RQJ0204XGDQA

RQJ0204XGDQA Silicon P Channel MOS FET Power Switching REJ03G1320-0300 Rev.3.00 May 24, 2006 Features • Low on-resistance RDS(on) = 219 mΩ typ (VGS = –4.5 V, ID = –0.8 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 1 2 2 G 1. Source 2. Gate 3. Drain S 1 Note: Marking is “XG”. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current ID Note1 Drain peak current ID(pulse) Body - drain diode reverse drain current IDR Channel dissipation Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) Ratings –20 +8 / –12 –1.6 –4.0 –1.6 0.8 150 –55 to +150 Unit V V A A A W °C °C Rev.3.00 May 24, 2006 page 1 of 6 RQJ0204XGDQA Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Drain to source leak current Gate to source cutoff voltage Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body - drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS V(BR)GSS IGSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF Min –20 +8 –12 — — — –0.4 — — 1.3 — — — — — — — — — — — Typ — — — — — — — 219 363 1.9 153 37 31 14 33 24 8 2.2 0.5 0.9 –0.85 Max — — — +10 –10 –1 –1.4 280 510 — — — — — — — — — — — –1.1 Unit V V V µA µA µA V mΩ mΩ S pF pF pF ns ns ns ns nC nC nC V Test conditions ID = –10 mA, VGS = 0 IG = +100 µA, VDS = 0 IG = –100 µA, VDS = 0 VGS = +6 V, VDS = 0 VGS = –10 V, VDS = 0 VDS = –20 V, VGS = 0 VDS = –10 V, ID = –1 mA ID = –0.8 A, VGS = –4.5 VNote3 ID = –0.8 A, VGS = –2.5 VNote3 ID = –0.8 A, VDS = –10 VNote3 VDS = –10 V VGS = 0 f = 1 MHz ID = –0.8 A VGS = –4.5 V RL = 12.5 Ω Rg = 4.7 Ω VDD = –10 V VGS = –4.5 V ID = –1.6A IF = –1.6 A, VGS = 0 Note3 Rev.3.00 May 24, 2006 page 2 of 6 RQJ0204XGDQA Main Characteristics Maximum Channel Power Dissipation Curve 1 –100 Operation in this area is limited by RDS(on) 100 µs Maximum Safe Operation Area Channel Dissipation Pch (W) Drain Current ID (A) 0.8 –10 0.6 –1 0.4 –0.1 Ta = 25°C 1 Shot Pulse 1 PW 0 m =s D 10 C 0 O m pe s ra tio n 1 s m 0.2 0 0 50 100 150 –0.01 –0.01 –0.1 –1 –10 –100 Ambient Temperature Ta (°C) *When using the glass epoxy board (FR-4: 40 × 40 × 1 mm) Drain to Source Voltage VDS (V) –7 VTypical Output –10 V –6 V –4.5 V Characteristics –4 –3.0 V Typical Transfer Characteristics (1) VDS = –10 V Pulse Test –4 Drain Current ID (A) –3 Drain Current ID (A) –3.2 V –3.4 V –3.6 V –3.8 V –4.0 V –2.8 V –2.6 V –3 –2 –2.4 V –2.2 V –2 –1 Pulse Test Tc = 25°C –2.0 V –1 Tc = 75°C 0 25°C –25°C –2 –3 0 VGS = 0 V 0 –2 –4 –6 –8 –10 0 –1 –4 –5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Gate to Source Cutoff Voltage vs. –1 VDS = –10 V Pulse Test Gate to Source Cutoff Voltage VGS(off) (V) Typical Transfer Characteristics (2) Case Temperature –1.5 VDS = –10 V Pulse Test ID = –10 mA –1 mA Drain Current ID (A) –0.1 –1 –0.01 Tc = 75°C –0.001 25°C –25°C –0.5 –0.1 mA –0.0001 0 –0.5 –1 –1.5 –2 –2.5 –3 0 –25 0 25 50 75 100 125 150 Gate to Source Voltage VGS (V) Case Temperature Tc (°C) Rev.3.00 May 24, 2006 page 3 of 6 RQJ0204XGDQA Drain to Source Saturation Voltage VDS(on) (mV) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) (mΩ) –900 –800 –700 –600 –500 –400 –300 –200 –100 Pulse Test Tc = 25°C 10000 Pulse Test Tc = 25°C 1000 VGS = –2.5 V –4.5 V –10 V 100 –0.1 –1 –10 –100 –1.6 A –0.5 A –0.8 A –0.2 A –2 –4 –6 –8 –10 0 0 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Case Temperature Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source on State Resistance RDS(on) (mΩ) 800 700 600 –0.8 A 500 400 –0.5 A 300 200 100 –25 –0.2 A Pulse Test VGS = –2.5 V 0 25 50 75 100 125 150 ID = –1.6 A 400 Pulse Test VGS = –4.5 V ID = –1.6 A 300 –0.8 A –0.5 A 200 –0.2 A 100 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Case Temperature Tc (°C) Zero Gate Voltage Drain current vs. Case Temperature –1000 Pulse Test VGS = 0 V VDS = –20 V Forward Transfer Admittance |yfs| (S) 10 Pulse Test VDS = –10 V 1 25°C Tc = 75°C –25°C Zero Gate Voltage Drain current IDSS (nA) Forward Transfer Admittance vs. Drain Current –100 –10 0.1 –1 0.01 –0.01 –0.1 –1 –10 –0.1 –25 0 25 50 75 100 125 150 Drain Current ID (A) Case Temperature Tc (°C) Rev.3.00 May 24, 2006 page 4 of 6 RQJ0204XGDQA Dynamic Input Characteristics Switching Characteristics Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 0 VDS 0 1000 Switching Time t (ns) –10 –5 V –10 V VDD = –20 V –10 V –5 V –4 VDD = –10 V VGS = –4.5 V Rg = 4.7 Ω PW = 5 µs 100 Tc = 25°C tr td(off) 10 tf td(on) –20 VDD = –20 V –8 –30 ID = –1.6 A Tc = 25°C 0 1 2 3 VGS –12 1 –0.1 –1 –10 4 5 6 Gate Charge Qg (nc) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage 1000 VGS = 0 V f = 1 MHz Input Capacitance vs. Gate to Source Voltage 320 Ciss, Coss, Crss (pF) 300 Ciss (pF) Ciss 100 280 260 Coss Crss 10 –0 –5 –10 –15 –20 240 220 –10 –8 –6 –4 –2 VDS = 0 V f = 1 MHz 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage –4 Gate to Source Voltage VGS (V) Body-Drain Diode Forward Voltage vs. Case Temperature –0.7 VGS = 0 –0.6 –0.5 –0.4 –0.3 –0.2 –0.1 25 –1 mA Reverse Drain Current IDR (A) Pulse Test Tc = 25°C –3 Body-Drain Diode Forward Voltage VSDF (V) ID = –10 mA –2 –10V –5V –1 5, 10 V VGS = 0 V –0.4 –0.8 –1.2 –1.6 –2.0 0 0 50 75 100 125 150 Source to Drain Voltage VSD (V) Case Temperature Tc (°C) Rev.3.00 May 24, 2006 page 5 of 6 RQJ0204XGDQA Package Dimensions Package Name MPAK JEITA Package Code SC-59A RENESAS Code PLSP0003ZB-A Previous Code MPAK(T) / MPAK(T)V MASS[Typ.] 0.011g D e A Q c E HE L A A xM S A b L1 A3 e LP Reference Dimension in Millimeters Symbol Min Nom Max A2 A A1 S b b1 c b2 A-A Section e1 c1 I1 Pattern of terminal position areas A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x b2 e1 I1 Q 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 1.1 0.25 0.42 0.4 0.13 0.11 1.5 0.95 2.8 1.3 0.1 1.2 0.5 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.05 1.95 0.3 Ordering Information Part Name RQJ0204XGDQATL-E Quantity 3000 pcs. Shipping Container φ178 mm reel, 8 mm Emboss taping Rev.3.00 May 24, 2006 page 6 of 6 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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