RJP65T43DPM-00#T1

Datasheet RJP65T43DPM R07DS1201EJ0200 Rev.2.00 Dec.01.2020 650V - 20A - IGBT High Speed Switching Features      Trench gate and thin wafer technology (G7H series)  Isolated package  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25 C)  High speed switching tf = 28 ns typ. (at VCC = 400 V, VGE = 15 V, IC = 20 A, Rg = 10 , Ta = 25 C) Operation frequency (20 kHz ≤ f ≤ 100kHz) Not guarantee short circuit withstand time Applications: PFC Quality grade: Standard Key Performance Type RJP65T43DPM VCES IC VCE(sat), TC=25°C Tj 650 V 20 A 1.8 V 175 C Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C 1. Gate 2. Collector 3. Emitter G E 1 R07DS1201EJ0200 Rev.2.00 Dec.01.2020 2 3 Page 1 of 8 RJP65T43DPM Absolute Maximum Ratings (Tc = 25 C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 C Tc = 100 C Collector peak current Collector dissipation Junction temperature Storage temperature Note: Symbol VCES VGES IC Notes1 IC Notes1 ic(peak) Notes1 PC Tj Notes2 Tstg Ratings 650 30 40 20 150 68.8 175 –55 to +150 Unit V V A A A W °C °C Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect a reliability even if it is within the absolute maximum ratings. Please consider derating condition for appropriate reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage of Semiconductor Devices) and individual reliability data . Notes: 1. Pulse width limited by safe operating area. 2. Please use this device in the thermal conditions which the junction temperature does not exceed 175 C. Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175 C. Thermal Resistance Characteristics (Tc = 25 C) Item Junction to case thermal resistance Symbol Rth(j-c) Max. Value Notes3 2.18 Unit CW Notes: 3. Designed target value on Renesas measurement condition. (Not tested) R07DS1201EJ0200 Rev.2.00 Dec.01.2020 Page 2 of 8 RJP65T43DPM Electrical Characteristics (Tc = 25 C) Item Collector to emitter leakage current Gate to emitter leakage current Gate to emitter threshold voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on loss energy Turn-off loss energy Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time Turn-on loss energy Turn-off loss energy Total switching energy Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal Min   4.0  — — — — — —  — — — — — —  — — — — — — Typ    1.8 1320 37 26 70 8 31 30 20 107 28 0.17 0.11 0.28 31 20 114 51 0.25 0.24 0.49 Max 1 ±1 7.0 2.4 — — — — — —  — — — — — —  — — — — — — Unit A A V V pF pF pF nC nC nC Ns ns ns ns mJ mJ mJ Ns ns ns ns mJ mJ mJ Test Conditions VCE = 650 V, VGE = 0 V VGE = ±30 V, VCE = 0 V VCE = 10V, IC = 0.67 mA IC = 20 A, VGE = 15V Notes4 VCE = 25 V VGE = 0 V f = 1 MHz VGE = 15 V VCE = 400 V IC = 20 A VCC = 400 V VGE = 15 V IC = 20 A Rg = 10  TC = 25 °C Inductive load VCC = 400 V VGE = 15 V IC = 20 A Rg = 10  TC = 150 °C Inductive load Notes5 Notes5 Notes: 4. Pulse test 5. Switching time test circuit and waveform are shown below. R07DS1201EJ0200 Rev.2.00 Dec.01.2020 Page 3 of 8 RJP65T43DPM Main Characteristics Collector Dissipation vs. Case Temperature Maximum DC Collector Current vs. Case Temperature 60 Collector Current IC (A) Collector Dissipation Pc (W) 80 60 40 20 0 25 50 75 30 20 10 100 125 150 175 0 25 50 75 100 125 150 175 Case Temperature Tc (C) Case Temperature Tc (C) Forward Bias Safe Operation Area Typical Transfer Characteristics 160 PW 100 0 s 10 10 =1 Collector Current IC (A) 1000 0 s 1 0.1 Tc = 25 C Single pulse Notes6 0.01 1 10 120 150 C Tc = 25 C 80 40 VCE = 10 V Pulse Test 0 100 0 1000 4 8 12 16 Collector to Emitter Voltage VCE (V) Gate to Emitter Voltage VGE (V) Typical Output Characteristics Typical Output Characteristics 160 Pulse Test Tc = 25 C 160 10 V 9.5 V 11 V 120 15 V 9.0 V 80 8.5 V 8.0 V 40 0 VGE = 7.5 V 0 2 4 6 8 10 Collector to Emitter Voltage VCE (V) Collector Current IC (A) Collector Current IC (A) 40 0 0 Collector Current IC (A) 50 Pulse Test Tc = 150 C V 10 9.5 V 11 