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DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC4093
J-FET INPUT LOW-OFFSET OPERATIONAL AMPLIFIER
The µPC4093 operational amplifier is a high-speed version of the µPC4091. NEC's unique high-speed PNP
transistor (fT = 300 MHz) in the output stage realizes a high slew rate of 25 V/µs under voltage-follower conditions
without an oscillation problem. Zener-zap resistor trimming in the input stage produces excellent offset voltage and
temperature drift characteristics.
With AC performance characteristics that are two times better than conventional bi-FET operation amplifiers, the
µPC4093 is ideal for fast integrators, active filters, and other high-speed circuit applications.
FEATURES
• Stable operation with 220 pF capacitive load
• Low noise : en = 19 nV/ √Hz (TYP.)
• Low input offset voltage and offset voltage null
• Output short circuit protection
capability
• High input impedance ... J-FET Input Stage
±2.5 mV (MAX.)
• Internal frequency compensation
±7 µV/°C (TYP.) temperature drift
• High slew rate: 25 V/µs (TYP.)
• Very low input bias and offset currents
ORDERING INFORMATION
Part Number
Package
µPC4093C
8-pin plastic DIP (300 mil)
µPC4093G2
8-pin plastic SOP (225 mil)
EQUIVALENT CIRCUIT
PIN CONFIGURATION
(Top View)
V+
(7)
µ PC4093C, 4093G2
OFFSET
1
NULL
Q9
Q6
(2)
II
Q1
Q2
Q3
Q4
TRIMMED
(5)
OFFSET
NULL
D1
II
2
IN
3
V−
4
(6)
C1
Q5
OFFSET
NULL
OUT
Q7
IN
(3)
(1)
8 NC
Q10
HIGH SPEED
PNP
7 V+
− +
6 OUT
5
OFFSET
NULL
Q8
(4)
Remark NC : No Connection
V–
The information in this document is subject to change without notice.
Document No. G13906EJ1V0DS00 (1st edition)
Date Published December 1998 N CP(K)
Printed in Japan
©
1998
µPC4093
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Parameter
+
Voltage between V and V
–Note 1
Symbol
Ratings
Unit
–
–0.3 to +36
V
±30
V
+
V –V
Differential Input Voltage
VID
Note 2
Input Voltage
Output Voltage
Note 4
C
Power Dissipation
Package
+
–
+
V –0.3 to V +0.3
VI
Note 3
–
V
VO
V –0.3 to V +0.3
V
PT
350
mW
440
mW
Indefinite
sec
Note 5
G2 Package
Note 6
Output Short Circuit Duration
Operating Ambient Temperature
TA
–20 to +80
°C
Storage Temperature
Tstg
–55 to +125
°C
Notes 1. Reverse connection of supply voltage can cause destruction.
2. The input voltage should be allowed to input without damage or destruction. Even during the transition
period of supply voltage, power on/off etc., this specification should be kept. The normal operation will
establish when the both inputs are within the Common Mode Input Voltage Range of electrical
characteristics.
3. This specification is the voltage which should be allowed to supply to the output terminal from external
without damage or destructive. Even during the transition period of supply voltage, power on/off etc., this
specification should be kept. The output voltage of normal operation will be the Output Voltage Swing of
electrical characteristics.
4. Thermal derating factor is –5.0 mV/°C when operating ambient temperature is higher than 55 °C.
5. Thermal derating factor is –4.4 mV/°C when operating ambient temperature is higher than 25 °C.
6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note 4
and Note 5.
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
±16
V
Supply Voltage
V±
Output Current
IO
±10
mA
Capacitive Load (AV = +1, Rf = 0 Ω)
CL
220
pF
±5
OFFSET VOLTAGE NULL CIRCUIT
2
Remark The OFFSET NULL pins should be left
–
6
3
5
+
1
as shown in the left figure.
Don't
connect to any lines other than V–,
10 kΩ
VR1
V–
2
open or connected to V– via a resistor
otherwise mulfunction, degradation, or
failure may occur.
µPC4093
ELECTRICAL CHARACTERISTICS (TA = 25 °C, V± = ±15 V)
Parameter
Input Offset Voltage
Input Offset Current
Input Bias Current
Note 7
Note 7
Symbol
TYP.
MAX.
Unit
±1
±2.5
mV
IIO
±25
±100
pA
IB
50
200
pA
3.4
mA
VIO
Conditions
MIN.
