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RDA1005LSR

RDA1005LSR

  • 厂商:

    RFMD(威讯)

  • 封装:

    LFQFN32_EP

  • 描述:

    IC RF AMP GP 50MHZ-4GHZ 32MCM

  • 数据手册
  • 价格&库存
RDA1005LSR 数据手册
RDA1005L RDA1005LDigital Controlled Variable Gain Amplifier 50MHz to 4000MHz, 6 Bit DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 50MHZ TO 4000MHZ, 6 BIT  Broadband 50MHz to 4000MHz Operation GND 2 GND DATA CLK 29 LE 30 GND GND 31 AMPOUT GND 32 28 27 26 25 24 NC 23 NC 3 22 NC ATTOUT 4 21 NC 20 NC AMP Features AMPIN 1 GND Package: MCM, 32-Pin, 5.2mm x 5.2mm 6-bit SPI  6-Bit Digital Step Attenuator  Serial Mode Programming ACG1 5 Gain = -13.5dB to +18dB (0.5dB Step Size) ACG2 6 19 NC ACG3 7 18 NC ACG4 8 17 Vdd 14 15 16 NC 13 PUP 12 NC Small 32-Pin, 5.2mm x 5.2mm, MCM (Footprint Compatible with 5mm x 5mm 32-Pin QFN) 11 GND 10 ATTIN  9 Single +5V Supply GND  High OIP3/P1dB = +36dB/20dBm ACG6  ACG5  DSA E-pad GND Functional Block Diagram Product Description Applications  Cellular, 3G Infrastructure  WiBro, WiMax, LTE  Microwave Radio  High Linearity Power Control RFMD’s RDA1005L is a digitally controlled variable gain amplifier featuring high linearity over the entire gain control range with noise figure less than 6dB in its maximum gain state. The gain of the 6-bit digital step attenuator is programmed with a serial mode control interface. The RDA1005L is packaged in a small 5.2mm x 5.2mm leadless laminate MCM which contains plated through thermal vias for ultra-low thermal resistance. The footprint for this thermal vias for ultra low thermal resistance. The footprint for this module is directly compatible with a 5mm x 5mm QFN. This module is easy to use with no external matching components required. Ordering Information RDA1005LSQ RDA1005LSR RDA1005LTR7 RDA1005LTR13 RDA1005LPCK-410 Sample bag with 25 pieces 7” Sample reel with 100 pieces 7” Reel with 750 pieces 13” Reel with 2500 pieces 50MHz to 4000MHz PCBA with 5-piece sample bag Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT  SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS GaN HEMT BiFET HBT Si BJT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc. DS120828 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. 1 of 10 RDA1005L Absolute Maximum Ratings Parameter Supply Voltage Rating Unit +5.5 VDC DC Supply Current 110 mA Power Dissipation 605 mW Max RF Input Power 20 dBm Operating Temperature (TCASE) -40 to +85 °C Storage Temperature -40 to +150 °C 165* °C 1000 (Class 1C) V Junction Temp ESD Rating (HBM) Moisture Sensitivity Level Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and
RDA1005LSR 价格&库存

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