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RFM0947-10

RFM0947-10

  • 厂商:

    RFHIC

  • 封装:

  • 描述:

    RFM0947-10 - Power Amplifier - RFHIC

  • 详情介绍
  • 数据手册
  • 价格&库存
RFM0947-10 数据手册
Power Amplifier Product Features • Small size by using simple matching circuit board • High Efficiency • Single Supply Voltage • High Linearity, 10W Power • Heat sink 99.9% copper, gold plate • High Productivity • Low Manufacturing Cost • GaAs MESFET RFM0947-10 Application • GSM Repeater • RF Sub-Systems • Base Station Package : DP-36 Description The power amplifier module is designed for base stations and cell extenders as cellular and GSM , IMT-2000, ISM, MMDS frequency systems. GaAs MESFET is used and attached on a copper sub carrier. It is connected by using bias and in/out matching circuit method with gold wire bonding. The bias and matching circuit are designed much simpler than other circuits for silicon IC’s, LDMOS because GaAs MESFET is operated by low supply voltage whereas others are operated by high supply voltage. For better thermal conductivity, enhanced mode PCB was used in the 99.9% copper gold plate heat sink. This simplicity results cost competitiveness and performance enhancement. Specifications PARAMETER Frequency Range (MHz) Small Signal Gain (dB) Gain Flatness (Max.) Gain Variation Over Temp VSWR (Input) Output P1dB CDMA Power (1 FA) Vcc / Idc (CDMA Only) OIP3 @ tone / 27 dBm Noise Figure (Typ.) Shut Down (On/Off) In/Out Connectors 49 dBm 37 dBm Min Typ 935 ~ 960 16 ± 0.5dB @ 50MHz BW ± 0.5dB 2:1 38 dBm 32 dBm 9V / 1.2A 50 dBm 5 dB +5V @ 25㎂ / 0V SMA Female (50 Ω) -20°C ~ +70°C ± 1.0dB Max Dimensions in mm Operating Temp Range Dimensions (W×L×H) Functional Diagram 29.0 × 30.2 × 9.0 [mm] (RFM) 48.0 × 54.2 × 22.0 [mm] (RFH) NOTE * CDMA : 1.23MHz symbol rate ; Forward Link ; 9 Channels, Multi tone Available @ ±750KHz offset in 30KHz resolution bandwidth @ ±1.98MHz offset in 30KHz resolution bandwidth * RFM : Internally Matched Module * RFH : Housing Type : RF Connector : SMA Female ▪ Tel : 82-31-250-5011 ▪ rfsales@rfhic.com ▪ All specifications may change without notice. ▪ Version 5.3 Power Amplifier RFM0947-10 Performance Charts (Vd=9V, Id=1.2A, T=25℃) ▪ Tel : 82-31-250-5011 ▪ rfsales@rfhic.com ▪ All specifications may change without notice. ▪ Version 5.3 Power Amplifier Package Dimensions (Type: DP-36) RFM0947-10 Pin NO 1 2 3 Function GND RF IN GND Pin NO 6 5 4 Installation Guideline ★ It can be easily removed with solder wick and other removable material. RFHIC Corporation (RFHIC) reserves the right to make changes to any products herein or to discontinue any product at any time without notice. RFHIC do not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including without limitation consequential or incidental damages. The product specifications herein expressed have been carefully checked and are assumed to be reliable. However, RFHIC disclaims liability for inaccuracies and strongly recommends buyers to verify that the information they are using is current before placing purchase orders. RFHIC products are not intended for use in life support equipment or application where malfunction of the product can be expected to result in personal injury or death. Buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHIC and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such use. RFHIC’s liability under or arising out of damages, claims of whatsoever kind and nature which RFHIC products could cause shall be limited in amount to the net purchase price of the products sold to buyer by RFHIC. ▪ Tel : 82-31-250-5011 ▪ rfsales@rfhic.com ▪ All specifications may change without notice. ▪ Version 5.3 9 9 Function Vcc RF OUT E/N
RFM0947-10
1. 物料型号: - 型号为RRFFM M00994477--1100,由RFHIC公司生产。

2. 器件简介: - 该功率放大器模块设计用于基站和手机信号扩展器,适用于蜂窝和GSM、IMT-2000、ISM、MMDS等频率系统。使用GaAs MESFET,并将其安装在铜基载体上,通过偏置和输入/输出匹配电路方法以及金丝键合进行连接。偏置和匹配电路设计比其他硅IC、LDMOS电路简单得多,因为GaAs MESFET由低供电电压操作,而其他则由高供电电压操作。为了更好的导热性,使用了99.9%铜镀金板散热器。这种简单性导致成本竞争力和性能提升。

3. 引脚分配: - 引脚1:GND(地) - 引脚2:RF IN(射频输入) - 引脚3:GND(地) - 引脚4:E/N(使能) - 引脚5:RF OUT(射频输出) - 引脚6:Vcc(电源)

4. 参数特性: - 频率范围:935~960MHz - 小信号增益:16dB - 增益平坦度:在50MHz带宽下最大±0.5dB - 温度变化下的增益变化:±0.5dB至±1.0dB - 输入VSWR:2:1 - 输出P1dB:37dBm至38dBm - CDMA功率(1 FA):32dBm - OIP3@tone/27dBm:49dBm至50dBm - 噪声系数(典型值):5dB - 关闭功能(开/关):+5V@25A/0V - 工作温度范围:-20°C至+70°C

5. 功能详解: - 该模块专为GSM中继器、RF子系统和基站设计,具有高效率、单电源电压、高线性、10W功率等特点。散热器使用99.9%铜镀金板,以提高热传导效率。

6. 应用信息: - 应用于GSM中继器和RF子系统。

7. 封装信息: - 封装类型为DP-36,尺寸公差为008 0.2mm。
RFM0947-10 价格&库存

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