RF2105LPCBA

RF2105L 2 Typical Applications • 900 MHz ISM Band Applications • 400 MHz Industrial Radios • Digital Communication Systems • Driver Stage for Higher Power Applications • Commercial and Consumer Systems • Portable Battery-Powered Equipment HIGH POWER LINEAR UHF AMPLIFIER 2 POWER AMPLIFIERS 0.025 0.080 Product Description The RF2105L is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital cellular phone transmitters or ISM applications requiring linear amplification. It is packaged in a 16-lead ceramic package with a backside ground. The device is self-contained with the exception of the output matching network and power supply feed line. 0.258 0.242 1 0.075 0.065 0.033 0.017 0.150 0.050 0.258 0.242 R0.008 0.208 sq. 0.192 0.050 0.022 0.018 0.080 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü Package Style: QLCC-16 Alumina GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features • Single 2.7V to 6.5V Supply • Up to 1.2W CW Output Power • 33dB Small Signal Gain • 48% Efficiency 1 VCC3 2 VCC1 3 GND 4 PD 5 6 RF IN 16 15 14 13 RF OUT 12 GND 11 RF OUT 10 RF OUT RF OUT VCC2 NC NC BIAS CIRCUIT • Digitally Controlled Power Down Mode • Small Package Outline (0.25" x 0.25") Ordering Information RF2105L RF2105L PCBA High Power Linear UHF Amplifier Fully Assembled Evaluation Board 7 GND 8 NC 9 NC Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev B3 010720 2-19 RF2105L Absolute Maximum Ratings Parameter Supply Voltage (VCC) Power Down Voltage (VPD) DC Supply Current Input RF Power Output Load Operating Case Temperature Operating Ambient Temperature Storage Temperature Rating -0.5 to +8.5 -0.5 to +6.5 700 +12 20:1 -40 to +100 -40 to +85 -40 to +150 Unit VDC VDC mA dBm °C °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Parameter Overall Frequency Range Maximum CW Output Power Specification Min. Typ. Max. Unit Condition T=25 °C, VCC =5.8V, VPD =5.8V, ZLOAD =9 Ω, PIN =0dBm, Freq=840MHz 430 to 930 +30.8 MHz dBm CW Efficiency at Max Output DC Current at Max Output Small-signal Gain Second Harmonic Third Harmonic Fourth Harmonic Input VSWR Input Impedance +29.3 +28.5 +30 +27.8 +27 48 450 33 -23 -36 -35