QPA0163L

Preliminary RFMD + TriQuint = Qorvo QPA0163L 100MHz to 1300MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER The QPA0163L is a high performance SiGe HBT MMIC low noise amplifier. This device has an internal temperature compensation circuit allowing operation from a supply voltage as low as +2.5V. The QPA0163L has been characterized at VD = +3V for low power and +4V for medium power applications. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation from 800MHz to 1300MHz. SOT-363 Package Features        Functional Block Diagram 100MHz to 1300MHz Operation Internally Matched To 50Ω 800MHz to 1300MHz High Input/Output Intercept Low Noise Figure: 1.5 dB Typical at 900 MHz at +3V Low Power Consumption Single Voltage Supply Internal Temperature Compensation Applications   Receivers, GPS, RFID Cellular, Fixed Wireless, Land Mobile Ordering Information QPA0163LSQ Sample Bag with 25 pieces QPA0163LSR 7" Reel with 100 pieces QPA0163LTR7 7" Reel with 3000 pieces QPA0163LPCK401 800MHz to 1300MHz PCBA with 5-piece Sample Bag Revision DS20160404 © 2016 Qorvo, Inc. - 1 of 10 - Disclaimer: Subject to change without notice www.rfmd.com / www.qorvo.com Preliminary QPA0163L RFMD + TriQuint = Qorvo Absolute Maximum Ratings Parameter Device Voltage(VD) Device Current (ID) RF Input Power Note 1 Storage Temperature ESD Rating (HBM) Moisture Sensitivity Level Rating Units +5.0 45 +10 -55 to +150 TBD MSL1 V mA dBm °C - Notes: 1. Load Condition 1: ZL = 50 Ω 2. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in this table. 3. Bias Conditions should also satisfy the following expression: IDVD