RQJ0306FQDQA

RQJ0306FQDQA Silicon P Channel MOS FET Power Switching REJ03G1719-0100 Rev.1.00 Jul 28, 2008 Features • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 1 2 2 G 1. Source 2. Gate 3. Drain S 1 Notes: Marking is "FQ". Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Tch Tstg Ratings –30 +8 / –12 –3 –12 3 0.8 150 –55 to +150 Unit V V A A A W °C °C Notes: 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm) REJ03G1719-0100 Rev.1.00 Jul 28, 2008 Page 1 of 7 RQJ0306FQDQA Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Gate to source leak current Drain to source leak current Gate to source cutoff voltage Drain to source on state resistance Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge Gate to Source charge Gate to drain charge Body - drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS V(BR)GSS IGSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF Min –30 +8 –12 — — — –0.4 — — 3.5 — — — — — — — — — — — Typ — — — — — — — 75 120 5.2 510 100 58 18 48 47 13 4.8 0.8 1.8 –0.8 Max — — — +10 –10 –1 –1.4 95 165 — — — — — — — — — — — –1.2 Unit V V V µA µA µA V mΩ mΩ S pF pF pF ns ns ns ns nC nC nC V Test conditions ID = –10 mA, VGS = 0 IG = +100 µA, VDS = 0 IG = –100 µA, VDS = 0 VGS = +6 V, VDS = 0 VGS = –10 V, VDS = 0 VDS = –30 V, VGS = 0 VDS = –10 V, ID = -1 mA ID = –1.5 A, VGS = –4.5 V Note3 ID = –1.5 A, VGS = –2.5 V Note3 ID = –1.5 A, VDS = –10 V Note3 VDS = –10 V, VGS = 0, f = 1 MHz ID = –1.5 A VGS = –4.5 V RL = 6.7 Ω Rg = 4.7 Ω VDD = –10 V VGS = –4.5 V ID = –3.0 A IF = –3.0 A, VGS = 0 Note3 REJ03G1719-0100 Rev.1.00 Jul 28, 2008 Page 2 of 7 RQJ0306FQDQA Main Characteristics Maximum Channel Power Dissipation Curve 1 –100 Maximum Safe Operation Area Ta = 25°C 1 Shot Pulse 100 µs Channel Dissipation Pch (W) Drain Current ID (A) 0.8 –10 1 m s 0.6 10 –1 D C O m s 0 10 0.4 m s n tio ra pe –0.1 Operation in this area is limited by RDS(on) 0.2 0 0 25 50 75 100 125 150 –0.01 –0.01 –0.1 –1 –10 –100 Ambient Temperature Ta (°C) *When using the glass epoxy board (FR-4 40 x 40 x 1 mm) Drain to Source Voltage VDS (V) –10 V –6 V Typical Output Characteristics –3.0 –2.6 V –2.4 V –2.2 V –2.0 V Typical Transfer Characteristics (1) VDS = –10 V Pulse Test –10 –2.8 V –3.0 V Drain Current ID (A) Pulse Test Tc = 25°C Drain Current ID (A) –8 –6 –2.5 –2.0 –1.5 –1.0 –0.5 0 –4 –1.8 V –1.6 V Tc = 75°C 25°C –25°C –2 –1.4 V VGS = 0V 0 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Gate to Source Cutoff Voltage vs. Gate to Source Cutoff Voltage VGS(off) (V) Typical Transfer Characteristics (2) –1 Tc = 75°C Case Temperature 1.5 Drain Current ID (A) –0.1 –1 mA 25°C –25°C ID = –10 mA 1.0 –0.01 0.5 –0.1 mA VDS = –10 V Pulse Test –0.001 VDS = –10 V Pulse Test –0.0001 0 –0.5 –1 –1.5 –2 –2.5 –3 0 –25 0 25 50 75 100 125 150 Gate to Source Voltage VGS (V) Case Temperature Tc (°C) REJ03G1719-0100 Rev.1.00 Jul 28, 2008 Page 3 of 7 RQJ0306FQDQA Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current Drain to Source Saturation Voltage VDS(on) (V) –0.5 Drain to Source on State Resistance RDS(on) (Ω) Pulse Test Tc = 25°C 1 –0.4 –0.3 ID = –3.0 A –2.0 A –1.5 A –1.0 A –0.5 A VGS = –2.5 V 0.1 –4.5 V –10 V –0.2 –0.1 0 0 –2 –4 –6 –8 –10 0.01 –0.1 