RF2104

RF2104 2 Typical Applications • 900MHz ISM Band Applications • 400MHz Industrial Radios • Driver for Higher Power Applications • Portable Battery-Powered Equipment • Commercial and Consumer Systems • Base Station Equipment MEDIUM POWER AMPLIFIER 2 POWER AMPLIFIERS Product Description The RF2104 is a medium power amplifier IC. The device is manufactured on a low cost Silicon process, and has been designed for use as the final RF amplifier in UHF radio transmitters operating between 400MHz and 1000MHz. It may also be used as a driver amplifier in higher power applications. The device is packaged in a plastic quad-batwing 16-lead package, and is self-contained with the exception of the output matching network, power supply feed line, and bypass capacitors. It produces an output power level of up to 500mW (CW) at 3.6V. The device can be used in 3 cell battery applications. The maximum CW output at 3.6V is +27dBm. The unit has a total gain of 26dB, depending upon the output matching network. Optimum Technology Matching® Applied 0.020 REF 0.157 0.150 0.020 0.014 -A0.008 0.004 0.393 0.386 0.034 REF 0.068 0.064 0.244 0.229 8° MAX 0° MIN 0.034 0.009 0.016 0.007 0.068 0.053 ü Package Style: CJ2BAT0 Si BJT Si Bi-CMOS GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features • 400MHz to 1000MHz Operation • Up to 500mW CW Output Power • 26dB Small Signal Gain • 40dB Gain Control Range • Single 2.7V to 3.6V Supply • 40% Efficiency VCC1 1 GND 2 GND 3 VCC2 4 RF IN 5 GND 6 GND 7 PC 8 16 GND 15 GND 14 GND 13 RF OUT 12 RF OUT 11 GND 10 GND 9 GND BIAS Ordering Information RF2104 Medium Power Amplifier RF2104 PCBA-L Fully Assembled Evaluation Board (830MHz) RF2104 PCBA-H Fully Assembled Evaluation Board (915MHz) RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Functional Block Diagram Rev B4 010507 2-11 RF2104 Absolute Maximum Ratings Parameter Supply Voltage Gain Control Voltage (VPC) DC Supply Current Input RF Power Output Load VSWR Operating Ambient Temperature Storage Temperature Rating -0.5 to +6.0 -0.5 to +3.0 500 +12 20:1 -40 to +85 -40 to +150 Unit VDC V mA dBm °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Parameter Overall Frequency Range Bandwidth Maximum Output Power Maximum Output Power Output Third Order Intercept Power Added Efficiency Small Signal Gain Gain Control Range Second Harmonic Third Harmonic Noise Figure Input Impedance Input Return Loss Input Return Loss Output Impedance Output Return Loss Load Impedance Specification Min. Typ. Max. Unit Condition T=25°C, VCC =3.6V, VPC =2.5V, ZLOAD =10 Ω, PIN =+6dBm, Freq=850MHz 24 400 to 1000 150 +27 +27 +36 40 25 35 -50 -50 5.5 50 -20 -10 50 -13 5+j0 2.7 to 3.6 250 1 4 0