NLB-300-PCK

NLB-300 NLB-300 Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz The NLB-300 cascadable broadband InGaP/GaAs MMIC amplifier is a low-cost, high-performance solution for general purpose RF and microwave amplification needs. This 50Ω gain block is based on a reliable HBT proprietary MMIC design, providing unsurpassed performance for small-signal applications. Designed with an external bias resistor, the NLB-300 provides flexibility and stability. The NLB300 is packaged in a low cost, surface-mount plastic package, providing ease of assembly for high-volume tape-and-reel requirements. Package: Micro-X, 4-pin, Plastic Features ■ Reliable, Low-Cost HBT Design ■ 13.0dB Gain, +11.1dBm P1dB at 2Ghz ■ High P1dB of +14.1dBm at 6.0GHz +12.7dBm at 10.0GHz ■ Single Power Supply Operation ■ 50Ω I/O Matched for High Frequency Use Applications Functional Block Diagram ■ Narrow and Broadband Commercial and Military Radio Designs ■ Linear and Saturated Amplifiers ■ Gain Stage or Driver Amplifiers for MWRadio/Optical Designs (PTP/PMP/LMDS/UNII/VSAT/ WLAN/Cellular/DWDM) Ordering Information NLB-300 Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz NLB-300-T1 Tape & Reel, 1000 Pieces NLB-300-E Fully Assembled Evaluation Board NBB-X-K1 Extended Frequency InGaP Amp Designer’s Tool Kit RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS131015 RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 9 NLB-300 Absolute Maximum Ratings Parameter Rating Unit RF Input Power +20 dBm Power Dissipation 300 mW Device Current 70 mA Channel Temperature 200 °C Operating Temperature -45 to +85 °C Storage Temperature -65 to +150 °C Exceeding any one or a combination of these limits may cause permanent damage. Caution! ESD sensitive device. RoHS (Restriction of Hazardous Substances): Compliant per EU Directive 2011/65/EU. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Nominal Operating Parameters Specification Parameter Unit Min Typ Condition Max General Performance Small Signal Power Gain, S21 VD = +3.8V, ICC = 50mA, Z0 = 50Ω, TA = +25°C 12.0 13.0 dB f = 0.1GHz to 1.0GHz 10.7 dB f = 1.0GHz to 4.0GHz 8.9 dB f = 4.0GHz to 6.0GHz 8.9 dB f = 6.0GHz to 10.0GHz 8.5 dB f = 10.0GHz to 12.0GHz Gain Flatness, GF ±0.1 dB f = 5.0GHz to 10.0GHz Input VSWR 2.2:1 f = 0.1GHz to 4.0GHz 2.8:1 f = 4.0GHz to 7.0GHz 2.0:1 f = 7.0GHz to 12.0GHz 2.2:1 f = 0.1GHz to 4.0GHz 2.9:1 f = 4.0GHz to 7.0GHz 2.4:1 f = 7.0GHz to 12.0GHz 8.5 Output VSWR Output Power at -1dB Compression, P1dB Noise Figure, NF Third Order Intercept, IP3 11.1 dBm f = 2.0GHz 14.1 dBm f = 6.0GHz 12.7 dBm f = 10.0GHz 4.9 dB f = 3.0GHz +28.6 dBm f = 2.0GHz +27.0 Reverse Isolation, S12 Device Voltage, VD Gain Temperature Coefficient, / f = 6.0GHz -16 3.6 3.8 -0.0015 dB 4.2 f = 0.1GHz to 20.0GHz V dB/°C RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS131015 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 9 NLB-300 Specification Parameter Unit Min Typ Condition Max MTTF versus Temperature at ICC = 50mA Case Temperature 85 °C Junction Temperature 113 °C >1,000,000 hours 147 °C/W MTTF Thermal Resistance θJC RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS131015 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 9 NLB-300 Pin Names and Descriptions Pin Name Description 1 RFIN RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. 2 GND Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. 3 RFOUT RF output and bias pin. Biasing is accomplished with an external series resistor and choke inductor to VCC. The resistor is selected to set the DC current into this pin to a desired level. The resistor value is determined by the following equation: Interface Schematic Care should also be taken in the resistor selection to ensure that the current into the part never exceeds maximum datasheet operating current over the planned operating temperature. This means that a resistor between the supply and this pin is always required, even if a supply near 5.0V is available, to provide DC feedback to prevent thermal runaway. Because DC is present on this pin, a DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed. 4 GND Same as pin 2. Package Drawing RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS131015 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 9 NLB-300 Typical Bias Configuration NOTE: Application notes related to biasing circuit, device footprint, and thermal considerations are available on request. Recommended Bias Resistor Values Supply Voltage, VCC (V) 5 8 10 12 15 20 Bias Resistor, RCC (Ω) 22 82 122 162 222 322 RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS131015 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 9 NLB-300 Extended Frequency InGaP Amplifier Designer’s Tool Kit (NBB-X-K1) This tool kit was created to assist in the design-in of the RFMD NBB- and NLB- series InGap HBT gain block amplifiers. Each tool kit contains the following:     5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers 5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers 2 Broadband Evaluation Boards and High Frequency SMA Connectors Broadband Bias Instructions and Specification Summary Index for ease of operation RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS131015 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 9 NLB-300 Tape and Reel Dimensions (all dimensions in millimeters) 14.732 mm (7”) REEL ITEMS FLANGE HUB Diameter Thickness Space Between Flange Outer Diameter Spindle Hole Diameter Key Slit Width Key Slit Diameter SYMBOL B T F O S A D RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. Plastic, Micro-X SIZE (mm) SIZE (inches) 178 +0.25/-4.0 18.4 MAX 12.8 +2.0 76.2 REF 13.716 +0.5/-0.2 1.5 MIN 20.2 MIN 7.0 +0.079/-0.158 0.724 MAX 0.50 +0.08 3.0 REF 0.540 +0.020/-0.008 0.059 MIN 0.795 MIN DS131015 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 7 of 9 NLB-300 Typical Performance RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS131015 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 8 of 9 NLB-300 Note: The s-parameter gain results shown above include device performance as well as evaluation board and connector loss variations. The insertion losses of the evaluation board and connectors are as follows: 1GHz to 4GHz = -0.06dB 5GHz to 9GHz = -0.22dB 10GHz to 14GHz = -0.50dB 15GHz to 20GHz = -1.08dB RoHS Banned Material Content RoHS Compliant: Yes Package Total Weight in Grams (g): 0.024 Compliance Date Code: 0601 Bill of Materials Revision: - Pb Free Category: e3 Bill of Materials Die Molding Compound Lead Frame Die Attach Epoxy Wire Solder Plating Pb 0 0 0 0 0 0 Cd 0 0 0 0 0 0 Hg 0 0 0 0 0 0 Parts Per Million (PPM) Cr VI 0 0 0 0 0 0 PBB 0 0 0 0 0 0 PBDE 0 0 0 0 0 0 This RoHS banned material content declaration was prepared solely on information, including analytical data, provided to RFMD by its suppliers, and applies to the Bill of Materials (BOM) revision noted RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. DS131015 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 9 of 9