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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1873
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
PACKAGE DRAWING (Unit : mm)
DESCRIPTION
The µPA1873 is a switching device which can be
driven directly by a 2.5 V power source.
This device features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
8
5
1
2, 3
4
5
6, 7
8
FEATURES
µPA1873GR-9JG
Power TSSOP8
0.25
0.1±0.05
1
4
0.65
0.27 +0.03
–0.08
0.5
0.6 +0.15
–0.1
6.4 ±0.2
4.4 ±0.1
0.145 ±0.055
3.15 ±0.15
3.0 ±0.1
ORDERING INFORMATION
PACKAGE
1.2 MAX.
1.0±0.05
3° +5°
–3°
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 23.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)
RDS(on)2 = 24.0 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A)
RDS(on)3 = 28.0 mΩ MAX. (VGS = 3.1 V, ID = 3.0 A)
RDS(on)4 = 29.0 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A)
• Built-in G-S protection diode against ESD
PART NUMBER
: Drain1
: Source1
: Gate1
: Gate2
: Source2
: Drain2
1.0 ±0.2
0.1
0.8 MAX.
0.10 M
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±12
V
Drain Current (DC) (TA = 25°C)
ID(DC)
±6.0
A
ID(pulse)
±80
A
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Drain Current (pulse)
Note1
Total Power Dissipation (2 unit)
Note2
EQUIVALENT CIRCUIT
Drain1
Gate1
Drain2
Body
Diode
Gate
Protection
Diode
Source1
Body
Diode
Gate2
Gate
Protection
Diode
Source2
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2
2. Mounted on ceramic substrate of 5000 mm x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G15629EJ1V0DS00 (1st edition)
Date Published December 2001 NS CP(K)
Printed in Japan
©
2001
µ PA1873
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
10
µA
Gate Leakage Current
IGSS
VGS = ±12 V, VDS = 0 V
±10
µA
VGS(off)
VDS = 10 V, ID = 1.0 mA
0.5
1.5
V
| yfs |
VDS = 10 V, ID = 3.0 A
5.0
RDS(on)1
VGS = 4.5 V, ID = 3.0 A
13.0
18.0
23.0
mΩ
RDS(on)2
VGS = 4.0 V, ID = 3.0 A
14.0
19.0
24.0
mΩ
RDS(on)3
VGS = 3.1 V, ID = 3.0 A
14.5
21.5
28.0
mΩ
RDS(on)4
VGS = 2.5 V, ID = 3.0 A
15.0
24.5
29.0
mΩ
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
1.0
S
Input Capacitance
Ciss
VDS = 10 V
705
pF
Output Capacitance
Coss
VGS = 0 V
205
pF
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
145
pF
Turn-on Delay Time
td(on)
VDD = 10 V, ID = 3.0 A
60
ns
tr
VGS = 4.0 V
310
ns
td(off)
RG = 10 Ω
380
ns
420
ns
Rise Time
Turn-off Delay Time
Fall Time
tf
Total Gate Charge
QG
VDD = 16 V
9.0
nC
Gate to Source Charge
QGS
VGS = 4.0 V
2.0
nC
Gate to Drain Charge
QGD
ID = 6.0 A
4.0
nC
VF(S-D)
IF = 6.0 A, VGS = 0 V
0.84
V
Reverse Recovery Time
trr
IF = 6.0 A, VGS = 0 V
480
ns
Reverse Recovery Charge
Qrr
di/dt = 50 A / µs
1200
nC
Body Diode Forward Voltage
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
VGS
RL
VGS
RG
PG.
Wave Form
VDD
0
VGS
10%
PG.
