UPD166009T1F-E1-AY

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(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS INTEGRATED CIRCUIT μ PD166009 SINGLE N-CHANNEL HIGH SIDE INTELLIGENT POWER DEVICE PACKAGE DRAWING (unit: mm) The μ PD166009 device is an N-channel high-side switch with charge 4.0 MIN (4.4 TYP) sense and embedded protection functions. • Built-in charge pump 1 • Low on-state resistance 0.5±0.1 2 3 4 5 0 to 0.25 0.6±0.1 1.14 0.5±0.1 0.508 GAUGE PLANE • Over-temperature protection - Shutdown with auto-restart on cooling SEATING PLANE - Shutdown by short-circuit detection 1.52±0.12 0.8 • Short-circuit protection 2.3±0.1 6 6.1±0.2 FEATURES 1.0 TYP 6.5±0.2 5.0 TYP 4.3 MIN pump, current controlled input, diagnostic feedback with load current 10.3 MAX (9.8 TYP) GENERAL DESCRIPTION • Small multi-chip package: JEDEC 5-pin TO-252 NOTE 1. (MSL: 3, profile acc. J-STD-20C) No Plating area • Built-in diagnostic function - Proportional load current sensing - Defined fault signal in case of thermal shutdown and/or short circuit shutdown • AEC Qualified ORDERING INFORMATION Part Number μ PD166009T1F-E1-AY Note Lead plating Packing Package Sn Tape 2500 p/reel 5-pin TO-252 (MP-3ZK) Note Pb-free (This product does not contain Pb in the external electrode.) QUALITY GRADE Part Number Quality Grade μ PD166009T1F-E1-AY Special Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. APPLICATION • Light bulb (to 55 W) switching • Switching of all types of 14 V DC grounded loads, such as inductor, resistor and capacitor • Replacement for fuse and relay The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. S19688EJ2V0DS00 (2nd edition) Date Published January 2010 NS Printed in Japan The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. 2009 μ PD166009 BLOCK DIAGRAM 3 & Tab ICC VCC VCC - VIN IIN IN 2 VIN Internal power supply Charge pump Power supply voltage sense Current detector Dynamic clamp Output voltage sense Current sense ESD protection Control logic VCC Von ESD protection Fault signal output VOUT 4 Tab Terminal Name 1 OUT Output to load: pin 1 and 5 must be externally shorted. 2 IN Input; activates the power switch, if shorted to ground. 3&Tab VCC Supply Voltage: tab and pin 3 are internally shorted. OUT IS VIS Pin No. 5 Load IIS RIS PIN CONFIGURATION IS IL OUT Temperature Sensor 4 1&5 Function Sense Output: diagnostic feedback 1 2 3 4 5 Note Output to load: pin 1 and 5 must be externally shorted. Note If current sense and diagnostic features are not used, IS terminal has to be connected to GND via resistor. 2 Data Sheet S19688EJ2V0DS μ PD166009 ABSOLUTE MAXIMUM RATING (Ta = 25°C, unless otherwise specified) Parameter Symbol VCC voltage VCC1 VCC voltage (Load Dump) VCC2 Test Conditions Rating Unit 28 V 40 V RI = 1 Ω, RL = 1.5 Ω, td = 400 ms, RIS = 1 kΩ, IN = low or high VCC voltage (Reverse polarity) -VCC RL = 2.2 Ω, 1 minute −16 V Load current IL DC, TC = 25°C 30 A Load current (short circuit IL(SC) Self Limited A TC = 25°C 59 W Inductive load switch-off energy EAS1 IL = 10 A, VCC = 12 V, Tch,start ≤ 150°C, 50 mJ dissipation single pulse refer to page 16 105 mJ current) Power dissipation Maximum allowable energy PD EAS2 VCC = 18 V, Tch,start ≤ 150°C, Rsupply = 10 mΩ, Rshort = 50 mΩ, Lsupply = 5 μH, Lshort = 15 μH, under over load condition (Single pulse) refer to page 16 