RF2132

RF2132 0 RoHS Compliant & Pb-Free Product Typical Applications • 4.8V AMPS Cellular Handsets • 4.8V CDMA/AMPS Handsets • 4.8V JCDMA/TACS Handsets Product Description The RF2132 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 4-cell CDMA/AMPS handheld digital cellular equipment, spread-spectrum systems, and other applications in the 800MHz to 950MHz band. The device is self-contained with 50Ω input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics over varying supply and control voltages. -A0.158 0.150 0.021 0.014 0.009 0.004 LINEAR POWER AMPLIFIER • Driver Amplifier in Cellular Base Stations • Portable Battery-Powered Equipment 0.392 0.386 0.069 0.064 0.050 0.244 0.230 8° MAX 0° MIN 0.010 0.008 0.060 0.054 0.035 0.016 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Package Style: Standard Batwing Features • Single 4.2V to 5.0V Supply • Up to 29 dBm Linear Output Power VCC 1 NC 2 RF IN 3 GND 4 GND 5 GND 6 GND 7 PC 8 16 GND 15 RF OUT 14 RF OUT 13 GND 12 GND 11 RF OUT 10 RF OUT 9 GND • 29dB Gain With Analog Gain Control • 45% Linear Efficiency • On-board Power Down Mode • 800MHz to 950MHz Operation BIAS Ordering Information RF2132 Linear Power Amplifier RF2132PCBA-41X Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev B10 060908 2-109 RF2132 Absolute Maximum Ratings Parameter Supply Voltage (No RF) Supply Voltage (POUT