RF2046

RF2046 0 Typical Applications • Broadband, Low Noise Gain Blocks • IF or RF Buffer Amplifiers • Driver Stage for Power Amplifiers Product Description The RF2046 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 3000MHz. The device is self-contained with 50 Ω input and output impedances and requires only two external DC biasing elements to operate as specified. With a goal of enhanced reliability, the extremely small Micro-X ceramic package offers significantly lower thermal resistance than similar size plastic packages. 0.025 ± 0.002 3 GENERAL PURPOSE AMPLIFIER • Final PA for Low Power Applications • High Reliability Applications • Broadband Test Equipment 0.052 0.041 0.070 sq. 45° ± 1° 0.068 ± 0.002 0.005 ± 0.002 0.200 Sq. Typ. 0.020 ± 0.002 0.015 +0.002 -0.001 0.040 ± 0.002 NOTES: 1. Shaded lead is pin 1. 2. Darkened areas are metallization. 3. Dimension applies to ceramic lid minus epoxy coating. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Package Style: Micro-X Ceramic Features • DC to 3000MHz Operation • Internally matched Input and Output • 22dB Small Signal Gain GND 4 MARKING - C6 • 3.0dB Noise Figure • 10mW Linear Output Power • Single Positive Power Supply RF IN 1 3 RF OUT Ordering Information 2 GND RF2046 General Purpose Amplifier RF2046PCBA-41XFully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A11 050207 4-173 RF2046 Absolute Maximum Ratings Parameter Input RF Power Operating Ambient Temperature Storage Temperature Rating +13 -40 to +85 -60 to +150 Unit dBm °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Overall Frequency Range Gain Min. Specification Typ. Max. DC to 3000 22.7 22.1 21.0 19.2 ±0.9 2.7