Channel temperature Tch −40 to +150 °C Storage temperature Tstg −55 to +150 °C Electric discharge capability VESD 2000 V 400 V DC VCC−28 V V Reverse polarity condition, 1 minute VCC+14 V V DC VCC−28 V V Reverse polarity condition, 1 minute VCC+14 V V HBM AEC-Q100-002 std. R = 1.5 kΩ, C = 100pF MM AEC-Q100-003 std. R = 0 Ω, C = 200pF Voltage of IN pin Voltage of IS pin VIN VIS RECOMMENDED OPERATING CONDITIONS Parameter Power supply voltage Symbol VCC Test Conditions Tch = −40 to 150°C Min. Typ. Max. Unit 8 − 18 V Cautions 1. It is assumed that VIN = 0 V when the device is activated. 2. Device operating range is limited by energy dissipation capability of the driver. User must carefully consider worst case load and current conditions in combination of operating voltage. THERMAL CHARACTERISTICS Parameter Thermal resistance Symbol Rth(ch-a) Test Conditions Device on 50 mm x 50 mm x 1.5 mmt Min. Typ. Max. Unit − 45 55 °C/W − − 3.17 °C/W epoxy PCB FR-4 with 6 cm of 70 μm 2 copper area Rth(ch-c) Data Sheet S19688EJ2V0DS 3 μ PD166009 ELECTRICAL CHARACTERISTICS (VCC = 12 V, Tch = 25°C, unless otherwise specified) Parameter Required current capability of Symbol IIH Test Conditions Min. Typ. Max. Unit − 1.0 2.2 mA − − 50 μA Tch = 25°C − 2.5 5.0 μA Tch = −40 to 150°C − 2.5 15.0 μA Tch = 25°C − 8 10 mΩ Tch = 150°C − 14 18 Tch = −40 to 150°C Input switch Input current for turn-off IIL Standby current ICC(off) On state resistance Ron IIN = 0 A IL = 7.5 A ton RL = 2.2 Ω, − 200 500 μs Turn off Time toff Tch = −40 to 150°C, refer to page 15 − 250 600 μs Slew rate on dV/dton 25 to 50% VOUT, RL = 2.2 Ω, − 0.2 0.6 V/μs − 0.2 0.5 V/μs Turn on Time Tch = −40 to 150°C, refer to page 15 Slew rate off -dV/dtoff 50 to 25% VOUT, RL = 2.2 Ω, Tch = −40 to 150°C, refer to page 15 4 Data Sheet S19688EJ2V0DS μ PD166009 PROTECTION FUNCTIONS (VCC = 12 V, Tch = 25°C, unless otherwise specified) Parameter On-state resistance at reverse battery condition Note Short circuit detection current Symbol Test Conditions Min. Typ. Max. Unit Tch = 25°C − 9.5 13 mΩ Tch = 150°C − 16 22 mΩ VCC − VIN = 6 V, Tch = −40°C − 50 120 A Von = 3 V Tch = 25°C − 50 − Tch = 150°C 20 45 − VCC − VIN = 6 V, Tch = −40°C − 35 110 Von = 6 V Tch = 25°C − 35 − Tch = 150°C 10 35 − VCC = −12 V, IL = −7.5 A, RIS = 1 kΩ, RIN Ron(rev) < 150 Ω IL6, 3(SC) IL6, 6(SC) Note Note IL12, 3(SC) IL12, 6(SC) Note IL12, 12(SC) IL18, 3(SC) IL18, 6(SC) Note Note Note IL18, 12(SC) IL18, 18(SC) Note Note VCC − VIN = 12 V, Tch = −40°C − 110 180 Von = 3 V Tch = 25°C 76 105 − Tch = 150°C 50 95 − VCC − VIN = 12 V, Tch = −40°C − 90 160 Von = 6 V Tch = 25°C − 85 − Tch = 150°C 40 80 − VCC − VIN = 12 V, Tch = −40°C − 55 120 Von = 12 V Tch = 25°C − 50 − Tch = 150°C 10 45 − VCC − VIN = 18 V, Tch = −40°C − 130 200 Von = 3 V Tch = 25°C − 125 − Tch = 150°C 60 110 − VCC − VIN = 18 V, Tch = −40°C − 110 170 Von = 6 V Tch = 25°C − 110 − Tch = 150°C 50 100 − VCC − VIN = 18 V, Tch = −40°C − 75 120 Von = 12 V Tch = 25°C − 70 − Tch = 150°C 30 65 − VCC − VIN = 18 V, Tch = −40°C − 50 90 Von = 18 V Tch = 25°C − 50 − 5 45 − 30 34 40 V Tch = −40 to 150°C 0.65 1 1.45 V td(OC) Tch = −40 to 150°C 0.9 2.1 3.8 ms VCIN(Uv) Tch = –40°C − − 5.8 V Tch = 25°C 3.6 4.5 5.4 V Tch = 150°C 3.2 − − V Tch = 150°C Output clamp voltage Von(CL) IL = 40 mA, Tch = –40 to 150°C Over load detection voltage VON(OvL) Turn-on