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DATA SHEET
MOS INTEGRATED CIRCUIT
μ PD166007
SINGLE N-CHANNEL HIGH SIDE INTELLIGENT POWER DEVICE
PACKAGE DRAWING (unit: mm)
The μ PD166007 device is an N-channel high-side switch with charge
4.0 MIN (4.4 TYP)
sense and embedded protection functions.
• Built-in charge pump
1
• Low on-state resistance
0.5±0.1
2
3
4
5
0 to 0.25
0.6±0.1
1.14
GAUGE PLANE
• Over-temperature protection
0.5±0.1
0.508
- Shutdown with auto-restart on cooling
SEATING PLANE
- Shutdown by short-circuit detection
1.52±0.12
0.8
• Short-circuit protection
2.3±0.1
6
6.1±0.2
FEATURES
1.0 TYP
6.5±0.2
5.0 TYP
4.3 MIN
pump, current controlled input, diagnostic feedback with load current
10.3 MAX (9.8 TYP)
GENERAL DESCRIPTION
• Small multi-chip package: JEDEC 5-pin TO-252
NOTE
1.
(MSL: 3, profile acc. J-STD-20C)
No Plating area
• Built-in diagnostic function
- Proportional load current sensing
- Defined fault signal in case of thermal shutdown and/or short circuit shutdown
ORDERING INFORMATION
Part Number
μ PD166007T1F-E1-AY
Note
Lead plating
Packing
Package
Sn
Tape 2500 p/reel
5-pin TO-252 (MP-3ZK)
Note Pb-free (This product does not contain Pb in the external electrode.)
QUALITY GRADE
Part Number
Quality Grade
μ PD166007T1F-E1-AY
Special
Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E) published by
NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
APPLICATION
• Light bulb (to 55 W) switching
• Switching of all types of 14 V DC grounded loads, such as inductor, resistor and capacitor
• Replacement for fuse and relay
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. S18529EJ3V0DS00 (3rd edition)
Date Published December 2008 NS
Printed in Japan
The mark shows major revised points.
The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
2006
μ PD166007
BLOCK DIAGRAM
3 & Tab
ICC
VCC
VCC - VIN
IIN
IN
2
VIN
Internal
power supply
Charge pump
Power supply
voltage sense
Current
detector
Dynamic
clamp
Output voltage
sense
Current sense
ESD
protection
Control logic
VCC
Von
ESD
protection
Fault signal
output
VOUT
4
Tab
Terminal Name
1
OUT
Output to load: pin 1 and 5 must be externally shorted.
2
IN
Input; activates the power switch, if shorted to ground.
3&Tab
VCC
Supply Voltage: tab and pin 3 are internally shorted.
OUT
IS
VIS
Pin No.
5
Load
IIS
RIS
PIN CONFIGURATION
IS
IL
OUT
Temperature
Sensor
4
1&5
Function
Sense Output: diagnostic feedback
1 2 3 4 5
Note
Output to load: pin 1 and 5 must be externally shorted.
Note If current sense and diagnostic features are not used, IS terminal has to be connected to GND via resistor.
2
Data Sheet S18529EJ3V0DS00
μ PD166007
ABSOLUTE MAXIMUM RATING (Ta = 25°C, unless otherwise specified)
Parameter
Symbol
VCC voltage
VCC1
VCC voltage for full short circuit
VCC2
Test Conditions
Rating
Unit
28
V
18
V
36
V
30
A
Self Limited
A
59
W
protection
VCC voltage (Load Dump)
VCC3
RI = 1 Ω, RL = 1.5 Ω, td = 400 ms,
RIS = 1 kΩ, IN = low or high
Load current
IL
DC, TC = 25°C
Load current (short circuit
IL(SC)
current)
Power dissipation
PD
TC = 25°C
Channel temperature
Tch
−40 to +150
°C
Storage temperature
Tstg
−55 to +150
°C
Electric discharge capability
VESD
IN, IS
±2.0
kV
OUT
±4.0
kV
R = 1.5 kΩ, C = 100pF
(Human Body Model)
Voltage of IN pin (DC)
VIN
VCC = 14 V
VCC+14 V, VCC–28 V
V
Voltage of IS pin (DC)
VIS
VCC = 14 V
VCC+14 V, VCC–28 V
V
RECOMMENDED OPERATING CONDITIONS
Parameter
Power supply voltage
Symbol
VCC
Test Conditions
Tch = −40 to 150°C
Min.
Typ.
Max.
Unit
18
V
Typ.
Max.
Unit
45
55
°C/W
Typ.
Max.
Unit
0.7
2.2
mA
10
μA
8
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance
Symbol
Rth(ch-a)
Test Conditions
Min.
