RJP60F0DPE-00#J3

Preliminary Datasheet RJH60M3DPE 600V - 17A - IGBT Application: Inverter R07DS0533EJ0300 Rev.3.00 May 25, 2012 Features  Short circuit withstand time (8 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (90 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 70 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 17 A, Rg = 5 , Ta = 25°C) Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) C 4 1. Gate 2. Collector 3. Emitter 4. Collector G 1 2 3 E Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature Symbol VCES / VR VGES IC IC ic(peak) Note1 iDF iDF(peak) Note1 PC Note2 j-c Note2 j-cd Note2 Tj Tstg Ratings 600 ±30 35 17 50 17 50 113 1.11 2.8 150 –55 to +150 Unit V V A A A A A W °C/ W °C/ W °C °C Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tc = 25C R07DS0533EJ0300 Rev.3.00 May 25, 2012 Page 1 of 9 RJH60M3DPE Preliminary Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Short circuit withstand time FRD Forward voltage FRD reverse recovery time FRD reverse recovery charge FRD peak reverse recovery current Symbol V(BR)CES ICES / IR Min 600 — Typ — — Max — 5 Unit V A Test Conditions Iy = 10 A, VGE = 0 VCE = 600 V, VGE = 0 IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Etotal tsc — 5 — — — — — — — — — — — — — — — 6 — — 1.8 2.2 900 60 30 60 9 35 38 20 90 70 0.29 0.29 0.58 8 ±1 7 2.3 — — — — — — — — — — — — — — — A V V V pF pF pF nC nC nC ns ns ns ns mJ mJ mJ s VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 17 A, VGE = 15 V Note3 IC = 35 A, VGE = 15 V Note3 VF trr Qrr Irr — — — — 1.3 90 0.15 4.5 1.7 — — — V ns C A IF = 17 A Note3 VCE = 25 V VGE = 0 f = 1 MHz VGE = 15 V VCE = 300 V IC = 17 A VCC = 300 V VGE = 15 V IC = 17 A Rg = 5  Inductive load Tc = 100 C VCC  360 V, VGE = 15 V IF = 17 A diF/dt = 100 A/s Notes: 3. Pulse test. R07DS0533EJ0300 Rev.3.00 May 25, 2012 Page 2 of 9 RJH60M3DPE Preliminary Main Characteristics Collector Dissipation vs. Case Temperature Maximum DC Collector Current vs. Case Temperature 40 100 Collector Current IC (A) Collector Dissipation Pc (W) 120 80 60 40 20 0 25 50 75 10 0 100 125 150 175 50 75 100 125 150 175 Case Temperature Tc (°C) Maximum Safe Operation Area Turn-off SOA 10 10 0 80 = μs 10 Collector Current IC (A) PW μs 1 0.1 0.01 1 25 Case Temperature Tc (°C) 100 60 40 20 Tc = 25°C Single pulse 0 10 0 1000 100 200 400 600 800 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Output Characteristics Typical Output Characteristics 50 50 Pulse Test Ta = 25°C 13 V 40 14 V 15 V 30 10 V 20 Pulse Test Ta = 150°C 12 V Collector Current IC (A) Collector Current IC (A) 20 0 0 Collector Current IC (A) 30 10 40 13 V 14 V 12 V 15 V 30 20 10 V 10 VGE = 8 V VGE = 8 V 0 0 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) R07DS0533EJ0300 Rev.3.00 May 25, 2012 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Page 3 of 9 RJH60M3DPE Preliminary Collector to Emitter Saturation Voltage VCE(sat) (V) 5 Tc = 25°C Pulse Test 4 3 IC = 35 A 2 17 A 1 8 10 12 14 16 18 5 Tc = 150°C Pulse Test 4 3 IC = 35 A 2 17 A 1 20 8 14 16 18 20 Typical Transfer Characteristics Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) Tc = 150°C 25°C 30 20 10 VCE = 10 V Pulse Test 0 0 4 8 12 16 4 VGE = 15 V Pulse Test 3 IC = 35 A 17 A 2 3A 1 0 −25 0 25 50 75 100 125 150 Case Temparature Tc (°C) Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical) Frequency Characteristics (Typical) 16 10 Collector Current IC(RMS) (A) Gate to Emitter Cutoff Voltage VGE(off) (V) 12 Gate to Emitter Voltage VGE (V) 40 8 IC = 10 mA 6 1 mA 4 2 VCE = 10 V Pulse Test 0 −25 10 Gate to Emitter Voltage VGE (V) 50 Collector Current IC (A) Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) 0 12 Collector current wave (Square wave) 8 4 Tj = 125°C, Tc = 90°C VCE = 400 V, VGE = 15 V Rg = 5 Ω, duty = 50% 0 0 25 50 75 100 125 150 Junction Temparature Tj (°C) R07DS0533EJ0300 Rev.3.00 May 25, 2012 1 10 100 1000 Frequency f (kHz) Page 4 of 9 RJH60M3DPE Preliminary Switching