RQJ0301HGDQSTL-E

RQJ0301HGDQS Silicon P Channel MOS FET Power Switching REJ03G1265-0300 Rev.3.00 Jun 05, 2006 Features • Low on-resistance RDS(on) = 38 m Ω typ (VGS = –10 V, ID = –2.6 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 2, 4 D 2 3 1G 4 S 3 1 1. Gate 2. Drain 3. Source 4. Drain Note: Marking is “HG”. *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Symbol VDSS VGSS ID Ratings –30 +10 / –20 –5.2 –7.6 –5.2 1.5 5 150 –55 to +150 Unit V V A A A W W °C °C Drain peak current ID (pulse)Note1 Body - drain diode reverse drain current IDR Channel dissipation Pch Note2 Channel dissipation Pch (pulse)Note1 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 1 s, duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) Rev.3.00 Jun 05, 2006 page 1 of 6 RQJ0301HGDQS Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Gate to source leak current Drain to source leak current Gate to source cutoff voltage Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body - drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS V(BR)GSS IGSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF Min –30 +10 –20 — — — –1.0 — — 4.1 — — — — — — — — — — — Typ — — — — — — — 38 56 6.8 845 153 118 22 41 50 6.8 18 1.6 6.0 –0.8 Max — — — +10 –10 –1 –2.0 48 79 — — — — — — — — — — — — Unit V V V µA µA µA V mΩ mΩ S pF pF pF ns ns ns ns nC nC nC V Test conditions ID = –10 mA, VGS = 0 IG = +100 µA, VDS = 0 IG = –100 µA, VDS = 0 VGS = +8 V, VDS = 0 VGS = –16 V, VDS = 0 VDS = –30 V, VGS = 0 VDS = –10 V, ID = –1 mA ID = –2.6 A, VGS = –10 VNote3 ID = –2.6 A, VGS = –4.5 VNote3 ID = –2.6 A, VDS = –10 VNote3 VDS = –10 V, VGS = 0, f = 1 MHz ID = –1 A, VGS = –10 V, RL = 10 Ω, Rg = 4.7 Ω VDD = -10 V, VGS = -10 V, ID = –5.2 A IF = –1.5 A, VGS = 0Note3 Rev.3.00 Jun 05, 2006 page 2 of 6 RQJ0301HGDQS Main Characteristics Maximum Channel Power Dissipation Curve 2.0 –100 Operation in this area is limited by RDS(on) –10 PW 1 m Maximum Safe Operation Area Channel Dissipation Pch (W) 1.5 Drain Current ID (A) 100 µs = s 1.0 –1 DC 10 O pe m s ra tio n 0.5 –0.1 Ta = 25°C 1 Shot Pulse 0 0 25 50 75 100 125 150 –0.01 –0.01 –0.1 –1 –10 –100 *When using the glass epoxy board (FR-4: 40 × 40 × 1 mm) Ambient Temperature Ta (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics –10 V Typical Transfer Characteristics (1) –6 –5 VDS = –10 V Pulse Test –6 –5 –4 –3 –2 –1 0 Pulse Test Tc = 25°C –2.9 V –3.0 V –3.5 V –2.8 V –2.7 V Drain Current ID (A) Drain Current ID (A) –2.6 V –2.5 V –2.4 V –2.3 V –2.2 V –4 –3 –2 –1 25°C Tc = 75°C 0 0 –1 –2 –25°C –3 –4 –5 VGS = 0 V 0 –2 –4 –6 –8 –10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Gate to Source Cutoff Voltage vs. –0.1 VDS = –10 V Pulse Test Gate to Source Cutoff Voltage VGS(off) (V) Typical Transfer Characteristics (2) Case Temperature –2 Drain Current ID (A) Tc = 75°C –0.01 25°C –1.5 ID = –10 mA –1 mA –1 –0.1 mA VDS = –10 V Pulse Test 0 25 50 –0.001 –25°C –0.0001 0 –0.5 –1 –1.5 –2 –2.5 –3 –0.5 –25 75 100 125 150 Gate to Source