Device on 50 mm x 50 mm x 1.5 mm
epoxy PCB FR4 with 6 cm of 70 μm
2
copper area
ELECTRICAL CHARACTERISTICS (VCC = 12 V, Tch = 25°C, unless otherwise specified)
Parameter
Required current capability of
Symbol
IIH
Test Conditions
Tch = −40 to 150°C
Input switch
Input current for turn-off
IIL
Standby Current
ICC(off)
On State Resistance
Ron
Iin = 0 A
IL = 7.5 A
Min.
Tch = 25°C
4
6
μA
Tch = −40 to 150°C
4
15
μA
Tch = 25°C
8
10
Tch = 150°C
14
18
200
400
μs
mΩ
Ton
RL = 2.2 Ω,
Turn Off Time
Toff
Tch = −40 to 150°C
250
700
μs
Rise time
Tr
refer to page 15
150
300
μs
Fall time
Tf
100
500
μs
Slew rate on
dV/dton
0.2
0.6
V/μs
0.2
0.5
V/μs
Turn On Time
25 to 50% VOUT, RL = 2.2 Ω,
Tch = −40 to 150°C, refer to page 15
Slew rate off
-dV/dtoff
50 to 25% VOUT, RL = 2.2 Ω,
Tch = −40 to 150°C, refer to page 15
Data Sheet S18529EJ3V0DS00
3
μ PD166007
PROTECTION FUNCTIONS (VCC = 12 V, Tch = 25°C, unless otherwise specified)
Parameter
Output voltage drop at reverse
Note
battery condition
Short circuit detection current
Symbol
Typ.
Max.
Unit
Tch = 25°C
0.8
0.84
V
Note
Tch = 150°C
0.6
0.63
V
VCC − VIN = 6 V,
Tch = −40°C
50
120
A
Von = 3 V
Tch = 25°C
50
Tch = 150°C
IL6, 6(SC)
Note
IL12, 6(SC)
Note
IL12, 12(SC)
Tch = −40°C
35
Tch = 25°C
35
VCC − VIN = 12 V,
Tch = −40°C
Von = 3 V
Tch = 25°C
76
105
Tch = 150°C
50
95
IL18, 3(SC)
90
Von = 6 V
Tch = 25°C
85
IL18, 6(SC)
Tch = −40°C
55
Von = 12 V
Tch = 25°C
50
Note
VCC − VIN = 18 V,
Tch = −40°C
130
Tch = 25°C
125
IL18, 18(SC)
60
VCC − VIN = 18 V,
Tch = −40°C
110
Tch = 25°C
110
VCC − VIN = 18 V,
Tch = −40°C
75
Tch = 25°C
70
170
120
65
VCC − VIN = 18 V,
Tch = −40°C
50
Von = 18 V
Tch = 25°C
50
Tch = 150°C
200
100
Von = 12 V
30
120
110
Von = 6 V
50
160
45
Von = 3 V
Tch = 150°C
Note
10
180
80
VCC − VIN = 12 V,
Tch = 150°C
IL18, 12(SC)
40
110
35
110
Tch = −40°C
Tch = 150°C
Note
10
VCC − VIN = 12 V,
Tch = 150°C
Note
45
VCC − VIN = 6 V,
Tch = 150°C
Note
20
Von = 6 V
Tch = 150°C
IL12, 3(SC)
Output clamp voltage
Min.
VCC = −12 V, IL = −7.5 A, RIS = 1 kΩ
Vds(rev)
IL6, 3(SC)
Test Conditions
90
5
45
30
34
40
V
Von(CL)
IL = 40 mA
Over load detection voltage
VON(OvL)
Tch = −40 to 150°C
0.65
1
1.45
V
Turn-on check delay after
td(OC)
Tch = −40 to 150°C
0.8
1.9
3.5
ms
150
175
°C
10
°C
(inductive load switch off)
input current positive slope
Thermal shutdown
Tth
temperature
Thermal hysteresis
ΔTth
Note Not subject to production test, specified by design.
4
Data Sheet S18529EJ3V0DS00
μ PD166007
DIAGNOSTIC CHARACTERISTICS (VCC = 12 V, Tch = 25°C, unless otherwise specified)
Parameter
Current sense ratio
Symbol
KILIS
Test Conditions
Min.
Typ.
Max.
