NLB-300-T1

NLB-300Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz NLB-300 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz RoHS Compliant & Pb-Free Product Package Style: Micro-X, 4-Pin, Plastic 3 Features Reliable, Low-Cost HBT Design 13.0dB Gain, +11.1dBm P1dB@2GHz High P1dB of +14.1dBm@6.0GHz and +12.7dBm@10.0GHz Single Power Supply Operation 50 Ω I/O Matched for High Freq. Use GENERAL PURPOSE AMPLIFIERS (LNAs, HPAs, LINEAR AMPS) GND 4 MARKING - N3 RF IN 1 3 RF OUT 2 GND Applications Narrow and Broadband Commercial and Military Radio Designs Linear and Saturated Amplifiers Gain Stage or Driver Amplifiers for MWRadio/Optical Designs (PTP/PMP/ LMDS/UNII/VSAT/WLAN/Cellular/DWDM) Functional Block Diagram Product Description The NLB-300 cascadable broadband InGaP/GaAs MMIC amplifier is a lowcost, high-performance solution for general purpose RF and microwave amplification needs. This 50 Ω gain block is based on a reliable HBT proprietary MMIC design, providing unsurpassed performance for small-signal applications. Designed with an external bias resistor, the NLB-300 provides flexibility and stability. The NLB-300 is packaged in a low-cost, surface-mount plastic package, providing ease of assembly for high-volume tape-and-reel requirements. Ordering Information NLB-300Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz NLB-300 NLB-300-T1 NLB-300-E NBB-X-K1 Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz Tape & Reel, 1000 Pieces Fully Assembled Evaluation Board Extended Frequency InGaP Amp Designer’s Tool Kit Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A10 DS070123 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3-19 NLB-300 Absolute Maximum Ratings Parameter Rating +20 300 70 200 -45 to +85 -65 to +150 Unit dBm mW mA °C °C °C Caution! ESD sensitive device. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RoHS status based on EUDirective2002/95/EC (at time of this document revision). 3 GENERAL PURPOSE AMPLIFIERS (LNAs, HPAs, LINEAR AMPS) RF Input Power Power Dissipation Device Current Channel Temperature Operating Temperature Storage Temperature Exceeding any one or a combination of these limits may cause permanent damage. Parameter Overall Small Signal Power Gain, S21 Min. 12.0 Specification Typ. 13.0 10.7 8.9 Max. Unit dB dB dB dB dB dB Condition VD =+3.8V, ICC =50mA, Z0 =50 Ω, TA =+25°C f=0.1GHz to 1.0GHz f=1.0GHz to 4.0GHz f=4.0GHz to 6.0GHz f=6.0GHz to 10.0GHz f=10.0GHz to 12.0GHz f=5.0GHz to 10.0GHz f=0.1GHz to 4.0GHz f=4.0GHz to 7.0GHz f=7.0GHz to 12.0GHz f=0.1GHz to 4.0GHz f=4.0GHz to 7.0GHz f=7.0GHz to 12.0GHz 8.5 Gain Flatness, GF Input VSWR 8.9 8.5 ±0.1 2.2:1 2.8:1 2.0:1 Output VSWR 2.2:1 2.9:1 2.4:1 Output Power @ -1dB Compression, P1dB 11.1 14.1 12.7 dBm dBm dBm dB dBm dB 4.2 V dB/°C f=2.0GHz f=6.0GHz f=10.0GHz f=3.0GHz f=2.0GHz f=6.0GHz f=0.1GHz to 20.0GHz Noise Figure, NF Third Order Intercept, IP3 Reverse Isolation, S12 Device Voltage, VD Gain Temperature Coefficient, δGT/δT 3.6 4.9 +28.6 +27.0 -16 3.8 -0.0015 MTTF versus Temperature @ ICC =50mA Case Temperature Junction Temperature MTTF 85 113 >1,000,000 147 °C °C hours °C/W Thermal Resistance θJC J T – T CASE -------------------------- = θ JC ( ° C ⁄ Watt ) V D ⋅ I CC 3-20 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A10 