Voltage VGS (V) Case Temperature Tc (°C) Rev.3.00 Jun 05, 2006 page 3 of 6 RQJ0301HGDQS Drain to Source Saturation Voltage vs. Gate to Source Voltage –0.3 –0.25 –0.2 –0.15 –0.1 –1 A –2.6 A –2 A –1.5 A Drain to Source Saturation Voltage VDS(on) (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) (Ω) 100 Pulse Test Tc = 25°C VDS = –4.5 V Pulse Test Tc = 25°C –10 V 30 –0.05 0 0 –0.5 A –4 –8 –12 –16 –20 10 –0.1 –1 –10 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature Static Drain to Source on State Resistance vs. Case Temperature Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source on State Resistance RDS(on) (mΩ) 90 80 70 60 50 –0.5 A 70 60 50 40 –0.5 A Pulse Test VGS = –4.5 V ID = –2.6 A –1.5 A Pulse Test VGS = –10 V ID = –2.6 A –1.5 A 40 30 20 10 –25 0 25 50 75 100 125 150 30 20 10 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current Case Temperature Tc (°C) Zero Gate Voltage Drain current vs. Case Temperature –1000 Pulse Test VGS = 0 V VDS = –30 V –100 100 Pulse Test VDS = –10 V 10 –25°C Tc = 75°C 1 25°C Zero Gate Voltage Drain current IDSS (nA) Forward Transfer Admittance |yfs| (S) –10 0.1 –0.1 –1.0 –10.0 –1 –25 0 25 50 75 100 125 150 Drain Current ID (A) Case Temperature Tc (°C) Rev.3.00 Jun 05, 2006 page 4 of 6 RQJ0301HGDQS Dynamic Input Characteristics Drain to Source Voltage VDS (V) VDS –20 Switching Characteristics Gate to Source Voltage VGS (V) 0 1000 tr 0 VDD = –10 V –40 –25 V –10 V –8 Switching Time t (ns) VDD = –25 V –4 100 td(on) 10 td(off) –60 VGS –12 –80 –16 ID = –5.2 A Tc = 25°C –100 –20 0 4 8 12 16 20 –0.01 1 VDD = –10 V VGS = –10 V Rg = 4.7 Ω PW = 5 µs Tc = 25°C –0.1 –1 tf –10 Gate Charge Qg (nC) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage 10000 VGS = 0 V f = 1 MHz Input Capacitance vs. Gate to Source Voltage 1500 VDS = 0 V f = 1 MHz 1400 Ciss Ciss, Coss, Crss (pF) Ciss (pF) 1000 1300 Coss 100 Crss 1200 1100 10 –0 –10 –20 –30 1000 –10 –5 0 5 10 Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage –6 Gate to Source Voltage VGS (V) Body-Drain Diode Forward Voltage vs. Case Temperature –0.8 Body-Drain Diode Forward Voltage VSDF (V) Reverse Drain Current IDR (A) –5 –10V –4 –5V –3 –2 Pulse Test Tc = 25°C VGS = 0 –0.7 –0.6 ID = –10 mA –0.5 –0.4 –0.3 –0.2 –0.1 –1 mA VGS = 0 V,5 V –1 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 –25 0 25 50 75 100 125 150 Source Drain Voltage VSD (V) Case Temperature Tc (°C) Rev.3.00 Jun 05, 2006 page 5 of 6 RQJ0301HGDQS Package Dimensions Package Name UPAK JEITA Package Code SC-62 RENESAS Code PLZZ0004CA-A Previous Code UPAK / UPAKV MASS[Typ.] 0.050g Unit: mm 4.5 ± 0.1 1.5 1.5 3.0 Ordering Information Part Name RQJ0301HGDQSTL-E Quantity 1000 pcs. Shipping Container φ178 reel, 12 mm Emboss taping Rev.3.00 Jun 05, 2006 page 6 of 6 0.8 Min 0.44 Max (0.4) 0.53 Max 0.48 Max (2.5) φ1 2.5 ± 0.1 4.25 Max 0.4 1.8 Max 1.5 ± 0.1 0.44 Max (1.5) (0.2) Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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