drain to Source Voltage VDS (V) VDS = 10 V Pulse Test Static Drain to Source on State Resistance RDS(on) () 7 V, 8 V, 10 V 6V 12 0 1000 100 0.01 5.75 V 16 VGS = 4.75 V VGS = 10 V Pulse Test ID = 10 A 1.6 1.2 2.5 A 5A 0.8 0.4 0 -25 0 25 50 75 100 125 150 Case Temperature Tc (C) Reverse Recovery Time trr (ns) Drain Current ID (A) 10 s 100 1000 100 di / dt = 100 A / s VGS = 0, Ta = 25C 10 1 10 100 Reverse Drain Current IDR (A) Notes: 7. Designed target value on Renesas measurement condition. (Not tested) Renesas recommends that operating conditions are designed according to a document “Power MOS FET・ IGBT Attention of Handling Semiconductor Devices”. R07DS1420EJ0102 Rev.1.02 Nov.15.2019 Page 3 of 6 RJK6012DPP-A0 Typical Capacitance vs. Drain to Source Voltage 100 Coss 10 1 0 Crss VGS = 0 f = 1 MHz Ta = 25C 100 200 300 Reverse Drain Current IDR (A) VGS 600 VDD = 100 V 400 300 V 480 V 200 10 0 20 0 30 40 Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 12 8 4 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) R07DS1420EJ0102 Rev.1.02 Nov.15.2019 5 8 4 VDD = 480 V 300 V 100 V Reverse Drain Current vs. Source to Drain Voltage (Typical) VGS = 0 V Ta = 25 C Pulse Test 16 12 VDS Gate Charge Qg (nC) 16 0 ID = 10 A Ta = 25 C Drain to Source Voltage VDS (V) 20 0 800 Gate to Source Voltage VGS (V) Ciss 1000 Gate to Source Cutoff Voltage VGS(off) (V) Capacitance C (pF) 10000 Drain to Source Voltage VDS (V) Dynamic Input Characteristics (Typical) 50 VDS = 10 V 4 3 ID = 10 mA 1 mA 0.1 mA 2 1 0 -25 0 25 50 75 Case Temperature 100 125 150 Tc (C) Page 4 of 6 RJK6012DPP-A0 Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 TC = 25C Notes 8 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 ho 1S uls tP 0.001 10  ch–c(t) = S (t) ꞏ ch–c ch–c = 4.17C/W, TC = 25C PDM PW D= T PW T e 100  1m 10 m Pulse Width 100 m 1 10 PW (s) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL 10  Vin 10 V VDD = 300 V Vin Vout 10% 10% 10% 90% td(on) tr 90% td(off) tf Notes: 8. Designed target value on Renesas measurement condition. (Not tested) R07DS1420EJ0102 Rev.1.02 Nov.15.2019 Page 5 of 6 RJK6012DPP-A0 Package Dimensions Package Name JEITA Package Code RENESAS Code Previous Code MASS (Typ) [g] TO-220FPA — PRSS0003AP-A TO-220FPA 1.65 10.0±0.3 2.7±0.2 15.0±0.3 6.9±0.3 3.0±0.3 Unit: mm 1.95±0.3 3.2±0.2 3.2±0.2 0.745±0.2 13.0±0.5 0.395±0.2 1.14±0.2 0.69±0.15 0.60 +0.19 −0.11 2.54±0.25 4.5±0.2 2.54±0.25 © 2017 Renesas Electronics Corporation. All rights reserved. Ordering Information Orderable Part No. RJK6012DPP-A0#T2 R07DS1420EJ0102 Rev.1.02 Nov.15.2019 Quantity 2500 pcs Shipping Container Box (Tube) Page 6 of 6 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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