V 120 15 V 9.0 V 8.5 V 80 8.0 V 40 0 7.5 V VGE = 7.0 V 0 2 4 6 8 10 Collector to Emitter Voltage VCE (V) Notes: 6. Designed target value on Renesas measurement condition. (Not tested) Renesas recommends that operating conditions are designed according to a document “Power MOS FET・ IGBT Attention of Handling Semiconductor Devices”. R07DS1201EJ0200 Rev.2.00 Dec.01.2020 Page 4 of 8 RJP65T43DPM Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) 5 IC = 40 A 20 A 10 A 4 3 2 1 4 8 12 16 20 Tc = 150 C Pulse Test 5 IC = 40 A 20 A 10 A 4 3 2 1 4 8 12 20 Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage vs. Case Temperature (Typical) Gate to Emitter Cutoff Voltage vs. Case Temperature (Typical) 3.5 Gate to Emitter Threshold Voltage VGE(th) (V) Gate to Emitter Voltage VGE (V) VGE = 15 V Pulse Test 3.0 IC = 40 A 2.5 20 A 2.0 10 A 1.5 1.0 0.5 25 0 25 50 75 100 125 150 IC = 0.67 mA 4 2 VCE = 10 V Pulse test 0 25 0 25 50 75 100 125 150 Dynamic Input Characteristics (Typical) 100 Coes VGE = 0 V f = 1 MHz Tc = 25 C 0 6 Typical Capacitance vs. Collector to Emitter Voltage Cies 1 8 Case Temperature Tc (C) 1000 10 10 Case Temperature Tc (C) 10000 Capacitance C (pF) 6 50 100 Cres 150 200 250 300 Collector to Emitter Voltage VCE (V) R07DS1201EJ0200 Rev.2.00 Dec.01.2020 800 16 VCC = 400 V IC = 20 A Tc = 25 C 600 VGE 12 400 8 200 4 VCE 0 0 20 40 60 80 0 100 Gate to Emitter Voltage VGE (V) Tc = 25 C Pulse Test Collector to Emitter Saturation Voltage VCE(sat) (V) 6 Collector to Emitter Voltage VCE (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) Gate Charge Qg (nC) Page 5 of 8 RJP65T43DPM Switching Times t (ns) 1000 VCC = 400 V, VGE = 15 V Rg = 10 , Tc = 150 C td(off) 100 tf td(on) 10 tr 1 1 10 Switching Characteristics (Typical) (2) Switching Energy Losses E (mJ) Switching Characteristics (Typical) (1) 100 10 VCC = 400 V, VGE = 15 V Rg = 10 , Tc = 150 C 1 Eon 0.1 Eoff 0.01 1 Switching Characteristics (Typical) (4) Switching Characteristics (Typical) (3) tf td(on) 10 1 tr 1 10 100 1 VCC = 400 V, VGE = 15 V IC = 20 A, Tc = 150 C Eon Eoff 0.1 1 10 100 Gate Registance Rg () (Inductive load) Gate Registance Rg () (Inductive load) Switching Characteristics (Typical) (5) Switching Characteristics (Typical) (6) 1000 Switching Times t (ns) Switching Energy Losses E (mJ) td(off) Switching Energy Losses E (mJ) Switching Times t (ns) VCC = 400 V, VGE = 15 V IC = 20 A, Tc = 150 C 100 100 Collector Current IC (A) (Inductive load) Collector Current IC (A) (Inductive load) 1000 10 VCC = 400 V, VGE = 15 V IC = 20 A, Rg = 10  td(off) 100 td(on) tf 10 1 25 tr 50 75 100 125 Case Temperature Tc (°C) (Inductive load) R07DS1201EJ0200 Rev.2.00 Dec.01.2020 150 10 VCC = 400 V, VGE = 15 V IC = 20 A, Rg = 10  Eon 1 0.1 25 Eoff 50 75 100 125 150 Case Temperature Tc (C) (Inductive load) Page 6 of 8 RJP65T43DPM Transient Thermal Impedance Zth(j-c) (CW) Transient Thermal Impedance vs. Pulse Width 10 Tc = 25 C Notes 7 D=1 0.5 1 0.2 0.1 0.05 0.1 0 .0 2 PDM 0.01 1 shot pulse 0.01 10  100  D= PW T PW T 1m 10 m Pulse Width 100 m 1 10 100 PW (s) Waveform Switching Time Test Circuit VGE 90% Diode clamp 10% L VCC IC 90% 90% D.U.T Rg 10% td(off) tf 10% td(on) tr Notes: 7. Designed target value on Renesas measurement condition. (Not tested) R07DS1201EJ0200 Rev.2.00 Dec.01.2020 Page 7 of 8 RJP65T43DPM Package Dimensions Previous Code TO-3PFM / TO-3PFMV 15.6 ± 0.3 2.0 ± 0.3 2.7 ± 0.3 0.4 3.2 +– 0.2 4.0 ± 0.3 2.6 0.86 MASS[Typ.] 5.2g 5.5 ± 0.3 3.2 ± 0.3 1.6 0.86 0.2 0.66 +– 0.1 5.45 ± 0.5 Unit: mm 21.0 ± 0.5 RENESAS Code PRSS0003ZA-A 5.0 ± 0.3 JEITA Package Code SC-93 5.0 ± 0.3 19.9 ± 0.3 Package Name TO-3PFM 0.2 0.9 +– 0.1 5.45 ± 0.5 Ordering Information Orderable Part No. RJP65T43DPM-00#T1 R07DS1201EJ0200 Rev.2.00 Dec.01.2020 Quantity 360 pcs Shipping Container Box (Tube) Page 8 of 8 Notice 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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