Data Sheet
RJP65T43DPQ-A0
650V - 30A - IGBT
Application: Power Factor Correction circuit
R07DS1376EJ0101
Rev. 1.01
Jul 11, 2017
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C)
Trench gate and thin wafer technology (G7H series)
High speed switching
tf = 45 ns typ. (at VCC = 400V, VGE = 15V, IC=20A, Rg = 10, Ta = 25C, Inductive load)
Operation frequency (20kHz ≤ f ˂ 100kHz)
Rating of collector current IC = 30A (at Tc = 100C)
Not guarantee short circuit withstand time
Key Nominal Performance
Type
RJP65T43DPQ-A0
VCES
650V
IC
20A
VCE(sat), Ta=25°C
1.8V
Tj
175°C
Marking
RJP65T43
Package
TO-247A
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
1. Gate
2. Collector
3. Emitter
4. Collector
G
1 2
E
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector dissipation
Junction to case thermal resistance
Junction temperature
Storage temperature
Symbol
Ratings
Unit
VCES
VGES
IC
IC
iC(peak) Note1
PC
j-c
Tj Note2
Tstg
650
30
60
30
150
150
1.0
175
–55 to +150
V
V
A
A
A
W
°C/W
°C
°C
Note: Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect
a reliability even if it are within the absolute maximum ratings. Please consider derating condition for appropriate
reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage of
Semiconductor Devices) and individual reliability data.
R07DS1376EJ0101 Rev. 1.01
Jul 11, 2017
Page 1 of 7
RJP65T43DPQ-A0
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Total gate charge
Gate to emitter charge
Gate to collector charge
Input capacitance
Output capacitance
Reveres transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on loss energy
Turn-off loss energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on loss energy
Turn-off loss energy
Symbol
ICES
IGES
VGE(off)
VCE(sat)
Qg
Qge
Qgc
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
Min
4.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
1.8
69
10
30
1550
37
26
35
20
105
45
0.17
0.13
32
20
115
45
0.28
0.53
Max
1
±1
7.0
2.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
A
A
V
V
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
Test Conditions
VCE = 650 V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10V, IC = 0.67 mA
IC = 20 A, VGE = 15V Note3
VCE = 400 V
VGE = 15V
Ic= 20A
VCE = 25 V
VGE = 0
f = 1 MHz
VCC = 400 V
VGE = 15 V, IC = 20 A
Rg = 10 TC = 25 °C
Inductive load Note4
VCC = 400 V
VGE = 15 V, IC = 20 A
Rg = 10 TC = 150°C
Inductive load Note4
Notes: 1. PW 10 s, duty cycle 1%
2. Please use this device in the thermal conditions which the junction temperature does not exceed 175°C.
Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175°C.
3. Pulse test
4. Switching time test circuit and waveform are shown below.
R07DS1376EJ0101 Rev. 1.01
Jul 11, 2017
Page 2 of 7
RJP65T43DPQ-A0
Main Characteristics
Collector Dissipation vs.
Case Temperature
Maximum DC Collector Current vs.
Case Temperature
120
Collector Current IC (A)
Collector Dissipation Pc (W)
160
120
80
40
80
60
40
20
0
0
0
25
50
75
0
100 125 150 175
50
75
100 125 150 175
Case Temperature Tc (°C)
Maximum Safe Operation Area
Typical Transfer Characteristics
150
=1
0μ
s
10
10
Collector Current IC (A)
PW
100
0
μs
1
0.1
0.01
1
Tc = 25°C
Single pulse
125
100
150°C
75
Tc = 25°C
50
25
0
10
100
VCE = 10 V
Pulse Test
0
1000
Collector to Emitter Voltage VCE (V)
160
Pulse 2Test
Tc = 25°C
10 V
Pulse Test
Tc = 150°C
9.5 V
15 V
120
9.0 V
11 V
8.5 V
80
8
12
16
20
Typical Output Characteristics
8.0 V
40
VGE = 7.5 V
Collector Current IC (A)
160
4
Gate to Emitter Voltage VGE (V)
Typical Output Characteristics
Collector Current IC (A)
25
Case Temperature Tc (°C)
1000
Collector Current IC (A)
100
10 V
15 V
9.5 V
11 V
9.0 V
120
8.5 V
80
8.0 V
7.5 V
40
VGE = 7.0 V
0
0
0
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
R07DS1376EJ0101 Rev. 1.01
Jul 11, 2017
0
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
Page 3 of 7
RJP65T43DPQ-A0
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Tc = 25°C
Pulse Test
4
IC = 40 A
20 A
10 A
2
1
0
4
8
12
16
20
IC = 40 A
4
20 A
10 A
3
2
1
0
4
16
20
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
6
4
0.67 mA
2
VCE = 10 V
Pulse Test
0
25
50
75
100 125 150
3.5
VGE = 15 V
Pulse Test
3.0
IC = 40 A
2.5
20 A
2.0
1.5
10 A
1.0
0.5
−25
Case Temparature Tc (°C)
100
Coes
10
100
Cres
150
200
250
300
Collector to Emitter Voltage VCE (V)
R07DS1376EJ0101 Rev. 1.01
Jul 11, 2017
Collector to Emitter Voltage VCE (V)
Cies
1000
50
25
50
75
100 125 150
Dynamic Input Characteristics (Typical)
10000
VGE = 0 V
f = 1 MHz
Tc = 25°C
0
Case Temparature Tc (°C)
Typical Capacitance vs.
