RF2125PPCBA

RF2125P 2 Typical Applications • PCS Communication Systems • Digital Communication Systems • DECT Cordless Applications • Commercial and Consumer Systems • Portable Battery-Powered Equipment HIGH POWER LINEAR AMPLIFIER 2 POWER AMPLIFIERS Product Description The RF2125P is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in digital PCS phone transmitters and base stations requiring linear amplification operating between 1500MHz and 2200MHz. It will also function as a high efficiency amplifier for constant envelope applications such as DECT. The device is packaged in an 8-lead plastic package with a backside ground. The device is selfcontained with the exception of the output matching network and power supply feed line. It produces a typical output power level of 1W. 3.90 ± 0.10 -A0.43 ± 0.05 0.05 ± 0.05 Exposed Heat Sink 4.90 ± 0.10 1.27 6.00 ± 0.20 Dimensions in mm. 8° MAX 0° MIN 0.60 ± 0.15 0.22 ± 0.03 1.40 ± 0.10 2.70 ± 0.10 1.70 ± 0.10 NOTES: 1. Shaded lead is pin 1. 2. Lead coplanarity - 0.10 with respect to datum "A". Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü Package Style: SOIC-8 Slug GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features • Single 2.7V to 7.5V Supply • 1W Output Power • 14dB Gain • 45% Efficiency • Power Down Mode • 1500MHz to 2200MHz Operation RF IN 1 RF IN 2 PC 3 VCC 4 PACKAGE BASE GND 8 RF OUT 7 RF OUT 6 RF OUT 5 RF OUT BIAS CIRCUIT Ordering Information RF2125P RF2125P PCBA High Power Linear Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A4 010720 2-67 RF2125P Absolute Maximum Ratings Parameter Supply Voltage (VCC) Power Control Voltage (VPC) DC Supply Current Input RF Power Output Load VSWR Operating Ambient Temperature Storage Temperature Rating -0.5 to +7.5 -0.5 to +5V 450 +20 20:1 -40 to +85 -40 to +100 Unit VDC V mA dBm °C °C Refer to “Handling of PSOP and PSSOP Products” on page 16-15 for special handling information. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Parameter Overall Frequency Range Maximum Output Power Maximum Output Power Maximum Output Power Total Power Added Efficiency Total Power Added Efficiency Total Power Added Efficiency Small-signal Gain Second Harmonic Third Harmonic Fourth Harmonic Isolation Input VSWR Specification Min. Typ. Max. Unit Condition T=25 °C, VCC =6.0V, VPC =5.0V, ZLOAD =12 Ω, Pin = 0dBm, Freq=1885MHz, Idle current=180mA 1500 to 2200 +28.5 +29.0 +29.5 +30 45 45 45 14 -40 -45 -35 15 1.5:1 MHz dBm dBm dBm % % % dB dBc dBc dBc dB 40 12 VCC =3.6V, PIN =+17dBm VCC =4.8V, PIN =+17dBm VCC =6.0V, PIN =+17dBm Maximum output, VCC =3.6V Maximum output, VCC =4.8V Maximum output, VCC =6.0V VPC =0.2V With external matching network; see application schematic PEP-3dB POUT =+24dBm for each tone POUT =+24dBm for each tone POUT =+24dBm for each tone To obtain 180mA idle current VPC =2.0V VPC =3.5V Threshold voltage at device input Two-tone Specification Average Two-Tone Power IM3 IM5 IM7 -23 +27 -30 -35 -45 3.3 1 2 0.5 2.7 to 7.5 360 0.5 3.5 dBm dBc dBc dBc V mA mA V V mA µA Power Control VPC PC Current Power Control “OFF” 1.5 0.2 Power Supply Power Supply voltage Supply Current Power Down Current 200 500 10 POUT =+30dBm, VCC =6.0V VPC =0.2V 2-68 Rev A4 010720 RF2125P Pin 1 Function RF IN Description RF input. This input is DC coupled, so an external blocking capacitor is required if this pin is connected to a DC path. An optimum match to 50 Ω is obtained by providing an external series capacitor of 4.3pF and then a shunt capacitor of 3.3pF; see the application schematic. Those values are typical for 1880MHz; other values may be required for other frequencies. Same as pin 1. Power control pin. For obtaining maximum performance the voltage on this pin can be used to set correct bias level. In a typical application this is implemented by a feedback loop. The feedback can be based on the actual supply current of the device, i.e. maintaining a fixed current level, or it can be based on the RF output power level to maintain a fixed RF power level (Automatic Level Control loop). A voltage of 0.5V or lower brings the part into power down state. Power supply pin for the bias circuits. External low frequency bypass capacitors should be connected if no other low frequency decoupling is nearby. RF output and bias for the output stage. The power supply for the output transistor needs to be supplied to this pin. This can be done through a quarter wave length microstrip line that is RF grounded at the other end, or through an RF inductor that supports the required DC currents. Optimum load impedance is achieved by providing a shunt capacitor of 3.0pF and a series capacitor of 3.9pF; see the application schematic. Those values are typical for 1880MHz; other values may be required for other frequencies. Since there are several output pins available, which are internally connected, one pin can be used for connecting the bias, another for connecting a (third) harmonic trap filter, and the other pins for the RF output. Same as pin 5. Same as pin 5. Same as pin 5. Ground connection. The backside of the package should be connected to the ground plane through a short path, i.e., vias under the device may be required. Interface Schematic 4 5 VCC RF OUT 6 7 8 Pkg Base RF OUT RF OUT RF OUT GND Rev A4 010720 2-69 POWER AMPLIFIERS 2 3 RF IN PC 2 RF2125P Application Schematic 1880MHz Operation 4.3 pF RF IN 2 POWER AMPLIFIERS 1 3.6 pF 2 VPD 3 0.01µ F 4 PACKAGE BASE BIAS CIRCUIT 8 3.9 pF 7 2.4 pF 6 5 33 nH RF OUT VCC 0.1µ F 100 pF 2-70 Rev A4 010720 RF2125P Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) RF IN J1 50 Ω C2 See Chart C1 See Chart 1 2 3 4 8 7 6 5 PACKAGE BASE L1 33 nH C4 See Chart C3 See Chart 50 Ω RF OUT J2 2 POWER AMPLIFIERS P1-3 C7 1 nF BIAS CIRCUIT C9 100 nF C8 1 nF P1-1 C5 1 µF C6 100 pF P1 P1-1 1 2 P1-3 3 VCC GND PC Capacitors are ATC type. The 2.7 pF capacitor is 2.4 pF in parallel with 0.3 pF. APPLICATION DCS1800 (1710 to 1785 MHz) DECT (1880 to 1990 MHz) C1 (pF) 3.3 C2 (pF) 7.5 C3 (pF) 3.6 C4 (pF) 3.9 3.0 3.9 2.7 3.6 2125402 Rev Broadband and Unlicensed PCS (1850 to 1910 MHz) 3.6 4.3 2.4 3.9 Broadband and Unlicensed PCS (1910 to 1970 MHz) 3.0 3.9 2.7 3.6 Rev A4 010720 2-71 RF2125P Evaluation Board Layout 1.0” x 1.5” Board Thickness 0.031”; Board Material FR-4 2 POWER AMPLIFIERS 2-72 Rev A4 010720