check delay after input Note current positive slope Under voltage shutdown (inductive load switch off) Under voltage restart of VCIN(CPr) charge pump Thermal shutdown temperature Tth Thermal hysteresis ΔTth Tch = –40°C − − 6.5 V Tch = 25°C 4.1 5.1 6.0 V Tch = 150°C 3.7 − − V 150 175 − °C − 10 − °C Note Not subject to production test, specified by design. Data Sheet S19688EJ2V0DS 5 μ PD166009 DIAGNOSTIC CHARACTERISTICS (VCC = 12 V, Tch = 25°C, unless otherwise specified) Parameter Current sense ratio Symbol KILIS Test Conditions Min. Typ. Max. Unit Tch = −40°C 8300 9350 10800 Tch = 25°C 8300 9400 10600 Tch = 150°C 8300 9450 10000 Tch = −40°C 7500 9400 11400 Tch = 25°C 8000 9500 10800 Tch = 150°C 8200 9550 10200 Tch = −40°C 6100 9600 14200 Tch = 25°C 6500 9600 12800 Tch = 150°C 7600 9600 11500 0 − 60 μA 3.5 6.0 12.0 mA 3.5 7.0 12.0 mA KILIS = IL/IIS VIS < VOUT − 6 V, IIS < IIS,lim IL = 30 A IL = 7.5 A IL = 2.5 A Sense current offset current IIS,offset VIN = 0 V, IL = 0 A Sense current under fault IIS,fault Under fault conditions condition 8 V < VCC − VIS < 12 V, Tch = −40 to 150°C Sense current saturation IIS,lim current Vis < Vout − 6 V, Tch = −40 to 150°C Fault sense signal delay after Note short circuit detection tsdelay(fault) Tch = −40 to 150°C − 2 6 μs Sense current leakage current IIS(LL) IIN = 0 A − 0.1 0.5 μA Current sense settling time tson(IS) − 250 1000 μs − 50 100 μs after input current positive Note slope Current sense settling time Note during on condition Tch = −40 to 150°C, IL = 0 A Tsic(IS) 20 A Tch = −40 to 150°C, IL = 10 A 20 A Note Not subject to production test, specified by design. 6 Data Sheet S19688EJ2V0DS μ PD166009 FEATURES DESCLIPTION Driver Circuit (On-Off Control) The high-side output is turned on, if the input pin is shorted to ground. The input current is below IIH. The high-side output is turned off, if the input pin is open or the input current is below IIL. RCC is 100 Ω typ. ESD protection diode: 46 V typ. VCC IIN 0 RCC VZ,IN VOUT Logic VCC IN OFF ON OFF ZD IIN ON 0 t Switching a resistive load Switching lamps IIN IIN 0 0 IL IL 0 0 VOUT VOUT VCC 0 0 IIS IIS 0 t IIS,lim t 0 Data Sheet S19688EJ2V0DS 7 μ PD166009 Switching an inductive load IIN VCC 0 IL 0 SW1 IS ESD VOUT Ris Control Logic 0 VCC OUT Von(CL) IIS 0 t Dynamic clamp operation at inductive load switch off The dynamic clamp circuit works only when the inductive load is switched off. When the inductive load is switched off, the voltage of OUT falls below 0 V. The gate voltage of SW1 is then nearly equal to GND because the IS terminal is connected to GND via an external resister. Next, the voltage at the source of SW1 (= gate of output MOS) falls below the GND voltage. SW1 is turned on, and the clamp diode is connected to the gate of the output MOS, activating the dynamic clamp circuit. When the over-voltage is applied to VCC, the gate voltage and source voltage of SW1 are both nearly equal to GND. SW1 is not turned on, the clamp diode is not connected to the gate of the output MOS, and the dynamic clamp circuit is not activated. 