D10040250GT

D10040250GT D10040250GT GaAs Power Doubler Hybrid 40MHz to 1000MHz Package: SOT-115J The D10040250GT is a Hybrid Power Doubler amplifier module. The part employs GaAs die and is operated from 40MHz to 1000MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. Features ■ Excellent Linearity ■ Superior Return Loss Performance ■ Extremely Low Distortion ■ Optimal Reliability ■ Low Noise ■ Unconditionally Stable Under All Terminations ■ 24.5dB Min. Gain at 1GHz ■ 375mA Max. at 24VDC Applications ■ 40MHz to 1000MHz CATV Amplifier Systems Ordering Information D10040250GT Box with 50 pieces Absolute Maximum Ratings Parameter Rating Unit RF Input Voltage (single tone) 75 dBmV DC Supply Over-Voltage (5 minutes) 30 V Storage Temperature -40 to +100 °C Operating Mounting Base Temperature -30 to +100 °C Caution! ESD sensitive device. RoHS (Restriction of Hazardous Substances): Compliant per EU Directive 2011/65/EU. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. ® DS131219 ® RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 3 D10040250GT Nominal Operating Parameters Specification Parameter Unit Min Typ Condition Max V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω General Performance 23.5 24.0 24.5 dB f = 50MHz 26.0 dB f = 1000MHz 2.0 dB f = 40MHz to 1000MHz 0.8 dB f = 40MHz to 1000MHz (Peak to Valley) 20.0 dB f = 40MHz to 320MHz 19.0 dB f = 320MHz to 640MHz 17.0 dB f = 640MHz to 870MHz 16.0 dB f = 870MHz to 1000MHz 20.0 dB f = 40MHz to 320MHz 19.0 dB f = 320MHz to 640MHz 18.0 dB f = 640MHz to 870MHz 17.0 dB f = 870MHz to 1000MHz 5.5 dB f = 50MHz to 1000MHz 375.0 mA Power Gain 24.5 [1] Slope 0.5 1.0 Flatness of Frequency Response Input Return Loss Output Return Loss Noise Figure Total Current Consumption (DC) 350.0 V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω Distortion Data 40MHz to 870MHz CTB -64 -62 dBc XMOD -60 -58 dBc CSO -65 -63 dBc 132 ch flat; V0 = 44dBmV[2] 1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. 2. 132 channels, NTSC frequency raster: 55.25MHz to 865.25MHz, +44dBmV flat output level. Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA. Composite Triple Beat (CTB) - The CTB parameter is defined by the NCTA. Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS131219 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 3 D10040250GT Package Drawing (Dimensions in millimeters) I U 123 5 7 89 C E J S P R M K O T Q øG N D 0 B 5 10mm scale H L Nominal Min Max A 44,6 ± 0,2 44,4 44,8 B 13,6 ± 0,2 44,4 13,4 13,8 C 20,4 ± 0,5 19,9 20,9 D 8 ± 0,15 7,85 8,15 E 12,6 ± 0,15 12,45 12,75 F 38,1 ± 0,2 37,9 38,3 G 4 +0,2 / -0,05 3,95 4,2 H 4 ± 0,2 3,8 4,2 I 25,4 ± 0,2 25,2 25,6 J UNC 6-32 - - K 4,2 ± 0,2 4,0 4,4 L 27,2 ± 0,2 27,0 27,4 M 11,6 ± 0,5 11,1 12,1 N 5,8 ± 0,4 5,4 6,2 O 0,25 ± 0,02 0,23 0,27 P 0,45 ± 0,03 0,42 0,48 Q 2,54 ± 0,3 2,24 2,84 R 2,54 ± 0,5 2,04 3,04 6 S 2,54 ± 0,25 2,29 2,79 7-8 GND T 5,08 ± 0,25 4,83 5,33 9 Output U 5,08 ± 0,25 4,83 5,33 F A Notes: European Projection Pinning: Pin Name 1 Input 2-3 GND 4 5 +VB RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS131219 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 3