RS ≤ 50 Ω
Large Signal Voltage Gain
AV
RL ≥ 2 kΩ , VO = ±10 V
Supply Current
ICC
IO = 0 A
Common Mode Rejection Ratio
CMR
70
100
dB
Supply Voltage Rejection Ratio
SVR
70
100
dB
Output Voltage Swing
Vom
±12
+14.0
V
RL ≥ 10 kΩ
25000
200000
2.5
–13.3
RL ≥ 2 kΩ
±10
+13.5
V
–12.8
Common Model Input Voltage Range
±11
VICM
+14
V
–12
V/µs
6
MHz
19
nV/√Hz
SR
Unity Gain Frequency
funity
Input Equivalent Noise Voltage Density
en
RS = 100 Ω, f = 1 kHz
Input Offset Voltage
VIO
RS ≤ 50 Ω, TA = –20 to +70 °C
Average VIO Temperature Drift
∆VIO/∆T
TA = –20 to +70 °C
IIO
TA = –20 to +70 °C
±2
nA
IB
TA = –20 to +70 °C
7
nA
Input Offset Current
Input Bias Current
Note 7
Note 7
AV = 1
25
Slew Rate
±5
mV
µV/°C
±7
Notes 7. Input bias currents flow into IC. Because each currents are gate leak current of P-channel J-FET on input
stage. And that are temperature sensitive. Short time measuring method is recommendable to maintain
the junction temperature close to the operating ambient temperature.
3
µPC4093
TYPICAL PERFORMANCE CHARACTERISTICS (TA = 25 °C, TYP.)
POWER DISSIPATION
OPEN LOOP FREQUENCY RESPONSE
120
500
400
AV - Open Loop Voltage Gain - dB
PT - Total Power Dissipation - mW
600
µ PC4093G2
200 °C/W
µ PC4093C
300
227 °C/W
200
100
20
0
40
60
80
V± = ±15 V
RL = 2 kΩ
100
80
60
40
20
0
100
1
TA - Operating Ambient Temperature - °C
10
100
INPUT OFFSET VOLTAGE
5
1k
10 k 100 k 1 M
INPUT BIAS CURRENT
100
V± = ±15 V
V± = ±15 V
IB - Input Bias Current - nA
4
VIO - Input Offset Voltage - mV
10 M
f - Frequency - Hz
3
2
1
0
−1
−2
10
1.0
0.1
−3
−4
−5
−40
0.01
−20
−20
0
20
40
60
0
20
40
60
80
TA - Operating Ambient Temperature - °C
80
TA - Operating Ambient Temperature - °C
LARGE SIGNAL FREQUENCY RESPONSE
OUTPUT VOLTAGE SWING
40
RL = 10 kΩ
V± = ±15 V
20
V± = ±10 V
10
V± = ±5 V
0
100
1k
10 k
100 k
f - Frequency - Hz
4
RL = 10 kΩ
Vom - Output Voltage Swing - Vp-p
Vom - Output Voltage Swing - Vp-p
30
1M
10 M
30
20
10
±10
0
V±
- Supply Voltage - V
±20
µPC4093
OUTPUT SOURCE CURRENT LIMIT
OUTPUT SINK CURRENT LIMIT
−15
V± = ±15 V
+10
VO− - Output Voltage - V
VO+ - Output Voltage - V
+15
TA = 70 °C
25 °C
−20 °C
+5
0
10
20
−10
−20 °C
−5
10
20
SUPPLY CURRENT
INPUT EQUIVALENT NOISE VOLTAGE DENSITY
3.5
en - Input Equivalent Noise
Voltage Density
- nV/ Hz
50
3.0
2.5
2.0
1.5
1.0
0.5
±5
0
V±
±10
30
IO SINK - Output Sink Current - mA
IO SOURCE - Output Source Current - mA
ICC - Supply Current - mA
TA = 70 °C
25 °C
0
30
V± = ±15 V
±15
±20
V± = ±15 V
RS = 100 Ω
40
30
20
10
0
10
100
1k
10k
100k
f - Frequency - Hz
- Supply Voltage - V
VI - Input Voltage - V
VO - Output Voltage - V
VOLTAGE FOLLOWER PULSE RESPONSE
AV = +1
RL = 10 kΩ
CL = 100 pF
±
V = ±15 V
5
0
−5
5
0
−5
0
0.5
1
1.5
2
5
µPC4093
PACKAGE DRAWINGS
8PIN PLASTIC DIP (300 mil)
8
5
1
4
A
K
I
L
P
J
C
H
G
B
M
R
F
D
N
M
NOTES
1) Each lead centerline is located within 0.25 mm (0.01 inch) of
its true position (T.P.) at maximum material condition.