8 Data Sheet S19688EJ2V0DS μ PD166009 Short circuit protection Case 1: IN pin is shorted to ground in an overload condition, which includes a short circuit condition. The device shuts down automatically when either or both of following conditions (a, b) is detected. The sense current is fixed at IIS,fault. Shutdown is latched until the next reset via input. (a) IL > IL(sc) (b) Von > Von(OvL) after td(OC) Case1-(a) IL > IL(sc) Short circuit detection IIN (Evaluation circuit) 0 IL(SC) IL VCC 0 VOUT/VCC Von OUT IIN IN VCC VBAT VBAT IIS IS VIN VON VIS VOUT RIS IL RL VOUT 0 : Cable impedance tsdelay(fault) IIS IIS,fault t 0 tsdelay(fault): Fault sense signal delay after short circuit detection IL(SC): Short circuit detection current Depending on the external impedance Typical Short circuit detection current characteristics The short circuit detection current changes according VCC voltage and Von voltage for the purpose of to be strength of the robustness under short circuit condition. IL(SC) vs. VCC − VIN 150 IL(SC) [A] Von=3V 160 120 140 120 IL(SC) [A] Von=6V 100 80 VCC-VIN=18V 60 40 VCC-VIN=12V 20 90 Von=12V 60 30 VCC-VIN=6V 0 Von [V] 0 5 10 15 20 0 5 Data Sheet S19688EJ2V0DS 10 VCC-VIN [V] 15 20 9 μ PD166009 Case1-(b) Von > Von(OvL) after td(OC) Short circuit detection IIN (Evaluation circuit) 0 IL IL(SC) VCC 0 IIN VOUT/VCC IN VCC Von(OvL) VBAT 0 VBAT Von OUT VIN IIS IS VIS VON VOUT VOUT RIS IL RL : Cable impedance td(oc) IIS td(oc): Turn-on check delay after input current positive slope IIS,fault t 0 Depending on the external impedance 10 Data Sheet S19688EJ2V0DS μ PD166009 Case 2: Short circuit during on-condition The device shuts down automatically when either or both of following conditions (a) is detected. The sense current is fixed at IIS,fault. Shutdown is latched until the next reset via input. (a) Von > Von(OvL) after td(oc) Case2-(a) Von > Von(OvL) after td(OC) IIN Short circuit detection 0 IL(SC) IL 0 VOUT/VCC VCC VBAT Von(OvL) (1 V typ.) VOUT 0 IIS tsdelay(fault) td(oc) IIS,fault t 0 Depending on the external impedance td(oc): Turn-on check delay after input current positive slope tsdelay(fault): Fault sense signal delay after short circuit detection IL(SC): Short circuit detection current (Evaluation circuit) VCC IN VBAT Von OUT IIN VIN IIS IS VIS VOUT RIS IL RL : Cable impedance Data Sheet S19688EJ2V0DS 11 μ PD166009 Over-temperature protection The output is switched off if over-temperature is detected. The device switches on again after it cools down. IIN 0 Tch Tth ΔTth VOUT 0 IIS IIS,fault t 0 Power dissipation under reverse battery condition In case of reverse battery condition, the internal N-ch MOSFET is turned on to reduce the power dissipation caused by the body diode. Additional power is dissipated by the internal resisters. Following is the formula for estimation of total power dissipation Pd(rev) in reverse battery condition. Pd(rev) = Ron(rev) x IL(rev) 2 -VCC + (VCC − Vf − Iin(rev) x RIN) x Iin(rev) IL(rev) RCC + (VCC − Iis(rev) x RIS) x Iis(rev) Iin(rev) = (VCC − 2 x Vf) / (RCC + RIN) Iis(rev) = (VCC − Vf) / (RCC + Ris0 + RIS) IN Ris0 The reverse current through the N-ch MOSFET has to be N-ch MOSFET RIN limited by the connected load. In order to turn on the N-ch MOSFET at reverse polarity IS OUT condition, the voltage at IN should be around 8 V by using RIS RL a MOSFET or small diode in parallel to the input switch. Iin(rev) Iis(rev) RIN should be estimated following formula. RIN < (|VCC| − 8 V) / 0.08 A 12 Data Sheet S19688EJ2V0DS μ PD166009 Device behavior at low voltage condition If the supply voltage (VCC − VIN) goes