RF2125PCBA

RF2125 2 Typical Applications • PCS Communication Systems • Digital Communication Systems • DECT Cordless Applications • Commercial and Consumer Systems • Portable Battery Powered Equipment HIGH POWER LINEAR AMPLIFIER 2 POWER AMPLIFIERS Product Description The RF2125 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stations requiring linear amplification operating between 1500MHz and 2200MHz. It will also function as a high efficiency amplifier for constant envelope applications such as DECT. The device is packaged in an 8-lead ceramic package with a backside ground. The device is self-contained with the exception of the output matching network and power supply feed line. It produces a typical output power level of 1W. .315 .305 .057 MAX 1 .050 ro du ct Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features • Single 2.7V to 7.5V Supply • 1W Output Power • 14dB Gain • 45% Efficiency • Power Down Mode • 1500MHz to 2200MHz Operation RF IN 1 RF IN 2 PC 3 U pg r S ee BIAS CIRCUIT ad ed 8 RF OUT 7 RF OUT 6 RF OUT 5 RF OUT P VCC 4 Ordering Information RF2125 RF2125 PCBA High Power Linear Amplifier Fully Assembled Evaluation Board PACKAGE BASE GND Functional Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA R F2 12 4°MAX 0°MIN .017 .013 Package Style: SOP-8-C 5P .006 .004 .166 SQ .017 .013 .004 .000 .180 SQ MAX Metal lid and base, gold plated Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A7 010112 2-61 RF2125 Absolute Maximum Ratings Parameter Supply Voltage (VCC) Power Control Voltage (VPC) DC Supply Current Input RF Power Output Load Operating Case Temperature Operating Ambient Temperature Storage Temperature Rating -0.5 to +7.5 -0.5 to +3.6V 450 +20 20:1 -40 to +100 -40 to +85 -40 to +150 Unit VDC V mA dBm °C °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Parameter Overall Frequency Range Maximum Output Power Maximum Output Power Maximum Output Power Total Power Added Efficiency Total Power Added Efficiency Total Power Added Efficiency Small-signal Gain Second Harmonic Third Harmonic Fourth Harmonic Isolation Input VSWR Specification Min. Typ. Max. Unit Condition T=25 °C, VCC =6.0V, VPC =3.5V, ZLOAD =12 Ω, PIN = 0dBm, Freq=1885MHz, Idle current=180mA +29.3 42 12 ro du ct 3.5 440 10 1500 to 2200 +28.5 +29.5 +30 45 45 45 14 -40 -45 -35 15 1.5:1 MHz dBm dBm dBm % % % dB dBc dBc dBc dB Two-tone Specification IM3 IM5 IM7 -25 Power Control VPC PC Current Power Control “OFF” ad ed -30 -35 -45 3.3 1 2 0.5 1.5 P Power Supply Power Supply voltage Supply Current Power Down Current U pg r 0.2 270 2.7 to 7.5 360 0.5 2-62 S ee R F2 12 dBc dBc dBc V mA mA V V mA µA VCC =3.6V, PIN =+17dBm VCC =4.8V, PIN =+17dBm VCC =6.0V, PIN =+17dBm Maximum output, VCC =3.6V Maximum output, VCC =4.8V Maximum output, VCC =6.0V VPC =0.2V With external matching network; see application schematic POUT =+23.5dBm for each tone POUT =+24dBm for each tone POUT =+24dBm for each tone To obtain 180mA idle current VPC =2.0V VPC =3.5V Threshold voltage at device input POUT =+30dBm, VCC =6.0V VPC =0.2V 5P Rev A7 010112 RF2125 Pin 1 Function RF IN Description RF input. This input is DC coupled, so an external blocking capacitor is required if this pin is connected to a DC path. An optimum match to 50 Ω is obtained by providing an external series capacitor of 4.3pF and then a shunt capacitor of 3.3pF; see the application schematic. Those values are typical for 1880MHz; other values may be required for other frequencies. Same as pin 1. Power control pin. For obtaining maximum