RJL6012DPE-00#J3

Preliminary Datasheet RJL6012DPE R07DS0814EJ0200 (Previous: REJ03G1750-0100) Rev.2.00 Jun 21, 2012 600V - 10A - MOS FET High Speed Power Switching Features  Built-in fast recovery diode  Low on-resistance RDS(on) = 0.88  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1 1. Gate 2. Drain 3. Source 4. Drain G 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Note2 Pch ch-c Tch Tstg Ratings 600 30 10 30 10 30 3 0.49 100 1.25 150 –55 to +150 Unit V V A A A A A mJ W C/W C C Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tc = 25C 3. STch = 25C, Tch  150C R07DS0814EJ0200 Rev.2.00 Jun 21, 2012 Page 1 of 6 RJL6012DPE Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Min 600 — — 2.0 — Typ — — — — 0.88 Max — 10 0.1 4.0 1.10 Unit V A A V  Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF — — — — — — — — — — — 1050 105 12 27 20 78 16 28 4.8 14.2 1.0 — — — — — — — — — — 1.7 pF pF pF ns ns ns ns nC nC nC V trr — 150 — ns Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 5 A, VGS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz ID = 5 A VGS = 10 V RL = 60  Rg = 10  VDD = 480 V VGS = 10 V ID = 10 A IF = 10 A, VGS = 0 Note4 IF = 10 A, VGS = 0 diF/dt = 100 A/s Notes: 4. Pulse test R07DS0814EJ0200 Rev.2.00 Jun 21, 2012 Page 2 of 6 RJL6012DPE Preliminary Main Characteristics Typical Output Characteristics Maximum Safe Operation Area 100 20 10 Drain Current ID (A) =1 00 μs 1 0.1 Operation in this area is limited by RDS(on) 0.01 Ta = 25°C 1 shot 0.001 0.1 1 10 100 5.2 V 10 V 6V 12 5V 8 4.8 V 4.6 V 4 VGS = 4.4 V 0 4 8 12 20 16 Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V) Typical Transfer Characteristics Static Drain to Source on State Resistance vs. Drain Current (Typical) Drain to Source on State Resistance RDS(on) (Ω) VDS = 10 V Pulse Test 10 Tc = 75°C 25°C 1 −25°C 0.1 0.01 0 2 4 6 10 Pulse Test VGS = 10 V Ta = 25°C 1 0.1 8 1 10 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Resistance vs. Temperature (Typical) Body-Drain Diode Reverse Recovery Time (Typical) 2.5 2.0 ID = 10 A 1.5 5A 3A 1.0 0.5 0 -25 Reverse Recovery Time trr (ns) Drain Current ID (A) 16 0 1000 100 Static Drain to Source on State Resistance RDS(on) (Ω) Ta = 25°C Pulse Test μs PW Drain Current ID (A) 10 100 1000 100 di / dt = 100 A / μs VGS = 0, Ta = 25°C 10 0 25 50 75 100 125 150 Case Temperature Tc (°C) R07DS0814EJ0200 Rev.2.00 Jun 21, 2012 1 10 100 Reverse Drain Current IDR (A) Page 3 of 6 RJL6012DPE Preliminary Typical Capacitance vs. Drain to Source Voltage (Typical) Coss 10 1 0 Crss VGS = 0 f = 1 MHz Ta = 25°C 100 200 300 Reverse Drain Current IDR (A) 12 300 V VDS 480 V 400 8 200 4 VDD = 480 V 300 V 100 V 8 0 16 24 0 32 Reverse Drain Current vs. Source to Drain Voltage (Typical) Gate to Source Cutoff Voltage vs. Case Temperature (Typical) VGS = 0 Ta = 25 °C Pulse Test 8 4 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) R07DS0814EJ0200 Rev.2.00 Jun 21, 2012 16 VDD = 100 V 600 Gate Charge Qg (nC) 12 0 VGS ID = 10 A Ta = 25 °C Drain to Source Voltage VDS (V) 20 16 800 5 Gate to Source Voltage VGS (V) 100 Drain to Source Voltage VDS (V) Ciss 1000 Gate to Source Cutoff Voltage VGS(off) (V) Capacitance C (pF) 10000 Dynamic Input Characteristics (Typical) 40 VDS = 10 V 4 3 2 ID = 10 mA 1 mA 0.1 mA 1 0 -25 0 25 50 75 Case Temperature 100 125 150 Tc (°C) Page 4 of 6 RJL6012DPE Preliminary 3 γ s (t) Normalized Transient Thermal Impedance Normalized Transient Thermal Impedance vs. Pulse Width Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.03 0.1 θch – c(t) = γs (t) • θch – c 0.05 θch – c = 1.25°C/ W, Tc = 25°C PDM 0.02 e 1 0.0 uls tp o h 1s 0.01 10 μ D= PW T PW T 100 μ 1m 10 m 100 m 1 10 Pulse Width PW (s) Switching Time Test Circuit Waveform D.U.T. RL 10 Ω Vin 10 V 90% Vout Monitor Vin Monitor Vin Vout VDD = 300 V 10% 10% 90% td(on) R07DS0814EJ0200 Rev.2.00 Jun 21, 2012 10% tr 90% td(off) tf Page 5 of 6 RJL6012DPE Preliminary Package Dimensions JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g 7.8 6.6 (1.5) 10.0 2.49 ± 0.2 0.2 0.1 +– 0.1 7.8 7.0 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 Unit: mm 1.7 Package Name LDPAK(S)-(1) 2.2 1.37 ± 0.2 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.4 ± 0.1 0.3 3.0 +– 0.5 1.3 ± 0.2 Ordering Information Orderable Part Number RJL6012DPE-00#J3 R07DS0814EJ0200 Rev.2.00 Jun 21, 2012 Quantity 1000 pcs Shipping Container Taping Page 6 of 6 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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