90%
τ
τ = 1 µs
Duty Cycle ≤ 1%
2
90%
VDS
VDS
10%
0
10%
Wave Form
td(on)
tr
ton
RL
50 Ω
VDD
90%
VDS
VGS
0
IG = 2 mA
td(off)
tf
toff
Data Sheet G15629EJ1V0DS
µ PA1873
TYPICAL CHARACTERISTICS (TA = 25°C)
FORWARD BIAS SAFE OPERATING AREA
100
1000
80
100
ID - Drain Current - A
dT - Derating Factor - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
60
40
20
0
ID (DC)
10
30
60
120
90
TA - Ambient Temperature - ˚C
0
DC
0.01
0.1
150
ID - Drain Current - A
ID - Drain Current - A
4.0 V
10
3.1 V
2.5 V
Pulsed
VDS = 10 V
0.4
TA = 125˚C
1
TA = 25˚C
0.1
75˚C
0.01
−25˚C
0.001
0.0001
0.00001
0.2
0.6
0.8
1.0
0
0.5
100.00
| yfs | - Forward Transfer Admittance - S
1.5 VDS = 10 V
ID = 1mA
1.0
100
1.5
2
2.5
FORWARD TRANSFER ADMITTANCE Vs.
DRAIN CURRENT
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
50
1
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
0
100
100
VGS = 4.5 V
15
10
1
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
Pulsed
5
VGS(off) - Gate Cut-off Voltage - V
s
Single Pulse
PD (FET1) : PD (FET2) = 1:1
20
0.5
−50
=1
0µ
10
ms
100
ms
1
10
0
0
1m
s
PW
100
µs
0.1
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
25
ID (pulse)
ited
Lim
)
(on)
RDS = 4.5 V
S
G
(V
150
VDS = 10 V
Pulsed
10.00
TA = −25˚C
1.00
25˚C
75˚C
125˚C
0.10
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
Tch - Channel Temperature - ˚C
Data Sheet G15629EJ1V0DS
3
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
Pulsed
VGS = 2.5 V
TA = 125˚C
75˚C
30
25˚C
−25˚C
20
10
0.01
0.1
1
10
100
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
µ PA1873
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
Pulsed
VGS = 3.1 V
TA = 125˚C
30
75˚C
25˚C
20
−25˚C
10
0.01
0.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
Pulsed
VGS = 4.0 V
30
TA = 125˚C
75˚C
20
25˚C
−25˚C
10
0.01
0.1
1
10
100
VGS = 2.5 V
3.1 V
30
4.0 V
4.5 V
20
10
50
100
150
RDS (on) - Drain to Source On-state Resistance - mΩ
RDS (on) - Drain to Source On-state Resistance - mΩ
Pulsed
ID = 3 A
0
40
Pulsed
VGS = 4.5 V
30
TA = 125˚C
75˚C
20
25˚C
−25˚C
10
0.01
0.1
1
10
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
60
Pulsed
ID = 3.0 A
50
40
30
20
10
0
0
2
4
6
8
10
VGS - Gate to Source Voltage - V
Tch - Channel Temperature - ˚C
4
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
−50
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
40
1
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
ID - Drain Current - A
Data Sheet G15629EJ1V0DS
12
µ PA1873
SWITCHING CHARACTERISTICS
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
1000
td(on), tr, td(off), tf - Switching Time - ns
VGS = 0 V
f = 1 MHz
1000
Ciss
Coss
Crss
100
10
0.1
1
10
td (off)
tf
tr
100
td (on)
10
0.1
100
VDD = 10 V
VGS = 4.0 V
RG = 10 Ω
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
5
Pulsed
VGS = 0 V
VGS - Gate to Source Voltage - V
100
10
1
0.1
0.01
0.4
0.6
0.8
10
1
VDS - Drain to Source Voltage - V
IF - Diode Forward Current - A
1.0
VDD = 16 V
4
10 V
3
2
1
0
1.2
ID = 6.0 A
0
4
8
QG - Gate Charge - nC
VF(S-D) - Source to Drain Voltage - V
12
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(ch-A) - Transient Thermal Resistance - ˚C/W
Ciss, Coss, Crss - Capacitance - pF
10000
Single Pulse
PD (FET1) : PD (FET2) = 1:1
Mounted on FR-4 board of 25 cm2 x 1.6 mm
125˚C/W
100
Mounted on ceramic board of 50 cm2 x 1.1 mm
62.5˚C/W
10
1
0.1
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
Data Sheet G15629EJ1V0DS
5
µ PA1873
[MEMO]
6
Data Sheet G15629EJ1V0DS
µ PA1873
[MEMO]
Data Sheet G15629EJ1V0DS
7
µ PA1873
• The information in this document is current as of December, 2001. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
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