UPC358C(5)-A

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(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC358 LOW POWER DUAL OPERATIONAL AMPLIFIERS DESCRIPTION FEATURES The µPC358 is a dual operational amplifier which is • Internally frequency compensation designed to operate from a single power supply over a • Wide output voltage swing V– to V+ –1.5 V wide range of voltages. Operation from split power • Common mode input voltage range includes V– supplies is also possible and the power supply current • Wide supply voltage range drain is very low. Further advantage, the input common- 3 V to 30 V (Single) mode voltage range includes ground in the linear mode. ±1.5 V to ±15 V (Split) • Output short circuit protection EQUIVALENT CIRCUIT (1/2 Circuit) 6 µA PIN CONFIGURATION (Marking Side) V+ 100 µ A 6 µA OUT1 Q5 Q2 II 1 Q6 Q3 Q1 µ PC358C, 358G2 Q4 CC 2 Q11 Q8 7 OUT2 2 + – OUT Q10 V – + II1 Q7 RSC IN + 8 1 Q13 IN1 3 6 II2 V– 4 5 IN2 Q12 50 µ A Q9 V– ORDERING INFORMATION Part Number Package µPC358C 8-pin plastic DIP (7.62 mm (300)) µPC358G2 8-pin plastic SOP (5.72 mm (225)) µPC358G2(5) 8-pin plastic SOP (5.72 mm (225)) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G11765EJ6V0DS00 (6th edition) Date Published December 2007 N Printed in Japan The mark shows major revised points. 1997 µPC358 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Parameter Voltage between V+ and V– Note 1 Symbol Ratings Unit V+ – V– –0.3 to +32 V ±32 V Differential Input Voltage VID Input Voltage Note 2 VI V––0.3 Output Voltage Note 3 VO V––0.3 to V++0.3 V C Package Note 4 PT 350 mW G2 Package Note 5 440 mW Power Dissipation Output Short Circuit Duration Note 6 to V–+32 V Indefinite s Operating Ambient Temperature TA –20 to +80 °C Storage Temperature Tstg –55 to +125 °C Notes 1. Reverse connection of supply voltage can cause destruction. 2. The input voltage should be allowed to input without damage or destruction independent of the magnitude of V+. Either input signal should not be allowed to go negative by more than 0.3 V. The normal operation will establish when the both inputs are within the Common Mode Input Voltage Range of electrical characteristics. 3. This specification is the voltage which should be allowed to supply to the output terminal from external without damage or destructive. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The output voltage of normal operation will be the Output Voltage Swing of electrical characteristics. 4. Thermal derating factor is –5.0 mW/°C when operating ambient temperature is higher than 55 °C. 5. Thermal derating factor is –4.4 mW/°C when operating ambient temperature is higher than 25 °C. 6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note 4 and Note 5. RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage (Split) Supply Voltage (V– = GND) Symbol MIN. V± V+ TYP. MAX. Unit ±1.5 ±15 V +3 +30 V µPC358C, µPC358G2 ELECTRICAL CHARACTERISTICS (TA = 25 °C, V+ = +5 V, V– = GND) Parameter Symbol Conditions MIN. MAX. Unit Input Offset Voltage VIO ±2 ±7 mV Input Offset Current IIO ±5 ±50 nA IB 45 250 nA Input Bias Current Note 7 Large Signal Voltage Gain Supply Current Note 8 RS = 0 Ω TYP. AV RL ≥ 2 kΩ ICC RL = ∞, IO = 0 A 25 100 0.7 Common Mode Rejection Ratio CMR 65 70 Supply Voltage Rejection Ratio SVR 65 100 Output Voltage Swing Common Mode Input Voltage Range Output Current (SOURCE) Output Current (SINK) Channel Separation VO RL = 2 kΩ (Connect to GND) VICM IO SOURCE VIN+ = +1 V, VIN– IO SINK VIN– =0V = +1 V, VIN+ =0V VIN– = +1 V, VIN+ = 0 V, VO = 200 mV f = 1 kHz to 20 kHz V/mA 1.2 mA dB dB 0 V+ –1.5 V 0 V+ –1.5 V 20 40 mA 10 20 mA 12 50 µA 120 dB Notes 7. Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage. 8. This current flows irrespective of the existence of use. 2 Data Sheet G11765EJ6V0DS µPC358 µPC358G2(5) ELECTRICAL CHARACTERISTICS (TA = 25 °C, V+ = +5 V, V– = GND) Parameter Symbol Input Offset Voltage VIO Input Offset Current IIO Input Bias Current Note 7 Large Signal Voltage Gain Supply Current Note 8 RL ≥ 2 kΩ ICC RL = ∞, IO = 0 A CMR Supply Voltage Rejection Ratio SVR Common Mode Input Voltage Range Output Current (SOURCE) Output Current (SINK) VO 50 VICM IO SOURCE IO SINK VIN+ = +1 V, VIN– TYP. MAX. Unit ±2 ±3 mV ±5 ±50 nA 45 60 100 0.7 RL = 2 kΩ (Connect to GND) 65 70 65 100 nA V/mA 0.9 mA dB dB 0 V+ –1.5 V 0 V+ V –1.4 =0V 30 40 mA VIN– = +1 V, VIN+ = 0 V 15 20 mA VIN– 30 50 µA 120 dB VIN+ = +1 V, VO = 200 mV Channel Separation MIN. IB AV Common Mode Rejection Ratio Output Voltage Swing Conditions RS = 0 Ω = 0 V, f = 1 kHz to 20 kHz Notes 7. Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage. 8. This current flows irrespective of the existence of use. Data Sheet G11765EJ6V0DS 3 µPC358 TYPICAL PERFORMANCE CHARACTERISTICS (TA = 25 °C, TYP.) POWER DISSIPATION SUPPLY CURRENT 4 500 µ PC358G2 ICC - Supply Current - mA PT - Total Power Dissipation - mW 600 400 300 µPC358C 200 100 – + 2 TA = –20 °C 0 5 2 TA = 25 ˚C 1 VIO - Input Offset Voltage - mV VIO - Input Offset Voltage - mV 4 3 2 1 0 –1 –2 –3 INPUT BIAS CURRENT INPUT BIAS CURRENT 100 IB - Input Bias Current - nA IB - Input Bias Current - nA 100 4 + V =5V each 5 samples data –4 –50 0 50 100 TA - Operating Ambient Temperature - ˚C 10 20 30 40 V - Supply Voltage - V (V– = GND) + 75 T A = 25 °C 25 0 10 20 30 40 + – V - Supply Voltage - V (V = GND) INPUT OFFSET VOLTAGE INPUT OFFSET VOLTAGE 50 TA = 0 to 70 °C 1 3 0 A ICC 3 0 20 40 60 80 100 TA - Operating Ambient Temperature - °C 0 V+ 10 20 30 40 V+ - Supply Voltage - V (V– = GND) Data Sheet G11765EJ6V0DS 80 V+ = +15 V V– = GND 60 40 20 0 –50 0 50 100 TA - Operating Ambient Temperature - ˚C µPC358 OPEN LOOP FREQUENCY RESPONSE 140 10 MΩ – + 60 Aυ - Open Loop Voltage Gain - dB IO SHORT - Output Short Circuit Current - mA OUTPUT SHORT CIRCUIT CURRENT 70 IO SHORT 50 40 30 –20 40 0 20 60 TA - Ambient Temperature - ˚C 120 0.1 µF VIN 100 + 60 + V = 30 V 40 V+ = 10 to 15 V 20 1 20 VO - Output Voltage Swing -Vp-p AV - Open Loop Voltage Gain - dB 160 RL = 20 kΩ 120 RL = 2 kΩ 80 40 15 VIN +7 V + VO 2 kΩ 5 3 5 10 k 30 50 100 k 300 500 1 M f - Frequency - Hz VOLTAGE FOLLOWER PULSE RESPONSE COMMON MODE REJECTION RATIO 4 VO VIN Input Voltage - V Output Voltage - V 120 100 80 60 40 20 0 100 +15 V – 10 0 1k 10 20 30 40 V - Supply Voltage - V (V– = GND) 100 kΩ 1 kΩ + CMR - Common Mode Rejection Ratio - dB 10 100 1 k 10 k 100 k 1 M 10 M f - Frequency - Hz LARGE SIGNAL FREQUENCY RESPONSE OPEN LOOP VOLTAGE GAIN 0 VO V+/2 80 0 80 + V – 1k 10 k 100 k f - Frequency - Hz 1M Data Sheet G11765EJ6V0DS RL ≥ 2 kΩ V+ = 15 V 3 2 1 0 3 2 1 0 20 40 t - Time - µs 60 80 5 µPC358 SLEW RATE SR– 0.3 SR - Slew Rate - V/µ s SR+ 0.2 0.1 ± V = ±15 V VO = ±10 V 0 –50 0 