Characteristics (Typical) (1) Switching Characteristics (Typical) (2) 10 Swithing Energy Losses E (mJ) Switching Times t (ns) 1000 tf td(off) 100 td(on) 10 tr VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 1 1 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 1 Eoff Eon 0.1 10 1 100 Collector Current IC (A) (Inductive load) Collector Current IC (A) (Inductive load) Switching Characteristics (Typical) (4) Switching Characteristics (Typical) (3) Swithing Energy Losses E (mJ) Switching Time t (ns) 1000 VCC = 300 V, VGE = 15 V IC = 17 A, Tc = 150°C tf td(off) 100 td(on) tr 10 10 VCC = 300 V, VGE = 15 V IC = 17 A, Tc = 150°C 1 Eoff Eon 0.1 1 10 1 100 1000 Swithing Energy Losses E (mJ) VCC = 300 V, VGE = 15 V IC = 17 A, Rg = 5 Ω td(off) tf td(on) tr 10 25 50 75 100 125 150 Channel Temperature Tc (°C) (Inductive load) R07DS0533EJ0300 Rev.3.00 May 25, 2012 100 Switching Characteristics (Typical) (6) Switching Characteristics (Typical) (5) 100 10 Gate Registance Rg (Ω) (Inductive load) Gate Resistance Rg (Ω) (Inductive load) Switching Times t (ns) 100 10 10 VCC = 300 V, VGE = 15 V IC = 17 A, Rg = 5 Ω 1 Eoff Eon 0.1 25 50 75 100 125 150 Channel Temperature Tc (°C) (Inductive load) Page 5 of 9 RJH60M3DPE Preliminary Typical Capacitance vs. Collector to Emitter Voltage Cies 1000 100 Coes 10 VGE = 0 V f = 1 MHz Tc = 25°C Cres 1 0 50 100 150 200 250 800 600 12 400 8 VCE 200 0 10 Reverse Recovery Charge Qrr (μC) Reverse Recovery Time trr (ns) 160 Tc = 150°C 120 80 25°C 40 VCC = 300 V IF = 17 A 80 120 160 40 50 60 0 70 0.5 VCC = 300 V IF = 17 A 0.4 Tc = 150°C 0.3 0.2 25°C 0.1 0 200 0 40 80 120 160 200 Diode Current Slope di/dt (A/μs) Diode Current Slope di/dt (A/μs) Reverse Recovery Current vs. Diode Current Slope (Typical) Forward Current vs. Forward Voltage (Typical) 16 50 VCC = 300 V IF = 17 A Forward Current IF (A) Reverse Recovery Current Irr (A) 30 Reverse Recovery Charge vs. Diode Current Slope (Typical) 200 40 20 Gate Charge Qg (nc) Reverse Recovery Time vs. Diode Current Slope (Typical) 0 VCC = 300 V 4 IC = 17 A Tc = 25°C 0 300 Collector to Emitter Voltage VCE (V) 0 16 VGE Gate to Emitter Voltage VGE (V) Capacitance C (pF) 1000 Collector to Emitter Voltage VCE (V) Dynamic Input Characteristics (Typical) 12 8 Tc = 150°C 4 25°C 0 0 40 80 120 160 200 Diode Current Slope di/dt (A/μs) R07DS0533EJ0300 Rev.3.00 May 25, 2012 Tc = 150°C 40 25°C 30 20 10 VGE = 0 V Pulse Test 0 0 0.4 0.8 1.2 1.6 2.0 2.4 C-E Diode Forward Voltage VCEF (V) Page 6 of 9 Preliminary Normalized Transient Thermal Impedance γs (t) RJH60M3DPE Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 Tc = 25°C D=1 1 0.5 0.2 0.1 θj – c(t) = γs (t) • θj – c θj – c = 1.11°C/W, Tc = 25°C .05 0 0.1 0.02 0.01 1 shot pulse PDM D= PW T PW T 0.01 100 μ 1m 10 m 100 m Pulse Width 1 10 100 PW (s) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 10 Tc = 25°C 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 1 shot pulse 0.01 100 μ R07DS0533EJ0300 Rev.3.00 May 25, 2012 θj – c(t) = γs (t) • θj – c θj – c = 2.8°C/W, Tc = 25°C 1m PDM D= PW T PW T 10 m 100 m Pulse Width 1 10 100 PW (s) Page 7 of 9 RJH60M3DPE Preliminary Switching Time Test Circuit Waveform 90% VGE Diode clamp 10% L IC D.U.T 90% VCC 90% Rg 10% 10% td(off) Diode Reverse Recovery Time Test Circuit tf td(on) tr Waveform VCC IF D.U.T IF diF/dt L trr 0 Irr Rg R07DS0533EJ0300 Rev.3.00 May 25, 2012 0.5 Irr 0.9 Irr Page 8 of 9 RJH60M3DPE Preliminary Package Dimension JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g 7.8 6.6 (1.5) 10.0 2.49 ± 0.2 0.2 0.1 +– 0.1 7.8 7.0 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 Unit: mm 1.7 Package Name LDPAK(S)-(1) 2.2 1.37 ± 0.2 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.4 ± 0.1 0.3 3.0 +– 0.5 1.3 ± 0.2 Ordering Information Orderable Part Number RJH60M3DPE-00#J3 R07DS0533EJ0300 Rev.3.00 May 25, 2012 Quantity 1000 pcs Shipping Container Taping Page 9 of 9 Notice 1. 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