RF2115L

RF2115L

  • 厂商:

    RFMD(威讯)

  • 封装:

  • 描述:

    RF2115L - HIGH POWER UHF AMPLIFIER - RF Micro Devices

  • 详情介绍
  • 数据手册
  • 价格&库存
RF2115L 数据手册
RF2115L 2 Typical Applications • Analog Communication Systems • Analog Cellular Systems (AMPS & TACS) • 900MHz Spread-Spectrum Systems • 400MHz Industrial Radios • Driver Stage for Higher Power Applications • Portable Battery-Powered Equipment HIGH POWER UHF AMPLIFIER 2 POWER AMPLIFIERS Product Description The RF2115L is a high power amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters or ISM applications operating at 915MHz. The device is packaged in a 16-lead ceramic quad leadless chip carrier with a backside ground. The device is self-contained with the exception of the output matching network and power supply feed line. A two-bit digital control provides 4 levels of power control, in 10dB steps. 1 .258 .242 .075 .065 .150 .050 .258 .242 7 .098 R.008 .033 .017 .050 .025 R F2 11 Features • 48% Efficiency Ordering Information RF2115L RF2115L PCBA RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA .022 .018 .098 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ro du ct ü Package Style: QLCC-16 GaAs HBT SiGe HBT GaAs MESFET Si CMOS P ad ed RF OUT NC 15 14 13 RF OUT 12 GND 11 RF OUT 10 RF OUT 9 NC 8 G10 VCC2 NC 1 VCC3 2 VCC1 3 GND 4 PD 5 16 • Single 5V to 6.5V Supply • Up to 1.0W CW Output Power • 33dB Small Signal Gain • Digitally Controlled Output Power • Small Package Outline (0.25" x 0.25") S ee U pg r BIAS CIRCUIT GAIN CONTROL 7 G20 6 Functional Block Diagram RF IN High Power UHF Amplifier Fully Assembled Evaluation Board Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev B1 010329 2-39 RF2115L Absolute Maximum Ratings Parameter Supply Voltage (VCC) Power Down Voltage (VPD) Control Voltage (G10, G20) DC Supply Current Input RF Power Output Load Operating Case Temperature Operating Ambient Temperature Storage Temperature Rating -0.5 to +8.5 -0.5 to +5.0 -0.5 to +5.5 700 +12 20:1 -40 to +100 -40 to +85 -40 to +150 Unit VDC V V mA dBm °C °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Parameter Overall Frequency Range Maximum CW Output Power Specification Min. Typ. Max. Unit Condition T=25 °C, VCC =5.8V, VPD =5.0V, ZLOAD =9 Ω, PIN =0dBm, Freq=840MHz ro du ct +36 +23 +13 +6 600 175 90 50 80 0.2 0.2 10 Total CW Efficiency at Maximum Output Small-signal Gain Second Harmonic Third Harmonic Fourth Harmonic Input VSWR Input Impedance 40 +30 +29.5 +28.5 48 33 -23 -36 -35
RF2115L
物料型号: - 型号为RF2115L,是一款高功率放大器IC。

器件简介: - RF2115L基于先进的砷化镓异质结双极晶体管(HBT)工艺制造,设计用于作为模拟蜂窝电话发射器或915MHz ISM应用的最终射频放大器。该设备采用16引脚陶瓷四引脚无引线芯片载体封装,背面接地。除了输出匹配网络和电源供电线路外,设备自成一体。通过两位数字控制提供4级功率控制,步长为10dB。

引脚分配: - 1号引脚:VCC2,第二级放大器(驱动级)的正电源。 - 2号引脚:VCC3,活性偏置电路的正电源。 - 3号引脚:VCC1,第一级(输入)放大器的正电源。 - 4号引脚:GND,接地连接。 - 5号引脚:PD,电源控制电压。 - 6号引脚:RF IN,放大器射频输入。 - 7号引脚:G20,射频输出功率增益控制MSB。 - 8号引脚:G10,射频输出功率增益控制LSB。 - 10-14号引脚:RF OUT,放大器射频输出。 - 15-16号引脚:NC,未内部连接。 - 封装基底:GND,设备的主接地接触。

参数特性: - 单5V至6.5V供电。 - 最大连续波输出功率高达1.0W。 - 小信号增益33dB。 - 效率48%。 - 数字控制输出功率。 - 小型封装外形(0.25" x 0.25")。

功能详解: - 该放大器适用于430MHz工业无线电、更高功率应用的驱动级以及便携式电池供电设备。

应用信息: - 典型应用包括模拟通信系统、模拟蜂窝系统(AMPS和TACS)以及900MHz展宽频谱系统。

封装信息: - 封装风格为QLCC-16,即16引脚陶瓷四引脚无引线芯片载体。
RF2115L 价格&库存

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