RJK60S5DPP-E0#T2

Preliminary Datasheet RJK60S5DPP-E0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0641EJ0300 Rev.3.00 Jan 23, 2013 Features  Superjunction MOSFET  Low on-resistance RDS(on) = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  High speed switching tf = 23 ns typ. (at ID = 10 A, VGS = 10 V, RL = 30 , Rg = 10 , Ta = 25C) Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) D 1. Gate 2. Drain 3. Source G 1 S 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Tc = 25C Tc = 100C Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy MOSFET dv/dt ruggedness Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4. Symbol VDSS VGSS IDNote1 IDNote1 ID (pulse)Note1 IDR Note1 IDR (pulse) Note1 Note2 IAP Note2 EAR dv/dt Note3 Pch Note4 ch-c Tch Tstg Ratings 600 +30, 20 20 12.6 40 20 40 Unit V V A A A A A 5 1.36 150 33.7 3.7 150 –55 to +150 A mJ V/ns W C/W C C Limited by Tch max. STch = 25C, Tch  150C Value at Tj = 25C, VDS  480 V Value at Tc = 25C R07DS0641EJ0300 Rev.3.00 Jan 23, 2013 Page 1 of 7 RJK60S5DPP-E0 Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage RDS(on Min 600 — — 3 — — Typ — — — — 0.150 0.375 Max — 1 ±0.1 5 0.178 — Unit V mA A V   Rg — 2.5 —  f = 1 MHz VDS = 25 V, VGS = 0 Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Ciss Coss Crss td(on) tr td(off) tf Qg — — — — — — — — 1600 2160 8.2 23 25 49 23 27 — — — — — — — — pF pF pF ns ns ns ns nC VDS = 25 V VGS = 0 f = 100kHz Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Qgs Qgd VDF trr 10.5 8.5 0.96 400 25 — — 1.60 — — nC nC V ns A 5.6 — C Static drain to source on state resistance Gate resistance Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Body-drain diode reverse recovery current Irr — — — — — Body-drain diode reverse recovery charge Qrr — Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = +30V, 20 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 10 A, VGS = 10 V Note5 Ta = 150°C Note5 ID = 10 A, VGS = 10 V ID = 10 A VGS = 10 V RL = 30  Note5 Rg = 10  VDD = 480 V VGS = 10 V Note4 ID = 20 A IF = 20 A, VGS = 0 Note5 IF = 20 A VGS = 0 Note5 diF/dt = 100 A/s Notes: 5. Pulse test R07DS0641EJ0300 Rev.3.00 Jan 23, 2013 Page 2 of 7 RJK60S5DPP-E0 Preliminary Main Characteristics Channel Dissipation vs. Case Temperature Maximum Safe Operation Area 100 10 100 50 Operation in this area is limited by RDS(on) 1 Tc = 25°C 1 shot 0.1 0 0 25 50 75 1 100 125 150 175 Case Temperature Tc (°C) 30 8V 10 V 15 V 6.5 V 20 6V 10 VGS = 5.5 V 2 4 6 Drain to Source Voltage 8 ID (A) 7V 30 0 Ta = 75°C 25°C −25°C 0.01 4 6 8 10 Gate to Source Voltage VGS (V) R07DS0641EJ0300 Rev.3.00 Jan 23, 2013 8V 7 V 6.5 V 10 V 15 V 6V 15 10 5.5 V 5 VGS = 5 V 0 2 4 6 8 Drain to Source Voltage Drain to Source on State Resistance RDS(on) (Ω) Drain Current ID (A) 10 2 VDS (V) 10 VDS (V) Static Drain to Source on State Resistance vs. Drain Current (Typical) VDS = 10 V Pulse Test 0 1000 20 VDS (V) 100 0.1 Ta = 125°C Pulse Test 25 0 10 Typical Transfer Characteristics 1 100 Typical Output Characteristics Drain Current Drain Current ID (A) Ta = 25°C Pulse Test 10 Drain to Source Voltage Typical Output Characteristics 40 μs Drain Current 0 150 0 μs 10 = ID (A) 10 200 PW Channel