below VCIN(Uv), the device shuts off the output. If supply voltage (VCC − VIN) increases above VCIN(CPr), the device turns on the output automatically. The device stays off if supply voltage (VCC − VIN) does not increase above VCIN(CPr) after an under voltage shutdown. IIN 0 IL 0 VOUT/VCC VBAT VCIN(CPr) VOUT VCIN(Uv) 0 t Caution It is assumed that VIN = 0 V when IIN is activated. Data Sheet S19688EJ2V0DS 13 μ PD166009 Current sense output VCC RCC and Ris0 are 100 Ω typ. Vz,IS = 46 V (typ.), RIS = 1 kΩ VZ,IS RCC ZD nominal. IS IIS Ris0 RIS IIS IIS,lim KILIS = IL/IIS VIS < Vout − 6 V, IIS < IIS,lim IIS,offset IL IL,lim Current sense ratio KILIS 16000 Tch = -40degreeC Tch = 150degreeC 14000 Current Sense Ration 12000 10000 8000 6000 4000 0 5 10 15 Load Current 14 20 IL[A] Data Sheet S19688EJ2V0DS 25 30 35 μ PD166009 Measurement condition Switching waveform of OUT Terminal IIN ton toff 90% 50% 50% VOUT dV/dton -dV/dtoff 25% 25% 10% Switching waveform of IS terminal IIN tson(IS) tSIC(IS) tSIC(IS) IIS Data Sheet S19688EJ2V0DS 15 μ PD166009 Truth table Input Current State Output Sense Current L − OFF IIS(LL) Normal Operation ON IL/KILIS Over-temperature or Short circuit OFF IIS,fault Open Load ON IIS,offset H Application example in principle 5V Vbat 1) μ PD166009 R Micro. VCC OUT IN 2) OUTPUT PORT R OUT 3) R IS Load ADC PORT R GND Ris 1) In order to prevent leakage current through at IN terminal via PCB, it is recommended to pull up the IN terminal to VCC using around 1 to10 kΩ (approx.) resistor. 2) If output current is over destruction current characteristics for inductive load at a single off, it must be connected through an external component for protection purpose. 3) If current sense and diagnostic features are not used, IS terminal has to be connected to GND via resistor. 16 Data Sheet S19688EJ2V0DS μ PD166009 TYPICAL CHARACTERISTICS INPUT CURRENT FOR TURN OFF VS. AMBIENT TEMPERATURE 2.5 500 2 400 1.5 300 IIL [uA] IIH [mA] REQUIRED CURRENT CAPABILITY OF INPUT SWITCH VS. AMBIENT TEMPERATURE 1 200 0.5 100 0 -50 0 50 100 150 0 -50 200 Ambient Temperature Ta [degreeC] 0 50 100 150 200 Ambient Temperature Ta [degreeC] STANDBY CURRENT VS. AMBIENT TEMPERATURE ON STATE RESISTENCE VS. VCC - VIN voltage 20 14 12 16 Ron [mΩ] Icc(off) [uA] 10 12 8 8 6 4 4 2 Ta=25degreeC 0 -50 0 0 50 100 150 200 0 5 Ambient Temperature Ta [degreeC] 14 14 12 12 10 10 8 6 6 4 2 2 50 100 20 8 4 0 15 ON STATE RESISTENCE AT REVERSE BATTERY CONDITION VS. AMBIENT TEMPERATURE Ron(rev) [mΩ] [m ] Ron [mΩ] [m ] ON STATE RESISTENCE VS. AMBIENT TEMPERATURE 0 -50 10 Vcc - VIN [V] 150 200 0 -50 Ambient Temperature Ta [degreeC] 0 50 100 150 200 Ambient Temperature Ta [degreeC] Data Sheet S19688EJ2V0DS 17 μ PD166009 TURN ON TIME VS. AMBIENT TEMPERATURE TURN OFF TIME VS. AMBIENT TEMPERATURE 500 500 400 400 Vcc-VIN=6V 300 toff [us] ton [us] Vcc-VIN=6V Vcc-VIN=12V 200 Vcc-VIN=18V 100 0 -50 200 0 50 100 150 0 -50 200 0.6 0.5 0.5 0.4 0.4 -dV/dtoff [V/us] dV/dton [V/us] 0.6 0.3 100 150 200 0.2 0.3 0.2 0.1 0 50 100 150 200 0 -50 Ambient Temperature Ta [degreeC] 40 38 36 34 32 30 0 50 100 150 0 50 100 150 Ambient Temperature Ta [degreeC] OUTPUT CLAMP VOLTAGE (INDUCTIVE LOAD SWITCH OFF) VS. AMBIENT TEMPERATURE 42 Von(CL) [V] 50 SLEW RATE OFF VS. AMBIENT TEMPERATURE 0.1 200 Ambient Temperature Ta [degreeC] 18 0 Ambient Temperature Ta [degreeC] SLEW RATE ON VS. AMBIENT TEMPERATURE 28 -50 Vcc-VIN=18V 100 Ambient Temperature Ta [degreeC] 0 -50 Vcc-VIN=12V 300 Data Sheet S19688EJ2V0DS 200 μ PD166009 SENSE CURRENT OFFSET CURRENT VS. AMBIENT TEMPERATURE SENSE CURRENT UNDER FAULT CONDITION VS. AMBIENT TEMPERATURE 40 10 20 8 IIS.fault [mA] 12 IIS.offset [uA] 60 0 6 -20 4 -40 2 -60 -50 0 50 100 150 0 -50 200 0 Ambient Temperature Ta [degreeC] 50 100 150 200 Ambient Temperature Ta [degreeC] SENSE CURRENT LEAKAGE CURRENT VS. AMBIENT TEMPERATURE SENSE CURRENT SATURATION CURRENT VS. AMBIENT TEMPERATURE 12 0.1 10 0.08 IIS(LL) [uA] IIS.lim [mA] 8 6 0.06 0.04 4 0.02 2 0 -50 0 50 100 150 0 -50 200 6 5 5 4 4 VCIN(CPr) [V] VCIN(Uv) [V] 6 3 2 1 1 50 100 100 150 200 3 2 0 50 UNDER VOLTAGE RESTART OF CHARGE PUMP VS. AMBIENT TEMPERATUR UNDER VOLTAGE SHUTDOWN VS. AMBIENT TEMPERATURE 0 -50 0 Ambient Temperature Ta [degreeC] Ambient Temperature Ta [degreeC] 150 200 0 -50 0 50 100 150 200 Ambient Temperature Ta [degreeC] Ambient Temperature Ta [degreeC] Data Sheet S19688EJ2V0DS 19 μ PD166009 INDUCTIVE LOAD SWITCH-OFF ENERGY DISSIPATION FOR A SINGLE PULSE Maximum allowable load inductance for a single switch off 100 IAS[A] Tch,start≤150degreeC, VCC=12V 10 1 0.01 0.1 1 10 L[mH] The energy dissipation for an inductive load switch-off single pulse in device (EAS1) is estimated by the following formula as RL = 0Ω. EAS1 = 1 2 ⎞ ⎟ ⎝ Von(CL) − VCC ⎠ 2 ⎛ ⋅ I ⋅ L⎜ Von(CL) MAXIMUM ALLOWABLE SWITCH OFF ENERGY (SINGLE PULSE) The harness connecting the power supply, the load and the device has a small inductance and resistance. When the device turns off, the energy stored in the harness inductance is dissipated by the device, the harness resistance and the internal resistance of power supply. If the current is abnormally high due to a load short, the energy stored in the harness can be large. This energy has to be taken into consideration for the safe operation. The following figure shows the condition for Eas2, the maximum switch-off energy (single pulse) for abnormally high current. Lsupply Rsupply VBAT Vcc OUT IN VBAT = 18 V, Lshort IS Rsupply = 10 mΩ, Rshort = Rsc + RSW(on) = 50 mΩ, Lsupply = 5 μH, Lshort = 15 μH, Rsc RIS RL RSW Tch,start ≤ 150°C : Cable resistance : Cable inductance 20 Data Sheet S19688EJ2V0DS μ PD166009 THERMAL CHARACTERISTICS TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Transient Thermal Resistance Rth (degreeC/W) 1000 Device on 50 mm × 50 mm × 1.5 mmt epoxy PCB 2 FR-4 with 6 cm of 70 μm copper area 100 Rth(ch-a)=55.0degreeC/W 10 Rth(ch-c)=3.17degreeC/W 1 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width (s) Data Sheet S19688EJ2V0DS 21 μ PD166009 TAPING INFORMATION This is one type (E1) of direction of the device in the career tape. Draw-out side MARKING INFORMATION This figure indicates the marking items and arrangement. However, details of the letterform, the size and the position aren't indicated. 