Tch = −40°C
8300
9350
11000
Tch = 25°C
8300
9400
10600
Tch = 150°C
8300
9450
10000
Tch = −40°C
7500
9400
11400
Tch = 25°C
8000
9500
10800
Tch = 150°C
8200
9550
10200
Tch = −40°C
6100
9600
14200
Tch = 25°C
6500
9600
12800
Tch = 150°C
7600
9600
11500
Unit
KILIS = IL/IIS
VIS < VOUT − 6 V, IIS < IIS,lim
IL = 30 A
IL = 7.5 A
IL = 2.5 A
Sense current offset current
IIS,offset
VIN = 0 V, IL = 0 A
Sense current under fault
IIS,fault
Under fault conditions
condition
0
8 V < VCC − VIS < 12 V,
60
μA
3.5
6.0
12.0
mA
3.5
7.0
12.0
mA
2
6
μs
0.1
0.5
μA
250
1000
μs
50
100
μs
Tch = −40 to 150°C
Sense current saturation
IIS,lim
current
Vis < Vout − 6 V,
Tch = −40 to 150°C
Fault sense signal delay after
Note
short circuit detection
tsdelay(fault)
Tch = −40 to 150°C
Sense current leakage current
IIS(LL)
IIN = 0 A
Current sense settling time
tson(IS)
Tch = −40 to 150°C
IL = 0 A
20 A
after input current positive
Note
slope
Current sense settling time
Note
during on condition
IL = 10 A
Tsic(IS)
20 A
Note Not subject to production test, specified by design.
Data Sheet S18529EJ3V0DS00
5
μ PD166007
FEATURES DESCLIPTION
Driver Circuit (On-Off Control)
The high-side output is turned on, if the input pin is shorted to ground. The input current is below IIH. The high-side
output is turned off, if the input pin is open or the input current is below IIL. Rin0 is 130 Ω typ. ESD protection diode:
46 V typ.
VCC
IIN
0
VZ,IN
VOUT
IN
VCC
OFF
ON
OFF
Rin0
ZD
Logic
IIN
ON
0
t
Switching a resistive load
Switching lamps
IIN
IIN
0
0
IL
IL
0
0
VOUT
VOUT
VCC
0
0
IIS
IIS
0
6
t
0
Data Sheet S18529EJ3V0DS00
IIS,lim
t
μ PD166007
Switching an inductive load
IIN
VCC
0
IL
IS
0
VOUT
SW1
ESD
Ris
Control
Logic
0
VCC
OUT
Von(CL)
IIS
t
0
Dynamic clamp operation at inductive load switch off
The dynamic clamp circuit works only when the inductive load is switched off. When the inductive load is switched off,
the voltage of OUT falls below 0 V. The gate voltage of SW1 is then nearly equal to GND because the IS terminal is
connected to GND via an external resister. Next, the voltage at the source of SW1 (= gate of output MOS) falls below
the GND voltage. SW1 is turned on, and the clamp diode is connected to the gate of the output MOS, activating the
dynamic clamp circuit.
When the over-voltage is applied to VCC, the gate voltage and source voltage of SW1 are both nearly equal to GND.
SW1 is not turned on, the clamp diode is not connected to the gate of the output MOS, and the dynamic clamp circuit is
not activated.
Data Sheet S18529EJ3V0DS00
7
μ PD166007
Short circuit protection
Case 1: IN pin is shorted to ground in an overload condition, which includes a short circuit condition.
The device shuts down automatically when either or both of following conditions (a, b) is detected. The
sense current is fixed at IIS,fault. Shutdown is latched until the next reset via input.
(a) IL > IL(sc)
(b) Von > Von(OvL) after td(OC)
Case1-(a) IL > IL(sc)
IIN
Short circuit detection
(Evaluation circuit)
0
IL(SC)
IL
VCC
0
VOUT/VCC
IN
VCC
VBAT
Von
OUT
IIN
VBAT
VIN
VON
IIS
IS
VIS
VOUT
RIS IL
RL
VOUT
0
: Cable impedance
tsdelay(fault)
IIS
IIS,fault
t
0
tsdelay(fault): Fault sense signal delay after short circuit detection
IL(SC): Short circuit detection current
Depending on the external impedance
Typical Short circuit detection current characteristics
The short circuit detection current changes according VCC voltage and Von voltage for the purpose of to be strength
of the robustness under short circuit condition.