2) ltem "K" to center of leads when formed parallel.
ITEM
MILLIMETERS
INCHES
A
B
10.16 MAX.
1.27 MAX.
0.400 MAX.
0.050 MAX.
C
2.54 (T.P.)
0.100 (T.P.)
D
0.50±0.10
0.020 +0.004
–0.005
F
1.4 MIN.
0.055 MIN.
G
3.2±0.3
0.126±0.012
H
0.51 MIN.
0.020 MIN.
I
J
4.31 MAX.
5.08 MAX.
0.170 MAX.
0.200 MAX.
K
7.62 (T.P.)
0.300 (T.P.)
L
6.4
0.252
M
0.25 +0.10
–0.05
0.010 +0.004
–0.003
N
0.25
0.01
P
0.9 MIN.
0.035 MIN.
R
0~15°
0~15°
P8C-100-300B,C-1
6
µPC4093
8 PIN PLASTIC SOP (225 mil)
8
5
detail of lead end
P
4
1
A
H
F
I
G
J
S
B
C
E
D
M
L
N
K
S
M
NOTE
Each lead centerline is located within 0.12 mm of
its true position (T.P.) at maximum material condition.
ITEM
MILLIMETERS
A
5.2 +0.17
−0.20
B
0.78 MAX.
C
1.27 (T.P.)
D
0.42 +0.08
−0.07
E
F
0.1±0.1
1.59±0.21
G
1.49
H
6.5±0.3
I
4.4±0.15
J
1.1±0.2
K
0.17 +0.08
−0.07
L
M
0.6±0.2
0.12
N
0.10
P
+7°
3° −3°
S8GM-50-225B-5
7
µPC4093
RECOMMENDED SOLDERING CONDITIONS
When soldering this product, it is highly recommended to observe the conditions as shown below.
If other
soldering processes are used, or if the soldering is performed under different conditions, please make sure to consult
with our sales offices.
For more details, refer to our document "SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY
MANUAL"(C10535E).
Type of Surface Mount Device
µPC4093G2: 8-pin plastic SOP (225 mil)
Process
Infrared Ray Reflow
Conditions
Symbol
Peak temperature: 230 °C or below (Package surface temperature),
IR30-00-1
Reflow time: 30 seconds or less (at 210 °C or higher),
Maximum number of reflow processes: 1 time.
Vapor Phase Soldering
Peak temperature: 215 °C or below (Package surface temperature),
VP15-00-1
Reflow time: 40 seconds or less (at 200 °C or higher),
Maximum number of reflow processes: 1 time.
Wave Soldering
Solder temperature: 260 °C or below, Flow time: 10 seconds or less,
WS60-00-1
Maximum number of flow processes: 1 time,
Pre-heating temperature: 120 °C or below (Package surface temperature).
Partial Heating Method
Pin temperature: 300 °C or below,
–
Heat time: 3 seconds or less (Per each side of the device).
Caution Apply only one kind of soldering condition to a device, except for "partial heating method", or the
device will be damaged by heat stress.
Type of Through-hole Device
µPC4093C: 8-pin plastic DIP (300 mil)
Process
Conditions
Wave Soldering
Solder temperature: 260 °C or below,
(only to leads)
Flow time: 10 seconds or less.
Partial Heating Method
Pin temperature: 300 °C or below,
Heat time: 3 seconds or less (per each lead).
Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure
that the package body does not get jet soldered.
8
µPC4093
REFERENCE DOCUMENTS
QUALITY GRADES ON NEC SEMICONDUCTOR DEVICES
C11531E
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL
C10535E
NEC IC PACKAGE MANUAL (CD-ROM)
C13388E
GUIDE TO QUALITY ASSURANCE FOR SEMICONDUCTOR DEVICES
MEI-1202
SEMICONDUCTORS SELECTION GUIDE
X10679E
NEC SEMICONDUCTOR DEVICE RELIABILITY/QUALITY CONTROL SYSTEM
IEI-1212
(STANDARD LINEAR IC)
9
µPC4093
[MEMO]
10
µPC4093
[MEMO]
11
µPC4093
[MEMO]
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
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