6 6 0 0 9 Pb-free plating marking Lot code Note Internal administrative code Note Composition of the lot code Week code (2 digit number) Year code (last 1 digit number) 22 Data Sheet S19688EJ2V0DS μ PD166009 REVISION HISTORY Revision Major changes since last version 1st edition Released 1st edition March 2009 2nd edition Released 2nd edition January 2010 Revised application example in principle Data Sheet S19688EJ2V0DS Page 16 23 μ PD166009 NOTES FOR CMOS DEVICES (1) VOLTAGE APPLICATION WAVEFORM AT INPUT PIN: Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the CMOS device stays in the area between VIL (MAX) and VIH (MIN) due to noise, etc., the device may malfunction. Take care to prevent chattering noise from entering the device when the input level is fixed, and also in the transition period when the input level passes through the area between VIL (MAX) and VIH (MIN). (2) HANDLING OF UNUSED INPUT PINS: Unconnected CMOS device inputs can be cause of malfunction. If an input pin is unconnected, it is possible that an internal input level may be generated due to noise, etc., causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND via a resistor if there is a possibility that it will be an output pin. All handling related to unused pins must be judged separately for each device and according to related specifications governing the device. (3) PRECAUTION AGAINST ESD: A strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it when it has occurred. Environmental control must be adequate. When it is dry, a humidifier should be used. It is recommended to avoid using insulators that easily build up static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work benches and floors should be grounded. The operator should be grounded using a wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with mounted semiconductor devices. (4) STATUS BEFORE INITIALIZATION: Power-on does not necessarily define the initial status of a MOS device. Immediately after the power source is turned ON, devices with reset functions have not yet been initialized. Hence, power-on does not guarantee output pin levels, I/O settings or contents of registers. A device is not initialized until the reset signal is received. A reset operation must be executed immediately after power-on for devices with reset functions. (5) POWER ON/OFF SEQUENCE: In the case of a device that uses different power supplies for the internal operation and external interface, as a rule, switch on the external power supply after switching on the internal power supply. When switching the power supply off, as a rule, switch off the external power supply and then the internal power supply. Use of the reverse power on/off sequences may result in the application of an overvoltage to the internal elements of the device, causing malfunction and degradation of internal elements due to the passage of an abnormal current. The correct power on/off sequence must be judged separately for each device and according to related specifications governing the device. (6) INPUT OF SIGNAL DURING POWER OFF STATE : Do not input signals or an I/O pull-up power supply while the device is not powered. The current injection that results from input of such a signal or I/O pull-up power supply may cause malfunction and the abnormal current that passes in the device at this time may cause degradation of internal elements. Input of signals during the power off state must be judged separately for each device and according to related specifications governing the device. 24 Data Sheet S19688EJ2V0DS μ PD166009 • The information in this document is current as of January, 2010. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. 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