Pulse Test Tc = 25°C –1 –10 –100 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Case Temperature (1) Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature (2) Drain to Source on State Resistance RDS(on) (Ω) Drain to Source on State Resistance RDS(on) (Ω) 0.25 ID = –3.0 A –2.5 A 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 –25 0 25 50 75 Pulse Test VGS = –4.5 V 100 125 150 –0.5A ID = –3.0 A –2.5 A –2.0 A –1.5 A –1.0A 0.2 –2.0 A 0.15 –1.5 A 0.1 –1.0A –0.5A 0.05 Pulse Test VGS = –2.5 V 0 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current Case Temperature Tc (°C) Zero Gate Voltage Drain current vs. Case Temperature –10000 Pulse Test VGS = 0 V VDS = –30 V 10 Pulse Test VDS = –10 V 25°C –25°C Zero Gate Voltage Drain current IDSS (nA) Forward Transfer Admittance |yfs| (S) –1000 Tc = 75°C –100 –10 1 –0.1 1 10 –1 –25 0 25 50 75 100 125 150 Drain Current ID (A) Case Temperature Tc (°C) REJ03G1719-0100 Rev.1.00 Jul 28, 2008 Page 4 of 7 RQJ0306FQDQA Dynamic Input Characteristics Drain to Source Voltage VDS (V) VDD = –10 V –25 V Switching Characteristics Gate to Source Voltage VGS (V) 0 1000 0 –10 VDD = –10 V –25 V –2 Switching Time t (ns) 100 tr td(off) td(on) –20 –4 10 VGS = –4.5 V, VDD = –10 V Rg = 4.7 Ω, duty ≤ 1 % Tc = 25°C tf –30 –6 –40 0 ID = –3 A Tc = 25°C 2 4 6 8 –8 10 1 –0.01 –0.1 –1 –10 Gate Charge Qg (nC) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage 1000 Ciss 950 900 Input Capacitance vs. Gate to Source Voltage Ciss, Coss, Crss (pF) 100 Coss Ciss (pF) 850 800 750 700 650 –10 –8 –6 –4 –2 0 Crss 10 1 VGS = 0 V f = 1 MHz VDS = 0 f = 1MHz 2 4 6 8 10 –0 –5 –10 –15 –20 –25 –30 Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage –10 Gate to Source Voltage VGS (V) Body-Drain Diode Forward Voltage vs. Case Temperature –0.6 VGS = 0 Reverse Drain Current IDR (A) Pulse Test Tc = 25°C –8 Body-Drain Diode Forward Voltage VSDF (V) –0.5 ID = –10 mA –6 –10 V –0.4 –1 mA –4 –4.5 V –2.5 V –2 0 –0 V –0.3 VGS = 2.5, 4.5, 10 V 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –0.2 –25 0 25 50 75 100 125 150 Source to Drain Voltage VSD (V) Case Temperature Tc (°C) REJ03G1719-0100 Rev.1.00 Jul 28, 2008 Page 5 of 7 RQJ0306FQDQA Switching Time Test Circuit Vin Monitor D.U.T. Vout Monitor RL VDD = –30 V Vout td(on) Vin 10% 90% Switching Time Waveform Rg Vin –10 V 90% 90% 10% 10% td(off) tf tr REJ03G1719-0100 Rev.1.00 Jul 28, 2008 Page 6 of 7 RQJ0306FQDQA Package Dimensions Package Name MPAK JEITA Package Code SC-59A RENESAS Code PLSP0003ZB-A Previous Code MPAK(T) / MPAK(T)V MASS[Typ.] 0.011g D e A Q c E HE L L1 A3 LP A A xM S A b e Reference Dimension in Millimeters Symbol Min Nom Max A2 A A1 S b I1 e1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b c D E e HE L L1 LP x b2 e1 I1 Q 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 1.1 0.25 0.4 0.16 1.5 0.95 2.8 1.3 0.1 1.2 0.5 0.26 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.05 1.95 0.3 Ordering Information Part No. RQJ0306FQDQATL-E 3000 pcs. Quantity Shipping Container φ178 mm reel, 8 mm Emboss taping REJ03G1719-0100 Rev.1.00 Jul 28, 2008 Page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. 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