UPA610TA-T1-A

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA610TA P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING Package Drawings (unit: mm) DESCRIPTION 0.65 +0.1 –0.15 The µPA610TA is a switching device which can be driven suitable for use as a high-speed switching device in digital circuits. FEATURES 2.8 ±0.2 The µPA610TA has excellent switching characteristics, and is 0.32 +0.1 –0.05 0.16 +0.1 –0.06 1.5 directly by a 2.5 V power source. 0 to 0.1 • Can be driven by a 2.5 V power source. 0.95 0.95 1.9 • Low Gate Cut-off Voltage. 1.1 to 1.4 2.9 ±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage VDSS –30 V Gate to Source Voltage VGSS +20 V +0.1 +0.4 Note A Drain Current (DC) ID(DC) Drain Current (pulse) ID(pulse) Total Power Dissipation PT 300 (TOTAL) mW Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Note PW ≤ 10 µs, Duty Cycle ≤ 1 % 0.8 Equivalent Circuit Drain A Internal Diode Gate Gate Protect Diode Source Pin Connection (Top View) 6 1 5 2 4 3 1. Source 1 2. Source 2 3. Gate 2 4. Drain 2 5. Gate 1 6. Drain 1 Marking : JB The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Document No. D11199EJ1V0DS00 (1st edition) Date Published September 1996 P Printed in Japan © 1996 µPA610TA ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC 2 SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Drain Cut-off Current IDSS –1 µA VDS = –30 V, VGS = 0 Gate Leakage Current IGSS +10 µA VGS = +20 V, VDS = 0 Gate Cut-off Voltage VGS(off) –1.7 V VDS = –3 V, ID = –10 µA Forward Transfer Admittance | yfs | mS VDS = –3 V, ID = –10 mA Drain to Source On-State Resistance RDS(on)1 23 60 Ω VGS = –2.5 V, ID = –1 mA Drain to Source On-State Resistance RDS(on)2 11 23 Ω VGS = –4 V, ID = –10 mA Drain to Source On-State Resistance RDS(on)3 6 13 Ω VGS = –10 V, ID = –10 mA Input Capacitance Ciss 5 pF VDS = –3 V Output Capacitance Coss 15 pF VGS = 0 Reverse Transfer Capacitance Crss 1.3 pF f = 1 MHz Turn-on Delay Time td(on) 140 ns VDD = –3 V, ID = –10 mA Rise Time tr 330 ns VGS(on) = –4 V, RG = 10 Ω Turn-off Delay Time td(off) 220 ns RL = 300 Ω Fall Time tf 320 ns –1.0 –1.4 20 µPA610TA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 –100 80 –80 ID - Drain Current - mA dT - Derating Factor - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 60 40 20 VGS = –10 V VGS = –6 V –60 VGS = –4 V VGS = –3 V –40 –20 0 0 30 60 90 120 TA - Ambient Temperature - ˚C VGS = –2.5 V 0 0 150 –1 –2 –3 –4 VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT TRANSFER CHARACTERISTICS 1000 VDS = –3 V IyfsI - Forward Transfer Admittance - mS –100 ID - Drain Current - mA –10 TA = 125 °C TA = 75 °C –1 TA = 25 °C TA = –25 °C –0.1 –0.01 –0.001 0 –0.8 –1.6 –2.4 –3.2 VDS = –3 V 100 TA = –25 °C TA = 25 °C 10 TA = 75 °C TA = 125 °C 1 –0.1 –4.0 –1 VGS = –2.5 V 50 TA = 125 °C TA = 75 °C 30 20 TA = 25 °C 10 0 –0.1 TA = –25 °C –1 –10 –100 ID - Drain Current - mA –1000 RDS(on) - Drain to Source On-State Resistance - Ω RDS(on) - Drain to Source On-State Resistance - Ω DRAIN TO SOURCE ON–STATE RESISTANCE vs. DRAIN CURRENT 40 –10 –100 –1000 ID - Drain Current - mA VGS - Gate to Source Voltage - V 60 –5 DRAIN TO SOURCE ON–STATE RESISTANCE vs. DRAIN CURRENT 60 VGS = –4 V 50 40 30 TA = 125 °C TA = 75 °C 20 10 TA = 25 °C TA = –25 °C 0 –0.1 –1 –10 –100 ID - Drain Current - mA –1000 3 DRAIN TO SOURCE ON–STATE RESISTANCE vs. DRAIN CURRENT 60 VGS = –10 V 50 40 30 20 TA = 75 °C TA = 25 °C TA = –25 °C TA = 125 °C 10 0 –0.1 –1 –10 –100 ID - Drain Current - mA –1000 RDS(on) - Drain to Source On-State Resistance - Ω RDS(on) - Drain to Source On-Stage Resistance - Ω µPA610TA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 60 50 ID = –1 mA 40 ID = –10 mA ID = –100 mA 30 20 10 0 0 –2 –4 –6 –8 VGS - Gate to Source Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS 1000 VGS = 0 f = 1 MHz td(on),tr,td(off),tf - Switching Time - ns Ciss,Coss,Crss - Capacitance - pF 100 Coss 10 Ciss Crss 1 –1 –10 VDS - Drain to Source Voltage - V –100 SOURCE TO DRAIN DIODE FORWARD VOLTAGE ID - Reverse Drain Current - mA –1000 –100 –10 –1 –0.1 –0.2 –0.4 –0.6 –0.8 –1.0 VSD - Source to Drain Voltage - V 4 –10 –1.2 tr tf td(on) 100 td(off) VDD = –3 V VGS(on) = –4 V Rin = 10 Ω 10 –10 –100 ID - Drain Current - mA –1000 µPA610TA REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system TEI-1202 Quality grade on NEC semiconductor devices C11531E Semiconductor device mounting technology manual C10535E Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E 5 µPA610TA [MEMO] 6 µPA610TA [MEMO] 7 µPA610TA No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5 2