NBB-502_1

NBB-502Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz NBB-502 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz RoHS Compliant & Pb-Free Product Package Style: MPGA, Bowtie, 3x3, Ceramic 3 Features Reliable, Low-Cost HBT Design 19.0dB Gain, +13.0dBm P1dB@2GHz High P1dB of +14.0dBm@6.0GHz Single Power Supply Operation 50 Ω I/O Matched for High Freq. Use Pin 1 Indicator RF OUT 8 Ground 7 6 5 9 4 RF IN 1 2 3 Ground GENERAL PURPOSE AMPLIFIERS (LNAs, HPAs, LINEAR AMPS) Applications Narrow and Broadband Commercial and Military Radio Designs Linear and Saturated Amplifiers Gain Stage or Driver Amplifiers for MWRadio/Optical Designs (PTP/PMP/ LMDS/UNII/VSAT/WLAN/Cellular/DWDM) Functional Block Diagram Product Description The NBB-502 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost, high-performance solution for general purpose RF and microwave amplification needs. This 50 Ω gain block is based on a reliable HBT proprietary MMIC design, providing unsurpassed performance for smallsignal applications. Designed with an external bias resistor, the NBB-502 provides flexibility and stability. The NBB-502 is packaged in a low-cost, surface-mount ceramic package, providing ease of assembly for high-volume tape-and-reel requirements. It is available in either 1,000 or 3,000 piece-per-reel quantities. Ordering Information NBB-502 NBB-502 NBB-502-T1 NBB-502-E NBB-X-K1 Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz Tape & Reel, 1000 Pieces Fully Assembled Evaluation Board Extended Frequency InGaP Amp Designer’s Tool Kit Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A5 DS060124 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3-13 NBB-502 Absolute Maximum Ratings Parameter Rating +20 300 70 200 -45 to +85 -65 to +150 Unit dBm mW mA °C °C °C The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RoHS status based on EUDirective2002/95/EC (at time of this document revision). 3 GENERAL PURPOSE AMPLIFIERS (LNAs, HPAs, LINEAR AMPS) RF Input Power Power Dissipation Device Current Channel Temperature Operating Temperature Storage Temperature Caution! ESD sensitive device. Exceeding any one or a combination of these limits may cause permanent damage. Parameter Overall Small Signal Power Gain, S21 Min. 19.0 16.0 Specification Typ. 20.5 19.0 17.0 ±0.8 1.55:1 1.50:1 1.55:1 Max. Unit dB dB dB dB Condition VD =+3.9V, ICC =35mA, Z0 =50 Ω, TA =+25°C f=0.1GHz to 1.0GHz f=1.0GHz to 2.0GHz f=2.0GHz to 4.0GHz f=1.0GHz to 3.0GHz f=0.1GHz to 4.0GHz f=4.0GHz to 6.0GHz f=6.0GHz to 10.0GHz Gain Flatness, GF Input and Output VSWR Bandwidth, BW Output Power @ -1dB Compression, P1dB Noise Figure, NF Third Order Intercept, IP3 Reverse Isolation, S12 Device Voltage, VD Gain Temperature Coefficient, δGT/δT 3.6 4.2 13.0 14.0 4.0 +23.0 -17.0 3.9 -0.0015 4.2 GHz dBm dBm dB dBm dB V dB/°C BW3 (3dB) f=2.0GHz f=6.0GHz f=3.0GHz f=2.0GHz f=0.1GHz to 10.0GHz MTTF versus Temperature @ ICC =35mA Case Temperature Junction Temperature MTTF 85 109.4 >1,000,000 179 °C °C hours °C/W Thermal Resistance θJC J T – T CASE -------------------------- = θ JC ( ° C ⁄ Watt ) V D ⋅ I CC 3-14 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A5 DS060124