RJP4301APP

RJP4301APP Nch IGBT for Strobe Flash REJ03G1709-0300 Rev.3.00 Oct 14, 2009 Features • VCES : 430 V • TO-220FN package • High Speed Switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) 2 1 1 : Gate 2 : Collector 3 : Emitter 1 23 3 Applications Strobe flash Maximum Ratings (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Symbol VCES VGES Ratings 430 ±33 Unit V V Conditions VGE = 0 V VCE = 0 V, Refer to item 4 under Notes on the Actual Specifications CM = 1500 μF (see performance curve) Collector current (Pulse) Maximum power dissipation Junction temperature Storage temperature Mass ICM PC Tj Tstg — 200 30 – 40 to +150 – 40 to +150 2.0 A W °C °C g Typical value REJ03G1709-0300 Rev.3.00 Oct 14, 2009 Page 1 of 4 RJP4301APP Electrical Characteristics (Tj = 25°C) Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol V(BR)CES ICES IGES VGE(th) VCE(sat) Cies Coes Cres td(on) tr td(off) tf Min. 430 — — 3.0 — — — — — — — — Typ. — — — — 4.0 1150 125 14 0.01 0.06 0.15 0.2 Max. — 1 ±0.1 5.5 10 — — — — — — — Unit V μA μA V V pF pF pF μs μs μs μs Test conditions IC = 100 μA, VGE = 0 V VCE = 430 V, VGE = 0 V VGE = ±33 V, VCE = 0 V VCE = 10 V, IC = 1 mA IC = 200 A, VGE = 26 V VCE = 25 V VGS = 0 f = 1 MHz ID = 200 A VGS = 26 V VCC = 300 V RG = 25 Ω Performance Curves Maximum Pulse Collector Current 240 Pulse Collector Current ICP (A) CM = 1500 μF Tc ≤ 70°C 200 R = 30 Ω G 160 120 80 40 0 0 10 20 30 40 Gate-Emitter Voltage VGE (V) REJ03G1709-0300 Rev.3.00 Oct 14, 2009 Page 2 of 4 RJP4301APP Application Example IXe CM + – Vtrig Trigger Signal VCM Vtrig RG VCE VG IGBT IGBT Gate Voltage VG Xe Tube Current IXe Recommended Operation Conditions 300 V 180 A 1200 μF 28 V Maximum Operation Conditions 350 V 200 A 1500 μF 26 V VCM ICP CM VGE Precautions on Usage 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And peak reverse gate current during turn-off must become less than 1 A. (In general, when RG(off) = 30 Ω, it is satisfied.) 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the device from electrostatic charge. 3. The operation life should be endured until repeated discharge of 5,000 times under the charge current (IXe ≤ 200 A : full luminescence condition) of main capacitor. Repetition period under full luminescence condition is over 3 seconds. 4. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours. REJ03G1709-0300 Rev.3.00 Oct 14, 2009 Page 3 of 4 RJP4301APP Package Dimensions Package Name TO-220FN JEITA Package Code ⎯ RENESAS Code PRSS0003AB-A Previous Code ⎯ MASS[Typ.] 2.0g Unit: mm 10 ± 0.3 2.8 ± 0.2 15 ± 0.3 φ3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 Ordering Information Part No. RJP4301APP-00-T2 Quantity 50 pcs Magazine (Tube) Shipping Container REJ03G1709-0300 Rev.3.00 Oct 14, 2009 Page 4 of 4 2.6 ± 0.2 4.5 ± 0.2 6.5 ± 0.3 3 ± 0.3 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. 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