IL(SC) vs. VCC − VIN
150
IL(SC) [A]
Von=3V
160
120
140
120
IL(SC) [A]
Von=6V
100
80
VCC-VIN=18V
60
40
VCC-VIN=12V
20
Von=12V
60
30
VCC-VIN=6V
0
Von [V]
0
8
90
5
10
15
20
0
5
Data Sheet S18529EJ3V0DS00
10
VCC-VIN [V]
15
20
μ PD166007
Case1-(b) Von > Von(OvL) after td(OC)
Short circuit detection
IIN
(Evaluation circuit)
0
IL
IL(SC)
VCC
0
IIN
VOUT/VCC
IN
VCC
Von(OvL)
VIN
IS
VIS
IIS
VOUT
RIS IL
VON
VOUT
VBAT
VBAT
Von
OUT
RL
0
: Cable impedance
td(oc)
IIS
td(oc): Turn-on check delay after input current positive slope
IIS,fault
t
0
Depending on the external impedance
Data Sheet S18529EJ3V0DS00
9
μ PD166007
Case 2: Short circuit during on-condition
The device shuts down automatically when either or both of following conditions (a, b) is detected. The
sense current is fixed at IIS,fault. Shutdown is latched until the next reset via input.
(a) IL > IL(sc)
(b) Von > Von(OvL) after td(oc)
Case2-(a) IL > IL(sc)
IIN
Short circuit detection
(Evaluation circuit)
0
IL
IL(SC)
VCC
0
VOUT
IN
VCC
VBAT
Von
OUT
IIN
VIN
IS
VIS
IIS
VOUT
RIS IL
RL
0
: Cable impedance
tsdelay(fault)
IIS
tsdelay(fault): Fault sense signal delay after short circuit detection
IIS,fault
t
0
IL(SC): short circuit detection current
Depending on the external impedance
10
Data Sheet S18529EJ3V0DS00
μ PD166007
Case2-(b) Von > Von(OvL) after td(OC)
IIN
Short circuit detection
0
IL(SC)
IL
0
VOUT/VCC
VCC
VBAT
Von(OvL)
VOUT
0
IIS
tsdelay(fault)
td(oc)
IIS,fault
t
0
Depending on the external impedance
td(oc): Turn-on check delay after input current positive slope
tsdelay(fault): Fault sense signal delay after short circuit detection
IL(SC): Short circuit detection current
(Evaluation circuit)
VCC
IIN
IN
VBAT
Von
OUT
VIN
IS
VIS
IIS
VOUT
RIS IL
RL
: Cable impedance
Data Sheet S18529EJ3V0DS00
11
μ PD166007
Over-temperature protection
The output is switched off if over-temperature is detected. The device switches on again after it cools down.
IIN
0
Tch
Tth
ΔTth
VOUT
0
IIS
IIS,fault
t
0
Power dissipation under reverse battery condition
In the case of a reverse battery condition, the intrinsic body diode causes power dissipation. Additional power is
dissipated by the internal resister. The following is the formula for estimation of total power dissipation Pd(rev) in a
reverse battery condition.
Pd(rev) = Vds(rev) x IL + (VCC – Vf – Iin(rev) x Rin) x Iin(rev) + (VCC − Iis(rev) x Ris) x Iis(rev)
Iin(rev) = (VCC − ( Vf +Vf,IN)) / (Rin0 + Rin)
Iis(rev) = (VCC − Vf,IS) / (Ris0 + Ris)
Vf,IN: Forward voltage of Vz,IN
Vf,IS: Forward voltage of Vz,IS
Vf: Forward voltage of parasitic diode of external input switch
The reverse current through the intrinsic body diode has to be limited by the connected load. The current through
sense pin IN is limited by Rin0 130 Ω typ.. (Please refer to Current sense output). The current through input pin IS is
limited by Ris0 130 Ω typ. and external Ris. (Please refer to Driver Circuit (On-Off Control)).
12
Data Sheet S18529EJ3V0DS00
μ PD166007
Device behavior at low voltage condition
If the voltage supply goes down, the device cannot keep a fully ON state under 4.6 V(typ.), and Von voltage is going
to increase. Then, if Von voltage goes over Von(OvL), the device shuts down the output. Shutdown is latched until the
next reset via input. Shutdown does not work during td(oc) after input is active. VON(OvL) goes down under 4.6 V.
IIN
0
IL
0
VOUT/Vcc
Vcc
VBAT
VOUT
Von(OvL)
0
t
td(oc)
Over load detection voltage characteristics under low voltage supply condition
Over load detection voltage Von(OvL) [V]
1.2
1
0.8
0.6
0.4
0.2
0
0
5
10
15
20
Voltage supply Vcc - VIN [V]
Data Sheet S18529EJ3V0DS00
13
μ PD166007
Current sense output
VCC
Ris0 is 130 Ω typ. Vz,IS = 46 V (typ.), RIS = 1 kΩ nominal.
VZ,IS
IS can be only driven by the internal circuit as long as Vis <
Vout–6 V.
ZD
IS
Ris should be less than 20 kΩ for any
application. Even If current sense and diagnostic features
IIS
Ris0
are not used, Ris has to be connected.
Ris
IIS
IIS,lim
KILIS=IL/IIS
VIS