RM3003
32-Kbit Ultra Low Power
Non-volatile Serial Memory - SPI Bus
Advance Summary Datasheet
Features
Memory array: 32Kbit EEPROM-compatible non-volatile serial memory
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- VDDC: 1.0V +/- 3%
- VDDIO: 1.65V - 2.75V
- VDDW: 4.0V +/- 10%
Serial peripheral interface (SPI) compatible
-Supports SPI modes 0 and 3
1.0 MHz maximum clock rate
Flexible Programming
- Byte/Page Program (1 to 32 Bytes)
- Page size: 32 Bytes
Ultra Low Energy Word Write
-32 bit Word Write consuming 50 nJ
Low power consumption
-10 µA active Read current @ 500 kbit/s (Typical)
-10 µA active Write current @ 10 kbit/s (Typical)
-35 nA Ultra-Deep Power-Down current
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Multiple supply voltages for minimum power consumption
on
Auto Ultra-Deep Power-Down
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-Device can enter Ultra-Deep Power-Down automatically after finishing a Write
operation
Self-timed write cycles
Hardware reset
8-lead SOIC package
RoHS-compliant and halogen-free packaging
Data Retention: 10 years
Based on Adesto's proprietary CBRAM® technology
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Description
The Adesto® RM3003 is a 32Kbit, serial memory device that utilizes Adesto's
CBRAM® resistive technology.
The memory device is optimized for low power operation offering lowest available
power for data-transfer, power-down, and writing. In order to efficiently optimize power
consumption, the device makes use of three supplies, VDDW, VDDC, and VDDIO. Read
power is supplied from the VDDC and the device consumes less than10µW at
500Kbit/s. To further reduce data-transfer power, the device supports IO voltages in
the range of 1.65 to 2.75V.
The RM3003 is accessed through a 4-wire SPI interface consisting of a Serial Data
Input (SDI), Serial Data Output (SDO), Serial Clock (SCK), and Chip Select (CS). The
maximum clock (SCK) frequency in read mode is 1.0MHz.
Adesto products in this datasheet are covered by certain Adesto patents registered in the United States
and potentially other countries. Please refer to http://www.adestotech.com/patents for details.
DS-RM3003–103AA–02/2016
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