RF2103P_06

RF2103P 0 RoHS Compliant & Pb-Free Product Typical Applications • Digital Communication Systems • Portable Battery-Powered Equipment • Spread-Spectrum Communication Systems • Commercial and Consumer Systems • Driver for Higher Power Linear Applications • Base Station Equipment Product Description The RF2103P is a medium power linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear RF amplifier in UHF radio transmitters operating between 450MHz and 1000MHz. It may also be used as a driver amplifier in higher power applications. The device is self-contained with the exception of the output matching network, power supply feed line, and bypass capacitors, and it produces an output power level of 750mW (CW). The device can be used in 3 cell battery applications. The maximum CW output at 3.6V is 175mW. The unit has a total gain of 31dB, depending upon the output matching network. 0.156 0.148 .018 .014 MEDIUM POWER LINEAR AMPLIFIER 0.010 0.004 0.347 0.339 0.050 0.252 0.236 0.059 0.057 8° MAX 0° MIN 0.0500 0.0164 0.010 0.007 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Package Style: SOIC-14 Features • 450MHz to 1000MHz Operation • Up to 750mW CW Output Power • 31dB Small Signal Gain RF IN 1 GND 2 GND 3 PD 4 VCC1 5 VCC2 6 PRE AMP PWR 7 PRE AMP FPA 14 RF OUT 13 RF OUT 12 GND 11 GND 10 GND 9 RF OUT 8 RF OUT • Single 2.7V to 7.5V Supply • 47% Efficiency • Digitally Controlled Power Down Mode BIAS CIRCUITS Ordering Information RF2103P Medium Power Linear Amplifier RF2103PPCBA-41XFully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev B2 060202 2-7 RF2103P Absolute Maximum Ratings Parameter Supply Voltage Power Down Voltage (VPD) DC Supply Current Input RF Power Output Load VSWR Operating Case Temperature Operating Ambient Temperature Storage Temperature Rating -0.5 to +7.5 -0.5 to +5 350 +12 10:1 -40 to +100 -40 to +85 -40 to +150 Unit VDC V mA dBm °C °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Overall Frequency Range Maximum Output Power Maximum Output Power Second Harmonic Third Harmonic Output Noise Power Input Impedance Input VSWR Output Impedance Specification Min. Typ. Max. Unit Condition T=25 °C, VCC =5.8V, VPD =5.0V, ZLOAD =18 Ω, PIN =0dBm, Freq=915MHz 450 to 1000 +28.8 +26.5 -24 -30