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MO4Q

MO4Q

  • 厂商:

    RFHIC

  • 封装:

  • 描述:

    MO4Q - Active Up Mixer - RFHIC

  • 详情介绍
  • 数据手册
  • 价格&库存
MO4Q 数据手册
Active Up Mixer Product Features • Integrated Monolithic GaAs MESFET • Active Mixer Packages Module • Pb-free 3mm 16-pin QFN package • Lower Manufacturing Cost • Higher Productivity and Reliability • Very Low Noise Figure & Low Distortion MO4Q Application • Repeater • Base Station Description The MCM is implemented with reliable and mature GaAs MESFET technology. Package Type: QFN-3 The IC operates from a positive +5V rail consuming 130 mA of current while only requiring a 2 dBm LO drive. Specifications RF Frequency (MHz) 1850 1950 2140 2160 (Operating Temperature: -30°C~+80°C) LO Frequency (MHz) 1780 1880 2070 2090 IF Frequency (MHz) Conversion Gain (dB) 6 OIP3 LO to IF Leakage IF to RF Leakage (dBm) -60 -60 -60 -60 5V/130mA 5V/130mA 5V/130mA 5V/130mA Vdd/Idd (dBm) 24 24 24 24 (dBm) -15 -15 -15 -15 70 6 6 6 Package Dimensions (Type :QFN3) Functional Pin Layout Pin No. 1 2 3 4 5 6 7 8 Function IFN In NC IF In NC CUR Ground Ground Bias Pin No. 16 15 14 13 12 11 10 9 Function RFN Out NC RF Out Ground Bias NC LO_In LON_In Functional Diagram 14 16 IF INPUT 3 RF OUTPUT 10 LO INPUT ▪ Tel : 82-31-250-5011 ▪ rfsales@rfhic.com ▪ All specifications may change without notice. ▪ Version 8.01 Active Up Mixer MO4Q Application Schematic - IMT Bias +5V C7 100pF RF Output 1 2 R1 13K R2 620 C2 opt. C3 10nF C4 10pF 1 R3 240 IF Input C5 10nF 2 3 4 5 6 7 8 12 11 C8 100pF 10 9 C9 opt. LO Input @2dBm Chip Balun TDK HHM1516 C1 100nF 6 5 4 NC R4 0 GND 3 L2 opt. 16 15 14 13 Bias +5V C6 0.5pF L1 2.7uH C10 100pF Bias +5V ▪ Tel : 82-31-250-5011 ▪ rfsales@rfhic.com ▪ All specifications may change without notice. ▪ Version 8.01 Active Up Mixer Typical Performance at 25℃ - PCS, IMT MO4Q Test Condition: IF = 70MHz, LO = 1630~2230MHz@2dBm, RF = 1700~2300MHz RFHIC Corporation (RFHIC) reserves the right to make changes to any products herein or to discontinue any product at any time without notice. RFHIC do not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including without limitation consequential or incidental damages. The product specifications herein expressed have been carefully checked and are assumed to be reliable. However, RFHIC disclaims liability for inaccuracies and strongly recommends buyers to verify that the information they are using is current before placing purchase orders. RFHIC products are not intended for use in life support equipment or application where malfunction of the product can be expected to result in personal injury or death. Buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHIC and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such use. RFHIC’s liability under or arising out of damages, claims of whatsoever kind and nature which RFHIC products could cause shall be limited in amount to the net purchase price of the products sold to buyer by RFHIC. ▪ Tel : 82-31-250-5011 ▪ rfsales@rfhic.com ▪ All specifications may change without notice. ▪ Version 8.01
MO4Q
1. 物料型号: - 型号为M MO44Q。

2. 器件简介: - 这是一个集成单片GaAs MESFET的有源混频器模块,采用无铅3mm 16引脚QFN封装,具有较低的制造成本和更高的生产力及可靠性。

3. 引脚分配: - 12号引脚:IFN输入 - 16号引脚:RFN输出 - 3号引脚:IF输入 - 14号引脚:RF输出 - 13号引脚:地(Ground) - 其余引脚为NC(无连接)或用于偏置和地。

4. 参数特性: - 工作温度范围:-30°C至+80°C。 - 供电电压:+5V,工作电流:130mA。 - LO驱动功率:2 dBm。 - 转换增益:6 dB。 - OIP3:24 dBm。 - LO到IF泄露:-15 dBm。 - IF到RF泄露:-60 dBm。

5. 功能详解: - 该混频器在70 MHz的IF频率和1630至2230 MHz的LO频率下工作,提供6 dB的转换增益和低噪声系数以及低失真。

6. 应用信息: - 适用于中继器和基站。

7. 封装信息: - 封装类型为QFN-3,具体尺寸信息在文档中有图表展示。

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