DS070123 NLB-300 Pin 1 Function RF IN Description RF input pin. This pin is NOT internally DC-blocked. A DC-blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. RF output and bias pin. Biasing is accomplished with an external series resistor and choke inductor to VCC. The resistor is selected to set the DC current into this pin to a desired level. The resistor value is determined by the following equation: Interface Schematic 2 3 GND RF OUT 3 RF OUT ( V CC – V DEVICE ) R = -----------------------------------------I CC Care should also be taken in the resistor selection to ensure that the current into the part never exceeds maximum datasheet operating current over the planned operating temperature. This means that a resistor between the supply and this pin is always required, even if a supply near 5.0V is available, to provide DC feedback to prevent thermal runaway. Because DC is present on this pin, a DC-blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed. RF IN 4 GND Same as pin 2. Package Drawing Symbol B MILLIMETERS Min. Nom. Max. Min. 0.535 REF. 2.39 2.54 2.69 0.436 0.510 0.586 2.19 2.34 2.49 1.91 2.16 2.41 1.32 1.52 1.72 0.10 0.15 0.20 0.535 0.660 0.785 0.05 0.10 0.15 0.65 0.75 0.85 0.85 0.95 1.05 4.53 4.68 4.83 4.73 4.88 5.03 INCHES Nom. Max. 0.021 REF. 0.094 0.100 0.106 0.017 0.020 0.023 0.086 0.092 0.098 0.075 0.085 0.095 0.052 0.060 0.068 0.004 0.006 0.008 0.021 0.026 0.031 0.002 0.004 0.006 0.025 0.029 0.033 0.033 0.037 0.041 0.178 0.184 0.190 0.186 0.192 0.198 D 4M A C N5 1 2 3 4 5 A B C D E F G H J K L M N E 6 0.08 S Seating Plane NOTE: All dimensions are in millimeters, and the dimensions in inches are for reference only. F 1J G 2 H Gauge Plane S 0.1 L3 Kx3 Rev A10 DS070123 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3-21 GENERAL PURPOSE AMPLIFIERS (LNAs, HPAs, LINEAR AMPS) NLB-300 Typical Bias Configuration Application notes related to biasing circuit, device footprint, and thermal considerations are available on request. 3 GENERAL PURPOSE AMPLIFIERS (LNAs, HPAs, LINEAR AMPS) VCC RCC 4 In 1 C block 2 3 L choke (optional) Out C block VDEVICE Recommended Bias Resistor Values Supply Voltage, VCC (V) Bias Resistor, RCC (Ω) 5 22 8 82 10 122 12 162 15 222 20 322 3-22 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A10 DS070123 NLB-300 Extended Frequency InGaP Amplifier Designer’s Tool Kit NBB-X-K1 This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers. Each tool kit contains the following. • • • • 5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers 5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers 2 Broadband Evaluation Boards and High Frequency SMA Connectors Broadband Bias Instructions and Specification Summary Index for ease of operation 3 GENERAL PURPOSE AMPLIFIERS (LNAs, HPAs, LINEAR AMPS) Rev A10 DS070123 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3-23 NLB-300 Tape and Reel Dimensions All Dimensions in Millimeters 3 GENERAL PURPOSE AMPLIFIERS (LNAs, HPAs, LINEAR AMPS) A B D S T O F 14.732 mm (7") REEL ITEMS Diameter FLANGE Thickness Space Between Flange Outer Diameter Spindle Hole Diameter Key Slit Width Key Slit Diameter Plastic, Micro-X SYMBOL SIZE (mm) B 178 +0.25/-4.0 T F O S A D 18.4 MAX 12.8 +2.0 SIZE (inches) 7.0 +0.079/-0.158 0.724 MAX 0.50 +0.08 HUB 76.2 REF 3.0 REF 13.716 +0.5/-0.2 0.540 +0.020/-0.008 1.5 MIN 20.2 MIN 0.059 MIN 0.795 MIN LEAD 1 N3 N3 All dimensions in mm User Direction of Feed N3 N3 4.0 2.00 ± 0.05 SEE NOTE 6 SEE NOTE 1 0.30 ± 0.05 R0.3 MAX. 5.0 +0.1 -0.0 A 1.75 5.0 MIN. B1 Bo 5.50 ± 0.05 SEE NOTE 6 12.0 ± 0.3 Ko SECTION A-A 3.0 Ao A1 8.0 A R0.3 TYP. NOTES: 1. 