RJK60S7DPP-E0#T2

Preliminary Datasheet RJK60S7DPK-M0 600V - 30A - SJ MOS FET High Speed Power Switching R07DS0642EJ0300 Rev.3.00 Dec 10, 2012 Features  Superjunction MOSFET  Low on-resistance RDS(on) = 0.1  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)  High speed switching tf = 9 ns typ. (at ID = 15 A, VGS = 10 V, RL = 20 , Rg = 10 , Ta = 25C) Outline RENESAS Package code: PRSS0004ZH-A (Package name:TO-3PSG) D 4 1. Gate 2. Drain 3. Source 4. Drain G 1 2 S 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Tc = 25C Tc = 100C Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID Note1 ID Note1 ID (pulse)Note1 IDR Note1 IDR (pulse) Note1 IAPNote2 Note2 EAR Pch Note3 ch-c Tch Tstg Ratings 600 +30, 20 30 19 60 30 60 7.5 Unit V V A A A A A A 3.06 227.2 0.55 150 –55 to +150 mJ W C/W C C Notes: 1. Limited by Tch max. 2. STch = 25C, Tch  150C 3. Value at Tc = 25C R07DS0642EJ0300 Rev.3.00 Dec 10, 2012 Page 1 of 7 RJK60S7DPK-M0 Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage RDS(on) Min 600 — — 3 — — Typ — — — — 0.100 0.25 Max — 1 ±0.1 5 0.125 — Unit V mA A V   Rg — 2.0 —  f = 1 MHz VDS = 25 V, VGS = 0 Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Ciss Coss Crss td(on) tr td(off) tf Qg — — — — — — — — 2300 3000 10 27 28 55 9 39 — — — — — — — — pF pF pF ns ns ns ns nC VDS = 25 V VGS = 0 f = 100 kHz Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Qgs Qgd VDF trr 15 11 1.0 490 26 — — 1.6 — — nC nC V ns A 7.1 — C Static drain to source on state resistance Gate resistance Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Body-drain diode reverse recovery current Irr — — — — — Body-drain diode reverse recovery charge Qrr — Notes: 4 Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = +30V, 20 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 15 A, VGS = 10 V Note4 Ta = 150°C Note4 ID = 15 A, VGS = 10 V ID = 15 A VGS = 10 V RL = 20  Note4 Rg = 10  VDD = 480 V VGS = 10 V Note4 ID = 30 A IF = 30 A, VGS = 0 Note4 IF = 30 A VGS = 0 Note4 diF/dt = 100 A/s Pulse test R07DS0642EJ0300 Rev.3.00 Dec 10, 2012 Page 2 of 7 RJK60S7DPK-M0 Preliminary Main Characteristics Channel Dissipation vs. Case Temperature Maximum Safe Operation Area 100 10 ID (A) Drain Current μs 50 10 0 100 10 150 = 200 Operation in this area is limited by RDS(on) 1 Tc = 25°C 1 shot 0.1 0 0 25 50 75 1 100 125 150 175 Case Temperature Tc (°C) 7V 8V 40 6.5 V 30 6V 20 VGS = 5.5 V 10 0 0 2 4 5 8 Drain Current ID (A) Drain Current ID (A) 40 10 V 15 V 100 1000 VDS (V) Typical Output Characteristics Ta = 25°C Pulse Test 50 10 Drain to Source Voltage Typical Output Characteristics 60 μs 250 PW Channel Dissipation Pch (W) 300 8V 7V 10 V 15 V 30 6.5 V 6V 20 10 VGS = 5.5 V 0 10 Ta = 125°C Pulse Test 0 Drain to Source Voltage VDS (V) 2 4 5 8 10 Drain to Source Voltage VDS (V) Static Drain to Source on State Resistance vs. Drain Current (Typical) Drain to Source on State Resistance RDS(on) (Ω) 100 Drain Current ID (A) VDS = 10 V Pulse Test 10 Tc = 75°C 1 25°C −25°C 0.1 0.01 0 2 4 6 8 10 Gate to Source Voltage VGS (V) R07DS0642EJ0300 Rev.3.00 Dec 10, 2012 1 Ta = 125°C 25°C 0.1 VGS = 10 V Pulse Test 