CGA-3318Z

CGA-3318Z Dual CATV Broadband High Linearity SiGe HBT Amplifier CGA-3318Z DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER Package: ESOP-8 Product Description RFMD’s CGA-3318Z is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional price. A Darlington configuration is utilized for broadband performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. The CGA-3318Z contains two amplifiers for use in wideband Push-Pull CATV amplifiers requiring excellent second order performance. The second and third order non-linearities are greatly improved in the push-pull configuration. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS Features    Amplifier Configuration  Lead-Free, RoHS Compliant, and Green Packaging Excellent CSO/CTB/XMOD Performance at +34dBmV Output Power Per Tone Dual Devices in Each SOIC-8 Package Simplify Push-Pull Configuration PC Board Layout 5MHz to 900MHz Operation CATV Head End Driver and Predriver Amplifier CATV Line Driver Amplifier 1 2 3 4 8 7 6 5 Applications    SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT Parameter Small Signal Gain Min. 10.0 Specification Typ. 13.2 12.5 12.0 69.0 71.5 69.0 36.5 38.0 Max. Unit dB dB dB dBm dBm dBm dBm dBm dBm dBm dBm dBm dBm dBm dB dB dB dB dB V mA °C/W Condition 5MHz 50MHz and 500MHz 870MHz 50MHz, POUT per tone=+6dBm 250MHz, POUT per tone 500MHz, POUT per tone 50MHz, POUT per tone=+6dBm 500MHz, POUT per tone=+6dBm 870MHz, POUT per tone=+6dBm 50MHz 500MHz 870MHz 500MHz 50 - 870MHz 500MHz 50 - 870MHz 50MHz, Balun Insertion Loss Included 500MHz, Balun Insertion Loss Included 870MHz, Balun Insertion Loss Included OIP2, Tone Spacing=1MHz 67.0 OIP3, Tone Spacing=1MHz 36.0 Output Power at 1dB Compression 18.6 Input Return Loss 10 Output Return Loss 10 Noise Figure 38.0 20.0 21.0 20.6 17.0 12.0 4.2 4.3 5.0 4.1 150 50 Device Operating Voltage Device Operating Current Thermal Resistance 3.9 135 6.0 4.3 165 (Junction to Lead) RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS091119 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 10 CGA-3318Z Absolute Maximum Ratings Parameter Max Device Current (ID) Max Device Voltage (VD) Max RF Input Power Max Junction Temp (TJ) Operating Temp Range (TL) Max Storage Temp ESD Rating - Human Body Model (HBM) Moisture Sensitivity Level Rating 225 6 +18 +150 -40 to +85 +150 1B 1 Unit mA V dBm °C °C °C Class MSL Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. *Note: Load condition1, ZL =50 . Load condition2, ZL =10:1 VSWR. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD 85 dBc can be limited by system noise. 4 of 10 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS091119 CGA-3318Z Typical RF Performance - Single Ended - 50 Ohm System VS=8V, ID=75mA (one amp biased), TL=+25°C, RBIAS=51 Ohms Gain & Isolation vs. Frequency 16 14 12 Gain 0 -4 -8 |S11| & |S22| vs. Frequency 0 -5 -10 Gain (dB) Isolation (dB) 10 8 6 Isolation 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -12 -16 -20 -24 -28 -32 -15 |S11| dB -20 -25 -30 -35 -40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 |S22| Frequency (GHz) Frequency (GHz) Typical RF Performance - Single Ended - 37.5 Ohm System VS=8V, ID=75mA (one amp biased), TL=+25°C, RBIAS=51 Ohms Gain & Isolation vs. Frequency 16 14 12 Gain 0 -4 -8 0 -5 -10 |S11| & |S22| vs. Frequency |S22| Isolation (dB) Gain (dB) 10 8 6 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Isolation -12 -16 -20 -24 -28 -32 -15 dB -20 -25 -30 -35 -40 0.0 |S11| 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Frequency (GHz) Frequency (GHz) DS091119 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 