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FMS2016-005

FMS2016-005

  • 厂商:

    RFMD(威讯)

  • 封装:

    12-VFQFN

  • 描述:

    IC RF SWITCH SP4T 2.5GHZ 12QFN

  • 数据手册
  • 价格&库存
FMS2016-005 数据手册
FMS2016-005 FMS2016-005 High Power Reflective GaAs SP4T Switch HIGH POWER REFLECTIVE GaAs SP4T SWITCH Package: 3 mm x 3 mm QFN Product Description Features The FMS2016-005 is a low loss, high power, linear single-pole four-throw Gallium Arsenide antenna switch designed for use in mobile handset and other high power switching applications. The die is fabricated using the RFMD FL05 0.5 Pm switch process technology, which offers excellent performance optimized for switch applications. „ es ig n „ „ Optimum Technology Matching® Applied „ GaAs HBT GaAs MESFET Applications D InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT ew 9 Si CMOS Si BJT GaN HEMT rN InP HBT RF MEMS Specification Typ. Fo LDMOS Parameter Min. Max. N ot Return Loss Isolation 16 30 Isolation 2nd Harmonic Level 3rd Harmonic Level Switching Speed: TRISE, TFALL Switching Speed: TON, TOFF Control Current IP3 P0.1 dB 26 0.55 0.65 20 34 32 34 30 -75 -75 -75 -75 < 0.3 0.75 0.85 -60 -65 -60 -65 0.5 68 > 66 > 38 > 37 15 „ „ Multi-band GSM/DCS/PCS/EDGE Handset Modules High Power and Linear RF Switching Applications Unit Electrical Specifications Insertion Loss Excellent Low Control Voltage Performance Excellent Harmonic Performance Under GSM/DCS/PCS/EDGE Power Levels High Isolation: > 30 dB typ. at 1.8 GHz NiPdAu Finish for Military and High Reliability Applications dB dB dB dB dB dB dB dBc dBc dBc dBc Ps Ps PA dBm dBm dBm dBm Condition TAMBIENT = 25 °C, VCTRL = 0 V/2.7 V, ZIN = ZOUT = 50 : External DC-blocking capacitors are required on all RF ports (typ. 47 pF) 0.5 GHz to 1.0 GHz 1.0 GHz to 2.0 GHz 0.5 GHz to 2.5 GHz 0.5 GHz to 1.0 GHz 1.0 GHz to 2.0 GHz; RF1 to RF2, RF1 to RF3, RF2 to RF4 0.5 GHz to 1.0 GHz 1.0 GHz to 2.0 GHz; RF3 to RF4 1 GHz, PIN = +35 dBm, 100% duty cycle 2 GHz, PIN = +35 dBm, 100% duty cycle 1 GHz, PIN = +35 dBm, 100% duty cycle 2 GHz, PIN = +35 dBm, 100% duty cycle 10 % to 90 % RF and 90 % to 10 % RF 50 % control to 90 % RF and 50 % control to 10 % RF +35 dBm RF input at 1 GHz 0.9 GHz and 0.91 GHz, PIN = +20 dBm 1.85 GHz and 1.86 GHz, PIN = +20 dBm 1.0 GHz 2.0 GHz RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS130507 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 6 FMS2016-005 Absolute Maximum Ratings1 Rating Maximum Input Power (PIN) +38 Control Voltage (VCTRL) Caution! ESD sensitive device. Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. dBm +6 V Operating Temperature (TOPER) -40 to 100 °C Storage Temperature (TSTOR) -55 to 150 °C RoHS status based on EU Directive 2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Truth Table Path(s) V1 V2 V3 RF1 to ANT RF2 to ANT RF3 to ANT RF4 to ANT High Low Low Low Low High Low Low Low Low High Low V4 Low Low Low High N ot Fo rN ew D Note: High 2.7 V to 6 V; Low 0 V to 0.2 V es ig n Parameter 2 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS130507 FMS2016-005 Typical Measured Performance on Evaluation Board Fo rN ew D es ig n Measurement Conditions: VCTRL = 0 V (low) and 2.5 V (high), TAMBIENT =25 qC unless otherwise stated. N ot Evaluation Board De-Embedding Data (Measured) DS130507 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 6 FMS2016-005 Pad Layout es ig n Part Identification rN ew D Pin 1 2 3 4 5 6 7 8 9 10 11 12 Paddle Name RF1 GND RF3 V3 NC V4 RF4 GND RF2 V2 ANT V1 Ground Description RF port 1 Ground RF port 3 VCTRL3 (ANT to RF3) No connection VCTRL4 (ANT to RF4) RF port 4 Ground RF port 2 VCTRL2 (ANT to RF2) Antenna VCTRL1 (ANT to RF1) Package Drawing N ot Fo QFN 12-Lead 3 mm x 3 mm; NiPdAu finish for military and high reliability applications 4 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS130507 FMS2016-005 ew D es ig n Evaluation Board Layout Bill of Materials Label Component Preferred evaluation board material is 0.25 mm thick ROGERS RT4350. All RF tracks should be 50 : characteristic impedance. rN Board RFC DCC C1 Fo C2 SMA RF connector DC connector Capacitor, 47 pF, 0402 Capacitor, 470 pF, 0603 Tape and Reel N ot Tape and reel information on this material is in accordance with EIA-481-1 except where exceptions are identified. DS130507 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 5 of 6 FMS2016-005 Preferred Assembly Instructions This package is compatible with both lead-free and leaded solder reflow processes as defined within IPC/JEDEC J-STD-020. The maximum package temperature should not exceed 260°C. Handling Precautions es ig n To avoid damage to the devices, care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. ESD Rating These devices should be treated as Class 1A (250 V to 500 V) as defined in JEDEC Standard No. 22-A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. MSL Rating ew Application Notes and Design Data D The device has an MSL rating of Level 1. To determine this rating, prefonditioning was performed to the device per the Pb-Free solder profile defined within IPC/JEDEC J-STD-020, Moisture/Reflow sensitivity classification for non-hermetic solid state surface mount devices. Application Notes and design data, including S-parameters are available on request from www.rfmd.com. Reliability rN A MTTF in excess of 9 million hours at a channel temperature of 150°C is achieved for the process used to manufacture this device. Disclaimers Fo This product is not designed for use in any space-based or life-sustaining/supporting equipment. Ordering Information Description FMS2016-005 7” reel with 1000 pieces FMS2016-005SR 7” reel with 100 pieces N ot Ordering Code 6 of 6 FMS2016-005SQ Sample bag with 25 pieces FMS2016-005-EB Packaged Die Mounted on Evaluation Board 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS130507
FMS2016-005 价格&库存

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