50 100 TA - Operating Ambient Temperature - ˚C OUTPUT SINK CURRENT LIMIT 100 VO - Output Voltage - V 50 30 20 10 5 3 2 1 0.5 0.3 0.2 V+ V+/2 0.1 0.05 0.03 0.02 0.01 0.01 – + 0.03 0.05 0.1 0.3 0.5 1 2 3 5 V+ = +15 V IO SINK VO 10 20 30 50 100 10 20 30 50 100 IO SINK - Output Sink Current - mA OUTPUT SOURCE CURRENT LIMIT 5 V+ = +15 V ∆VO - Output Voltage to V+ - V V+ 4 V+/2 3 ∆VO + – IO SOURCE 2 1 0 0.01 0.03 0.05 0.1 0.3 0.5 1 2 3 5 IO SOURSE - Output Source Current - mA 6 Data Sheet G11765EJ6V0DS µPC358 PACKAGE DRAWINGS 8-PIN PLASTIC DIP (7.62mm(300)) 8 5 1 4 A K J L P I C H G B M R F D N M NOTES 1. Each lead centerline is located within 0.25 mm of its true position (T.P.) at maximum material condition. 2. ltem "K" to center of leads when formed parallel. ITEM MILLIMETERS A B 10.16 MAX. 1.27 MAX. C 2.54 (T.P.) D 0.50±0.10 F 1.4 MIN. G H 3.2±0.3 0.51 MIN. I J 4.31 MAX. 5.08 MAX. K 7.62 (T.P.) L 6.4 M 0.25 +0.10 −0.05 N 0.25 P 0.9 MIN. R 0∼15° P8C-100-300B,C-2 Data Sheet G11765EJ6V0DS 7 µPC358 8-PIN PLASTIC SOP (5.72 mm (225)) 8 5 detail of lead end P 4 1 A H F I G J S B C D M L N K S M E NOTE Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition. ITEM MILLIMETERS A 5.2 +0.17 −0.20 B 0.78 MAX. C 1.27 (T.P.) D 0.42 +0.08 −0.07 E 0.1±0.1 F 1.59±0.21 G 1.49 H 6.5±0.3 I 4.4±0.15 J 1.1±0.2 K 0.17 +0.08 −0.07 L 0.6±0.2 M 0.12 N 0.10 P 3° +7° −3° S8GM-50-225B-6 8 Data Sheet G11765EJ6V0DS µPC358 RECOMMENDED SOLDERING CONDITIONS The µPC358 should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Type of Surface Mount Device µPC358G2: 8-pin plastic SOP (5.72 mm (225)) Process Conditions Symbol Peak temperature: 235 °C or below (Package surface temperature), Reflow time: 30 seconds or less (at 210 °C or higher), Maximum number of reflow processes: 3 time. IR35-00-3 Vapor phase soldering Peak temperature: 215 °C or below (Package surface temperature), Reflow time: 40 seconds or less (at 200 °C or higher), Maximum number of reflow processes: 3 time. VP15-00-3 Wave soldering Solder temperature: 260 °C or below, Flow time: 10 seconds or less, Maximum number of flow processes: 1 time, Pre-heating temperature: 120 °C or below (Package surface temperature). WS60-00-1 Partial heating method Pin temperature: 350 °C or below, Heat time: 3 seconds or less (Per each side of the device). Infrared ray reflow P350 Caution Apply only one kind of soldering condition to a device, except for “partial heating method”, or the device will be damaged by heat stress. Types of Through-hole Device µPC358C: 8-pin plastic DIP (7.62 mm (300)) Process Wave soldering (only to leads) Partial heating method Conditions Solder temperature: 260 °C or below, Flow time: 10 seconds or less. Pin temperature: 300 °C or below, Heat time: 3 seconds or less (per each lead). Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure that the package body does not get jet soldered. Data Sheet G11765EJ6V0DS 9 µPC358 REFERENCE DOCUMENTS QUALITY GRADES ON NEC SEMICONDUCTOR DEVICES C11531E SEMICONDUCTOR DEVICE MOUNT MANUAL http://www.necel.com/pkg/en/mount/index.html NEC SEMICONDUCTOR DEVICE RELIABILITY/ IEI-1212 QUALITY CONTROL SYSTEM - STANDARD LINEAR IC 10 Data Sheet G11765EJ6V0DS µPC358 • The information in this document is current as of December, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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