Dissipation Pch (W) 250 1 Ta = 125°C 25°C 0.1 VGS = 10 V Pulse Test 0.01 1 10 Drain Current 100 ID (A) Page 3 of 7 Preliminary Body-Drain Diode Reverse Recovery Time (Typical) Static Drain to Source on State Resistance vs. Temperature (Typical) 0.5 VGS = 10 V Pulse Test Reverse Recovery Time trr (ns) Static Drain to Source on State Resistance RDS(on) (Ω) RJK60S5DPP-E0 0.4 ID = 20 A 0.3 0.2 5A 10 A 0.1 0 −25 1000 100 di/dt = 100 A/μs VGS = 0, Ta = 25°C 10 0 25 50 75 1 100 125 150 Case Temperature 10 Reverse Drain Current IDR (A) Tc (°C) Typical Capacitance vs. Drain to Source Voltage 100000 VGS = 0 f = 100 kHz COSS Stored Energy (Typical) 4 Ta = 25°C Ciss 3 1000 100 EOSS (μJ) Capacitance C (pF) 10000 100 Coss 10 Crss 2 1 1 0.1 0 0 50 100 150 200 250 Drain to Source Voltage 0 300 VDS (V) 200 0 0 ID = 20 A Ta = 25°C 20 60 40 Gate Charge R07DS0641EJ0300 Rev.3.00 Jan 23, 2013 8 4 VDD = 480 V 300 V 100 V Qg (nC) 200 0 80 250 300 VDS (V) IDR (A) 100 Reverse Drain Current 400 VGS (V) 12 VDD = 480 V 300 V 100 V VDS 150 Reverse Drain Current vs. Source to Drain Voltage (Typical) Gate to Source Voltage VDS (V) Drain to Source Voltage 16 VGS 600 100 Drain to Source Voltage Dynamic Input Characteristics (Typical) 800 50 Ta = 125°C 10 25°C 1 VGS = 0 Pulse Test 0.1 0 0.4 0.8 Source to Drain Voltage 1.2 1.6 VSD (V) Page 4 of 7 RJK60S5DPP-E0 Preliminary Gate to Source Cutoff Voltage vs. Case Temperature (Typical) Drain to Source Breakdown Voltage vs. Case Temperature (Typical) 5 ID = 10 mA 4 3 1 mA 0.1 mA 2 1 VDS = 10 V 0 −25 0 25 50 75 Case Temperature 800 Drain to Source Breakdown Voltage V(BR)DSS (V) Gate to Source Cutoff Voltage VGS(off) (V) 6 700 600 500 ID = 10 mA VGS = 0 400 −25 100 125 150 0 Tc (°C) 25 50 75 Case Temperature 100 125 150 Tc (°C) Repetitive Avalanche Energy EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating 1.6 VDD = 50 V Rg ≥ 100 Ω 1.2 0.8 0.4 0 25 50 75 100 Channel Temperature 125 150 Tch (°C) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 1 D=1 0.5 0.2 0.1 0.01 0.05 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 3.7°C/W 0.02 0.01 0.01 1 0.001 10 μ t sho pul PDM se PW T PW T 100 μ 1m 10 m Pulse Width R07DS0641EJ0300 Rev.3.00 Jan 23, 2013 D= 100 m 1 10 100 PW (s) Page 5 of 7 RJK60S5DPP-E0 Preliminary Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin 10 Ω 10% 10% Vout 10% VDD = 300 V Vin 10 V 90% td(on) tr Avalanche Test Circuit VDS Monitor 90% tf td(off) Avalanche Waveform EAR = L 1 2 L • IAP2 • VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg D. U. T VDS VDD ID 100 Ω Vin 0 R07DS0641EJ0300 Rev.3.00 Jan 23, 2013 VDD Page 6 of 7 RJK60S5DPP-E0 Preliminary Package Dimension Package Name TO-220FP JEITA Package Code ⎯ RENESAS Code PRSS0003AG-A Previous Code ⎯ MASS[Typ.] 1.9g 10.16 ± 0.20 2.54 ± 0.20 6.68 ± 0.20 3.3 ± 0.2 1.28 ± 0.30 3.18 ± 0.20 15.87 ± 0.20 φ 3.18 ± 0.10 12.98 ± 0.30 Unit: mm Max 1.47 2.76 ± 0.20 0.80 ± 0.20 0.50 4.7 ± 0.2 5.08 ± 0.20 Ordering Information Orderable Part Number RJK60S5DPP-E0#T2 R07DS0641EJ0300 Rev.3.00 Jan 23, 2013 Quantity 50 pcs Shipping Container Tube Page 7 of 7 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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