Collector to Emitter Voltage
Capacitance C (pF)
12
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
IC = 10 mA
0
8
Gate to Emitter Voltage VGE (V)
8
1
Tc = 150°C
Pulse Test
Gate to Emitter Voltage VGE (V)
10
0
−25
5
800
16
VCC = 400 V
IC = 20 A
Tc = 25°C
600
VGE
12
400
8
200
4
VCE
0
0
20
40
60
80
0
100
Gate to Emitter Voltage VGE (V)
3
Collector to Emitter Saturation Voltage
VCE(sat) (V)
5
Collector to Emitter Saturation Voltage
VCE(sat) (V)
Gate to Emitter Cutoff Voltage VGE(off) (V)
Collector to Emitter Saturation Voltage
VCE(sat) (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Gate Charge Qg (nC)
Page 4 of 7
RJP65T43DPQ-A0
Switching Characteristics (Typical) (1)
Swithing Energy Losses E (mJ)
Switching Times t (ns)
1000
VCC = 400 V, VGE = 15 V
Rg = 10 Ω, Tc = 150°C
tf
td(off)
100
td(on)
tr
10
Switching Characteristics (Typical) (2)
10
VCC = 400 V, VGE = 15 V
Rg = 10 Ω, Tc = 150°C
Eon
1
Eoff
0.1
1
10
100
1
Switching Characteristics (Typical) (4)
Switching Characteristics (Typical) (3)
1000
10
100
Swithing Energy Losses E (mJ)
VCC = 400 V, VGE = 15 V
IC = 20 A, Tc = 150°C
Switching Times t (ns)
100
Collector Current IC (A)
(Inductive load)
Collector Current IC (A)
(Inductive load)
td(off)
tf
td(on)
tr
10
VCC = 400 V, VGE = 15 V
IC = 20 A, Tc = 150°C
1
Eon
Eoff
0.1
1
10
100
1
VCC = 400 V, VGE = 15 V
IC = 20 A, Rg = 10 Ω
td(off)
100
td(on)
tr
50
75
100
125
Case Temperature Tc (°C)
(Inductive load)
R07DS1376EJ0101 Rev. 1.01
Jul 11, 2017
150
Swithing Energy Losses E (mJ)
1000
10
25
100
Switching Characteristics (Typical) (6)
Switching Characteristics (Typical) (5)
tf
10
Gate Registance Rg (Ω)
(Inductive load)
Gate Registance Rg (Ω)
(Inductive load)
Switching Times t (ns)
10
10
VCC = 400 V, VGE = 15 V
IC = 20 A, Rg = 10 Ω
1
Eon
Eoff
0.1
25
50
75
100
125
150
Case Temperature Tc (°C)
(Inductive load)
Page 5 of 7
Normalized Transient Thermal Impedance γs (t)
RJP65T43DPQ-A0
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25°C
1
D=1
0.5
θj – c(t) = γs (t) • θj – c
θj – c = 1.0°C/W, Tc = 25°C
0.2
0.1
0.1 0.05
2
0.0
1
o
sh
tp
u
e
ls
PDM
1
0.0
0.01
10 μ
D=
PW
T
PW
T
100 μ
1m
10 m
Pulse Width
100 m
1
10
100
PW (s)
Waveform
Switching Time Test Circuit
VGE
90%
Diode clamp
10%
L
VCC
IC
90%
90%
D.U.T
Rg
10%
td(off)
R07DS1376EJ0101 Rev. 1.01
Jul 11, 2017
tf
10%
td(on)
tr
Page 6 of 7
RJP65T43DPQ-A0
Package Dimensions
JEITA Package Code
-
RENESAS Code
PRSS0003ZH-A
Previous Code
-
MASS[Typ.]
6.14g
Unit: mm
3.60 ± 0.1
5.02 ± 0.19
15.94 ± 0.19
17.63
4.5 max
20.19 ± 0.38
21.13 ± 0.33
6.15
Package Name
TO-247A
5.45
0.1
2.10 +– 0.2
13.26
1.27 ± 0.13
5.45
0.71 ± 0.1
2.41
Ordering Information
Orderable Part Number
RJP65T43DPQ-A0#T2
R07DS1376EJ0101 Rev. 1.01
Jul 11, 2017
Quantity
240 pcs
Shipping Container
Box (Tube)
Page 7 of 7
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