10 sprocket hole pitch cumulative tolerance ±0.2. 2. Camber not to exceed 1 mm in 100 mm. 3. Material: PS+C. 4. Ao and Bo measured on a plane 0.3 mm above the bottom of the pocket. 5. Ko measured from a plane on the inside bottom of the pocket to the surface of the carrier. 6. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole. Ao = 7.0 MM A1 = 1.8 MM Bo = 7.0 MM B1 = 1.3 MM Ko = 2.1 MM 3-24 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A10 DS070123 NLB-300 S11 versus Frequency, Over Temperature 0.0 S11, +25°C S11, -40°C -2.0 S11, +85°C 12.0 14.0 S21 versus Frequency, Over Temperature 3 GENERAL PURPOSE AMPLIFIERS (LNAs, HPAs, LINEAR AMPS) S21, +25°C S21, -40°C S21, +85°C 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 -4.0 10.0 S21 (dB) -8.0 S21 (dB) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 -6.0 8.0 6.0 -10.0 4.0 -12.0 2.0 -14.0 0.0 Frequency (GHz) Frequency (GHz) S12 versus Frequency, Over Temperature 0.0 S12, +25°C S12, -40°C S12, +85°C -5.0 -10.0 -15.0 -10.0 0.0 -5.0 S22 versus Frequency, Over Temperature S21 (dB) S22 (dB) -15.0 -20.0 -20.0 -25.0 -30.0 -35.0 S11, +25°C -40.0 S11, -40°C S11, +85°C -25.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 -45.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 Frequency (GHz) Frequency (GHz) Output P1dB versus Frequency Across Temperature 16.0 12.0 Noise Frequency versus Frequency at +25°C 14.0 10.0 12.0 Output P1dB (dBm) 10.0 8.0 Noise Figure (dB) 25°C 40°C 85°C 0.0 2.0 4.0 6.0 8.0 10.0 12.0 8.0 6.0 6.0 4.0 4.0 2.0 2.0 0.0 0.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 Frequency (GHz) Frequency (GHz) Rev A10 DS070123 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3-25 NLB-300 Note: The s-parameter gain results shown include device performance as well as evaluation board and connector loss variations. The insertion losses of the evaluation board and connectors are as follows: 1GHz to 4GHz=-0.06dB 3 GENERAL PURPOSE AMPLIFIERS (LNAs, HPAs, LINEAR AMPS) 5GHz to 9GHz=-0.22dB 10GHz to 14GHz=-0.50dB 15GHz to 20GHz=-1.08dB RoHS* Banned Material Content RoHS Compliant: Package total weight in grams (g): Compliance Date Code: Bill of Materials Revision: Pb Free Category: Yes 0.024 0601 e3 Pa r ts Pe r Mi l l i o n (PPM ) Pb 0 0 0 0 0 0 Cd 0 0 0 0 0 0 Hg 0 0 0 0 0 0 Cr VI 0 0 0 0 0 0 PB B 0 0 0 0 0 0 PB DE 0 0 0 0 0 0 B i l l o f Ma te r i a l s Di e Mo l d i ng Co mp o und Le a d F r a me Di e Atta ch Ep o x y Wi r e So l d e r Pl a ti ng Thi s R o HS b a nne d ma te r i a l co nte nt de cl a r a ti o n wa s pr e p a r e d so l e l y o n i nfo r ma ti o n, i ncl ud i ng a na l y ti ca l d a ta , pr o vi d e d to R F M D by i ts sup pl i e r s, a nd a p p l i e s to the B i l l o f Ma te r i a l s (B OM ) r e vi si o n no te d * DIRECTIVE 2002/95/EC OF THE EUROPEAN PARLIAMENT AND OF THE COUNCIL of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment 3-26 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A10 DS070123