UPA1804GR-9JG-E1-A

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1804 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING (Unit : mm) DESCRIPTION The µPA1804 is a switching device which can be 8 driven directly by a 4.5 V power source. 5 The µPA1804 features a low on-state resistance and 1, 5, 8 : Drain 2, 3, 6, 7: Source 4 : Gate excellent switching characteristics, and is suitable for applications such as power switch of portable machine 1.2 MAX. 1.0±0.05 0.25 and so on. 3° +5° –3° FEATURES 0.1±0.05 • Can be driven by a 4.5 V power source 1 4 0.5 0.6 +0.15 –0.1 • Low on-state resistance RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 32 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) 6.4 ±0.2 • Built-in G-S protection diode against ESD ORDERING INFORMATION PART NUMBER PACKAGE µPA1804GR-9JG 0.65 0.27 +0.03 –0.08 Power TSSOP8 0.10 M EQUIVALENT CIRCUIT Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±8.0 A ID(pulse) ±32 A PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Note1 Total Power Dissipation Note2 1.0 ±0.2 0.1 0.8 MAX. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain Current (pulse) 4.4 ±0.1 0.145 ±0.055 3.15 ±0.15 3.0 ±0.1 Drain Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on ceramic substrate of 5000 mm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13868EJ2V0DS00 (2nd edition) Date Published May 2001 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1998,1999 µ PA1804 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±16 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 1.0 2.1 2.5 V | yfs | VDS = 10 V, ID = 4.0 A 3 8.7 RDS(on)1 VGS = 10 V, ID = 4.0 A 18 23 mΩ RDS(on)2 VGS = 4.5 V, ID = 4.0 A 24 32 mΩ Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = 10 V 761 pF Output Capacitance Coss VGS = 0 V 258 pF Reverse Transfer Capacitance Crss f = 1 MHz 99 pF Turn-on Delay Time td(on) VDD = 15 V 24 ns tr ID = 4.0 A 83 ns VGS(on) = 10 V 46 ns tf RG = 10 Ω 29 ns Total Gate Charge QG VDS = 24 V 13.5 nC Gate to Source Charge QGS ID = 8.0 A 2.4 nC Gate to Drain Charge QGD VGS = 10 V 3.7 nC Rise Time Turn-off Delay Time td(off) Fall Time Diode Forward Voltage VF(S-D) IF = 8.0 A, VGS = 0 V 0.86 V Reverse Recovery Time trr IF = 8.0 A, VGS = 0 V 27 ns Reverse Recovery Charge Qrr di/dt = 100 A / µs 16 nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG RG = 10 Ω PG. VGS VGS Wave Form 0 PG. 90 % 90 % ID VGS 0 ID Wave Form τ τ = 1µ s Duty Cycle ≤ 1 % 10 % 0 10 % tr td(on) ton RL 50 Ω VDD 90 % VDD ID 2 VGS(on) 10 % IG = 2 mA td(off) tf toff Data Sheet D13868EJ2V0DS µ PA1804 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA ★ FORWARD BIAS SAFE OPERATING AREA 100 d ite V) Lim 10 = R V (@ ID(pulse) n) (o DS GS 80 ID - Drain Current - A dT - Derating Factor - % 100 60 40 20 10 PW ID(DC) 10 10 0m s DC 1 =1 ms ms 0.1 TA = 25˚C Single Pulse Mounted on Ceramic Substrate of 50cm x 1.1mm 0 30 60 120 90 TA - Ambient Temperature - ˚C 0.01 0.1 150 10 1 100 VDS - Drain to Source Voltage - V 2 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE TRANSFER CHARACTERISTICS 30 100 VDS = 10 V VGS = 10 V 10 ID - Drain Current - A ID - Drain Current - A 25 4.5 V 20 15 10 5 1 TA = −25˚C 25˚C 75˚C 125˚C 0.1 0.01 0.001 0.0001 0 0.2 0.00001 0.6 0.4 0.8 1.0 4.0 2.0 3.0 VGS - Gate to Sorce Voltage - V 1.0 VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE Vs. DRAIN CURRENT 2.5 VDS = 10 V ID = 1 mA 2.0 1.5 −50 0 50 100 150 100 | yfs | - Forward Transfer Admittance - S VGS(off) - Gate to Source Cut-off Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V 10 TA = −25˚C 25˚C 75˚C 125˚C 1 0.1 0.01 0.1 1 10 100 ID - Drain Current - A Tch - Channel Temperature - ˚C Data Sheet D13868EJ2V0DS 3 50 VGS = 4.5 V 40 TA = 125˚C 75˚C 30 25˚C −25˚C 20 RDS (on) - Drain to Source On-state Resistance - mΩ 10 0.01 0.1 1 10 ID - Drain Current - A 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 40 ID = 4.0 A VGS = 4.5 V 30 10 V 20 10 −50 0 50 100 150 RDS (on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ µ PA1804 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 40 30 TA = 125˚C 75˚C 20 10 0.01 40 30 20 10 0 4 12 8 16 20 SWITCHING CHARACTERISTICS 1000 f = 1 MHz VGS = 0 V td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 100 VGS - Gate to Source Voltage - V 1000 Ciss Coss 100 Crss 10 10 100 tr 100 tf td(off) td(on) 10 VDD = 15 V VGS(on) = 10V 1 RG = 10 Ω 0.1 1 ID - Drain Current - A VDS - Drain Source Voltage - V 4 0.1 1 10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 ID = 4.0 A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1 25˚C −25˚C Tch - Channel Temperature - ˚C 10000 VGS = 10 V Data Sheet D13868EJ2V0DS 10 µ PA1804 DYNAMIC INPUT CHARACTERISTICS 12 ID = 8.0 A VGS - Gate to Source Voltage - V IF - Source to Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 10 1 0.1 0.01 0.4 0.8 0.6 VDD = 24 V 15 V 6V 8 6 4 2 0 1.2 1.0 10 2 4 10 12 14 16 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - ˚C/W 8 Qg - Gate Charge - nC VF(S-D) - Source to Drain Voltage - V ★ 6 Mounted on ceramic Substrate of 50 cm2 x 1.1 mm Single Pulse 100 62.5˚C/W 10 1 0.1 0.001 0.01 0.1 1 10 100 1000 PW - Pulse Width - s Data Sheet D13868EJ2V0DS 5 µ PA1804 [MEMO] 6 Data Sheet D13868EJ2V0DS µ PA1804 [MEMO] Data Sheet D13868EJ2V0DS 7 µ PA1804 • The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4