RF2047

Preliminary 4 Typical Applications • Broadband, Low Noise Gain Blocks • IF or RF Buffer Amplifiers • Driver Stage for Power Amplifiers RF2047 GENERAL PURPOSE AMPLIFIER • Final PA for Low Power Applications • High Reliability Applications • Broadband Test Equipment Product Description The RF2047 is a general purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50 Ω input and output impedances and requires only two external DC biasing elements to operate as specified. With a goal of enhanced reliability, the extremely small Micro-X ceramic package offers significantly lower thermal resistance than similar size plastic packages. 45° + 1° 4 0.055 + 0.005 0.020 + 0.002 0.040 + 0.002 0.070 sq. NOTES: 1. Shaded lead is pin 1. 2. Darkened areas are metallization. 0.200 sq. Typ Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü Package Style: Micro-X Ceramic GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features • DC to 6000MHz Operation • Internally matched Input and Output • 16dB Small Signal Gain • +26dBm Output IP3 GND 4 MARKING - C7 • +12dBm Output Power • Excellent Gain Flatness RF IN 1 3 RF OUT Ordering Information 2 GND RF2047 RF2047 PCBA General Purpose Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A4 010110 4-25 GENERAL PURPOSE AMPLIFIERS RF2047 Absolute Maximum Ratings Parameter Supply Current Input RF Power Operating Ambient Temperature Storage Temperature Preliminary Rating 75 +15 -40 to +85 -60 to +150 Unit mA dBm °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Overall Specification Min. Typ. Max. DC to 6000 >6 16.3 16.0 15.3 15.0 14.8 14.0 ±0.5 4.2 1.8:1 1.6:1 1.7:1 2.2:1 +26 +11.9 19.4 196 112 1.5x104 9.3x106 2.9x1011 3.0 3.6 40 4.0 Unit MHz GHz dB dB dB dB dB dB dB dB Condition T=25 °C, VD =3.6V, ICC =40mA 4 GENERAL PURPOSE AMPLIFIERS Frequency Range 3dB Bandwidth Gain 14.0 Gain Flatness Noise Figure Input VSWR Output VSWR Output IP3 Output P1dB Reverse Isolation dBm dBm dB °C/W °C years years years V mA Thermal ThetaJC Maximum junction temperature Mean Time Between Failures Mean Time Between Failures Mean Time Between Failures Freq=100MHz Freq=1000MHz Freq=2000MHz Freq=3000MHz Freq=4000MHz Freq=6000MHz 100MHz to 2000MHz Freq=2000MHz In a 50 Ω system, DC to 3000MHz In a 50 Ω system, 3000MHz to 6000MHz In a 50 Ω system, DC to 3000MHz In a 50 Ω system, 3000MHz to 6000MHz Freq=2000MHz±50kHz, PTONE =-10dBm Freq=2000MHz Freq=2000MHz ICC =40mA, PDISS =135mW TAMB =+85°C TAMB =+25°C TAMB =-40°C With 22 Ω bias resistor At pin 3 with ICC =40mA Power Supply Device Operating Voltage Operating Current 4-26 Rev A4 010110 Preliminary Pin 1 Function RF IN Description RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. Ground connection. Keep traces physically short and connect immediately to ground plane for best performance. RF output and bias pin. Biasing is accomplished with an external series resistor and choke inductor to VCC. The resistor is selected to set the DC current into this pin to a desired level. The resistor value is determined by the following equation: RF2047 Interface Schematic 2 3 GND RF OUT RF OUT ( V SUPPLY – V DEVICE ) R = -----------------------------------------------------I CC Care should also be taken in the resistor selection to ensure that the current into the part never exceeds 75 mA over the planned operating temperature. This means that a resistor between the supply and this pin is always required, even if a supply near 3.6V is available, to provide DC feedback to prevent thermal runaway. Because DC is present on this pin, a DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed. Same as pin 2. RF IN 4 GENERAL PURPOSE AMPLIFIERS 4 GND Application Schematic VCC 10 n F 22 pF 4 47 nH 22 pF RF IN 1 3 RBIAS RF OUT 22 pF 2 Rev A4 010110 4-27 RF2047 Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) P1 P1-1 1 2 NC 3 4 VCC GND Drawing 204X400R1 22Ω L1 100 nH 1 3 C2 100 pF C3 100 pF Preliminary VCC P1-1 C4 1 µF 4 GENERAL PURPOSE AMPLIFIERS RF IN J1 50 Ω µ strip C1 100 pF 50Ω µ strip RF OUT J2 2 Evaluation Board Layout Board Size 1.195" x 1.000" 4-28 Rev A4 010110 Preliminary Gain versus Frequency Across Temperature ICC = 40 mA -40 C 26 C 16.00 85 C 15.00 RF2047 16.00 17.00 Output P1dB versus Frequency Across Temperature ICC = 40 mA -40 C 26 C 85 C Gain (dB) 15.00 Output P1dB (dBm) 14.00 13.00 14.00 12.00 13.00 11.00 4 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00 10.00 0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00 12.00 0.10 Frequency (GHz) Frequency (GHz) 28.00 Output IP3 versus Frequency Across Temperature ICC = 40 mA -40 C 26 C 10.00 Noise Figure versus Frequency Across Temperature ICC = 40 mA -40 C 26 C 85 C 9.00 27.00 85 C 8.00 3rd Order Intercept Power (dBm) Noise Figure (dB) 26.00 7.00 25.00 6.00 5.00 24.00 4.00 23.00 3.00 22.00 0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00 2.00 0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00 Frequency (GHz) Frequency (GHz) 2.00 Input VSWR versus Frequency Across Temperature ICC = 40 mA -40 C 26 C 85 C 2.00 Output VSWR versus Frequency Across Temperature ICC = 40 mA -40 C 26 C 85 C VSWR 1.50 VSWR 1.50 1.00 0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00 1.00 0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00 Frequency (GHz) Frequency (GHz) Rev A4 010110 4-29 GENERAL PURPOSE AMPLIFIERS RF2047 20.00 Preliminary Reverse Isolation versus Frequency Across Temperature, ICC = 40 mA -40 C 26 C 19.00 85 C Reverse Isolation (dB) 18.00 17.00 4 GENERAL PURPOSE AMPLIFIERS 16.00 15.00 0.10 0.69 1.28 1.87 2.46 3.05 3.64 4.23 4.82 5.41 6.00 Frequency (GHz) 4-30 Rev A4 010110