0.01 1 10 100 Drain Current ID (A) Page 3 of 7 Body-Drain Diode Reverse Recovery Time (Typical) Static Drain to Source on State Resistance vs. Temperature (Typical) Reverse Recovery Time trr (ns) 0.4 VGS = 10 V Pulse Test 0.3 ID = 30 A 0.2 10 A 15 A 0.1 0 −25 1000 100 di/dt = 100 A/μs VGS = 0, Ta = 25°C 10 0 25 50 75 1 100 125 150 10 Case Temperature Tc (°C) Reverse Drain Current IDR (A) Typical Capacitance vs. Drain to Source Voltage COSS Stored Energy (Typical) VGS = 0 f = 100 kHz 10000 Ta = 25°C 5 Ciss 1000 Coss 100 10 4 3 2 Crss 1 1 0.1 0 0 50 100 150 200 Drain to Source Voltage 250 0 300 VDS (V) 600 12 VDD = 480 V 300 V 100 V VDS 400 200 0 0 8 4 VDD = 480 V 300 V 100 V 20 40 Gate Charge R07DS0642EJ0300 Rev.3.00 Dec 10, 2012 0 60 Qg (nC) 150 200 80 250 300 VDS (V) 100 Reverse Drain Current IDR (A) VGS VGS (V) 16 ID = 30 A Ta = 25°C 100 Reverse Drain Current vs. Source to Drain Voltage (Typical) Gate to Source Voltage VDS (V) 800 50 Drain to Source Voltage Dynamic Input Characteristics (Typical) Drain to Source Voltage 100 6 100000 Capacitance C (pF) Preliminary EOSS (μJ) Static Drain to Source on State Resistance RDS(on) (Ω) RJK60S7DPK-M0 Ta = 125°C 25°C 10 1 VGS = 0 Pulse Test 0.1 0 0.4 0.8 1.2 1.6 Source to Drain Voltage VSD (V) Page 4 of 7 Preliminary Gate to Source Cutoff Voltage vs. Case Temperature (Typical) Drain to Source Breakdown Voltage vs. Case Temperature (Typical) Drain to Source Breakdown Voltage V(BR)DSS (V) Gate to Source Cutoff Voltage VGS(off) (V) RJK60S7DPK-M0 6 5 ID = 10 mA 4 3 1 mA 0.1 mA 2 1 VDS = 10 V 0 −25 0 25 50 75 Case Temperature 800 700 600 500 ID = 10 mA VGS = 0 400 −25 100 125 150 Tc (°C) 0 25 50 75 Case Temperature 100 125 150 Tc (°C) Repetitive Avalanche Energy EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating 4 VDD = 50 V Rg ≥ 100 Ω 3 2 1 0 25 50 75 100 Channel Temperature 125 150 Tch (°C) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 1 D=1 0.5 0.2 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 0.55°C/W 0.1 0.1 0.05 2 0.0 PDM D= PW T 0.01 1 shot pulse 0.01 10 μ 100 μ 1m 10 m Pulse Width R07DS0642EJ0300 Rev.3.00 Dec 10, 2012 PW T 100 m 1 10 100 PW (s) Page 5 of 7 RJK60S7DPK-M0 Preliminary Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin 10 Ω 10% 10% Vout 10% VDD = 300 V Vin 10 V 90% td(on) tr Avalanche Test Circuit VDS Monitor 90% tf td(off) Avalanche Waveform EAR = L 1 2 L • IAP2 • VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg D. U. T VDS VDD ID 100 Ω Vin 0 R07DS0642EJ0300 Rev.3.00 Dec 10, 2012 VDD Page 6 of 7 RJK60S7DPK-M0 Preliminary JEITA Package Code ⎯ RENESAS Code PRSS0004ZH-A Previous Code TO-3PSG/TO-3PSGV 15.60 ± 0.2 13.60 MASS[Typ.] 3.7g Unit: mm 4.80 ± 0.2 0.60 ± 0.2 φ3.2 ± 0.2 20.0 ± 0.2 2.0 2.4 0.50typ 18.70 ± 0.2 1.0 3.50 14.90 ± 0.1 3.8 Package Name TO-3PSG 5.00 ± 0.3 Package Dimension 1.40 3-1.00 ± 0.2 5.45 ± 0.5 5.45 ± 0.5 0.60 ± 0.1 1.50 ± 0.2 2.825 ± 0.15 Ordering Information Orderable Part Number RJK60S7DPK-M0#T0 R07DS0642EJ0300 Rev.3.00 Dec 10, 2012 Quantity 360 pcs Shipping Container Box (Tube) Page 7 of 7 Notice 1. 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