RF2115L

RF2115L 2 Typical Applications • Analog Communication Systems • Analog Cellular Systems (AMPS & TACS) • 900MHz Spread-Spectrum Systems • 400MHz Industrial Radios • Driver Stage for Higher Power Applications • Portable Battery-Powered Equipment HIGH POWER UHF AMPLIFIER 2 POWER AMPLIFIERS Product Description The RF2115L is a high power amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters or ISM applications operating at 915MHz. The device is packaged in a 16-lead ceramic quad leadless chip carrier with a backside ground. The device is self-contained with the exception of the output matching network and power supply feed line. A two-bit digital control provides 4 levels of power control, in 10dB steps. 1 .258 .242 .075 .065 .150 .050 .258 .242 7 .098 R.008 .033 .017 .050 .025 R F2 11 Features • 48% Efficiency Ordering Information RF2115L RF2115L PCBA RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA .022 .018 .098 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ro du ct ü Package Style: QLCC-16 GaAs HBT SiGe HBT GaAs MESFET Si CMOS P ad ed RF OUT NC 15 14 13 RF OUT 12 GND 11 RF OUT 10 RF OUT 9 NC 8 G10 VCC2 NC 1 VCC3 2 VCC1 3 GND 4 PD 5 16 • Single 5V to 6.5V Supply • Up to 1.0W CW Output Power • 33dB Small Signal Gain • Digitally Controlled Output Power • Small Package Outline (0.25" x 0.25") S ee U pg r BIAS CIRCUIT GAIN CONTROL 7 G20 6 Functional Block Diagram RF IN High Power UHF Amplifier Fully Assembled Evaluation Board Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev B1 010329 2-39 RF2115L Absolute Maximum Ratings Parameter Supply Voltage (VCC) Power Down Voltage (VPD) Control Voltage (G10, G20) DC Supply Current Input RF Power Output Load Operating Case Temperature Operating Ambient Temperature Storage Temperature Rating -0.5 to +8.5 -0.5 to +5.0 -0.5 to +5.5 700 +12 20:1 -40 to +100 -40 to +85 -40 to +150 Unit VDC V V mA dBm °C °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Parameter Overall Frequency Range Maximum CW Output Power Specification Min. Typ. Max. Unit Condition T=25 °C, VCC =5.8V, VPD =5.0V, ZLOAD =9 Ω, PIN =0dBm, Freq=840MHz ro du ct +36 +23 +13 +6 600 175 90 50 80 0.2 0.2 10 Total CW Efficiency at Maximum Output Small-signal Gain Second Harmonic Third Harmonic Fourth Harmonic Input VSWR Input Impedance 40 +30 +29.5 +28.5 48 33 -23 -36 -35