performance the voltage on this pin can be used to set correct bias level. In a typical application this is implemented by a feedback loop. The feedback can be based on the actual supply current of the device, i.e., maintaining a fixed current level, or it can be based on the RF output power level to maintain a fixed RF power level (Automatic Level Control loop). A voltage of 0.5V or lower brings the part into power down state. Power supply pin for the bias circuits. External low frequency bypass capacitors should be connected if no other low frequency decoupling is nearby. RF output and bias for the output stage. The power supply for the output transistor needs to be supplied to this pin. This can be done through a quarter wave length microstrip line that is RF grounded at the other end, or through an RF inductor that supports the required DC currents. Optimum load impedance is achieved by providing a shunt capacitor of 3.0pF and a series capacitor of 3.9pF; see the application schematic. Those values are typical for 1880MHz; other values may be required for other frequencies. Since there are several output pins available, which are internally connected, one pin can be used for connecting the bias, another for connecting a (third) harmonic trap filter, and the other pins for the RF output. Same as pin 5. Interface Schematic 4 5 VCC RF OUT Same as pin 5. Ground connection. The backside of the package should be connected to the ground plane through a short path, i.e., vias under the device may be required. RF IN ad ed Application Schematic 1880MHz 5.1 pF P ro du ct 6 7 8 Pkg Base RF OUT RF OUT RF OUT GND Same as pin 5. 1 2 3 4 U pg r 3.3 pF R F2 12 8 3.9 pF 7 3.3 pF BIAS CIRCUIT 6 5 PACKAGE BASE 33 nH RF OUT VPD 100 nF S ee VCC 100 nF 100 pF Rev A7 010112 5P 2-63 POWER AMPLIFIERS 2 3 RF IN PC 2 RF2125 Evaluation Board Schematic 1880MHz (Download Bill of Materials from www.rfmd.com.) 2 POWER AMPLIFIERS RF IN J1 50 Ω µstrip C2 5.1 pF C1 3.3 pF 1 2 3 4 8 7 6 5 PACKAGE BASE L1 33 nH C4 3.9 pF C3 3.3 pF RF OUT 50 Ω µstrip J2 P1-3 C7 1 nF BIAS CIRCUIT P1 P1-1 1 2 VCC GND PC C9 100 nF C8 1 nF C5 1 µF C6 100 pF R F2 12 Board Thickness 0.031”; Board Material FR-4 2-64 S ee U pg r ad ed P ro du ct Evaluation Board Layout 1.5” x 1.0” 5P P1-1 P1-3 3 2125401 Rev A PTI Package Rev A7 010112 RF2125 The data below is valid only under small-signal conditions. The device needs to be biased in Class A, with the output power below the 1-dB compression point. For large signal operation this data may be used as a starting point, but further tuning to optimize performance will be required. Voltage and idle current have only very limited effect on the input and output impedances, hence only one plot is shown, valid for VCC =5 to 7V, and ICC =50 to 250mA. 2 26 24 22 20 18 16 14 12 10 8 6 4 2 0 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 DB(GMax) Vcc=5.0V, Icc=50mA DB(GMax) Vcc=6.5V, Icc=200mA DB(|S[2,1]|) Vcc=5.0V, Icc=50mA DB(|S[2,1]|) Vcc=6.5V, Icc=200mA Gain (dB) Frequency (GHz) RF2125 Input / Output Impedance, Class A bias 1.0 2.0 R F2 12 S11 S22 2.5 GHz 0.2 1 GHz 0.2 0.4 0.6 0.8 1.0 2.0 3.0 0 ad ed P 10.0 4.0 5.0 -0 .4 U pg r -0. 6 -0.8 .0 -2 Swp Min 1GHz Rev A7 010112 S ee -1.0 -4. 0 -5.0 -0.2 -10.0 1 GHz ro du ct 2.5 GHz 0. 4 0. 6 Swp Max 2.5GHz -33 0.8 DB(|S[1,2]|) -34 4. 0 5.0 S12 (dB) 3.0 -35 10.0 -36 -37 1 1.5 2 2.5 5P RF2125 S12 FREQUENCY (GHz) 2-65 POWER AMPLIFIERS RF2125 Gain -3 .0 2 POWER AMPLIFIERS 2-66 RF2125 S ee U pg r ad ed P ro du ct R F2 12 5P Rev A7 010112