5 of 10 CGA-3318Z 50MHz to 870MHz Application Circuit Schematic Vs RBIAS 1 F Tant. P 0.01 F 1000pF P 68pF 220 nH 1 8 Amp 1 Macom ETC1-1-13 1000 pF 2,3 6,7 1000 pF 1000 pF 4 Amp 2 5 1000 pF Macom ETC1-1-13 CGA-3318 SOIC-08 220 nH 1 F Tant. P 0.01 F P 1000pF 68pF RBIAS Vs 50MHz to 870MHz Evaluation Board Layout Rbias 1uF Tant. RF INPUT .01uF 1000pF 68pF Balun ETC1-1-13 220nH 1000pF 1000pF Balun ETC1-1-13 RF OUTPUT 1000pF 220nH 1000pF 68pF 1000pF .01uF 1uF Tant. ECB-101611 Rev A ESOP-8 Push-Pull Eval Board Rbias 6 of 10 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS091119 CGA-3318Z 5MHz to 210MHz Application Circuit Schematic Vs RBIAS 1 F Tant. P 0.01 F 1000pF P 68pF 10 P + 1 8 Amp 1 Macom ETC1-1T 0.01 F P 2,3 6,7 0.01 F P 0.01 F P 4 Amp 2 5 0.01 F P Macom ETC1-1T CGA-3318 SOIC-08 10 P + 1 F Tant. P 0.01 F P 1000pF 68pF RBIAS Vs 5MHz to 100MHz Evaluation Board Layout Rbias 1uF Tant. RF INPUT .01uF 1000pF 68pF Balun ETC1-1T 0.01uF 10uH 0.01uF Balun ETC1-1T RF OUTPUT 0.01uF 10uH 0.01uF 68pF 1000pF .01uF 1uF Tant. ECB-101611 Rev A ESOP-8 Push-Pull Eval Board Rbias DS091119 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 7 of 10 CGA-3318Z Recommended Bias Resistor Values for ID= 150mA Supply Voltage (VS) RBIAS RBIAS Power Rating 8V 51 1/2W 9V : 1/2W 12V : 1W 1W 15V RBIAS= 2(VS-VD) ID Typical 5-100 MHz RF Performance: VS=8V, ID=150mA @ TL=+25°C, Push-Pull Configuration Gain vs. Frequency 16 14 12 Return Loss vs. Frequency 0 -5 |S11| and |S22| (dB) -10 |S22| -15 -20 -25 -30 |S11| |S21| (dB) 10 8 6 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100 Frequency (MHz) 22 21 20 19 18 17 16 0 10 20 30 40 50 60 70 80 P1dB IP3 Frequency (MHz) Noise Figure vs. Frequency 8 7 6 P1dB and IP3 vs. Frequency 40 39 P1dB (dBm) IP3 (dBm) 38 37 36 35 NF (dB) 5 4 3 2 1 34 90 100 110 0 0 10 20 30 40 50 60 70 80 90 100 110 Frequency (MHz) Frequency (MHz) 8 of 10 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS091119 CGA-3318Z Pin 1 2, 3 4 5 6, 7 8 EPAD Function RF IN GND RF IN RF OUT/VCC GND RF OUT/VCC GND Description Device 1. RF input pin. This pin requires the use of an external DC-blocking capacitor as shown in the schematic. Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. Device 2. RF input pin. This pin requires the use of an external DC-blocking capacitor as shown in the schematic. Device 2. RF output and bias pin. Bias should be supplied to this pin through an external series resistor and RF choke inductor. Because DC biasing is present on this pin, a DC-blocking capacitor should be used in most applications. The supply side of the bias network should be well bypassed. Same as pins 2 and 3. Device 1. Same as pin 5. Exposed area on the bottom side of the package must be soldered to the ground plane of the board for optimum thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern. Device Pin Out 1 8 2 7 3 6 4 5 Suggested Pad Layout PCB Pad Layout Dimensions in inches [millimeters] Sized for 31 mil thick FR-4 DS091119 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 9 of 10 CGA-3318Z Package Drawing and Marking Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances. Lot Code CGA3318 Lot Code CGA3318Z Tin-Lead Lead Free Ordering Information Part Number CGA3318ZSB CGA3318ZSQ CGA3318ZSR CGA3318Z CGA3318Z-EVB1 CGA3318Z-EVB2 Description 5pcs Sample Bag 25pcs Sample Bag Dual CATV Broadband HBT AMP Dual CATV Broadband HBT AMP 50MHz to 870MHz Eval Bd 5MHz to 100MHz Eval Bd Reel Size N/A N/A 7” 7” N/A N/A Devices/Reel N/A N/A 100pcs 500pcs N/A N/A 10 of 10 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS091119