RF2132PCBA

RF2132 2 Typical Applications • 4.8V AMPS Cellular Handsets • 4.8V CDMA/AMPS Handsets • 4.8V JCDMA/TACS Handsets • Driver Amplifier in Cellular Base Stations • Portable Battery-Powered Equipment LINEAR POWER AMPLIFIER 2 POWER AMPLIFIERS Product Description The RF2132 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 4-cell CDMA/AMPS handheld digital cellular equipment, spread-spectrum systems, and other applications in the 800MHz to 950MHz band. The device is self-contained with 50Ω input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics over varying supply and control voltages. 0.158 0.150 0.021 0.014 -A0.009 0.004 0.392 0.386 0.069 0.064 0.050 0.244 0.230 8° MAX 0° MIN 0.010 0.008 0.060 0.054 0.035 0.016 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü Package Style: Standard Batwing GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features • Single 4.2V to 5.0V Supply • Up to 29 dBm Linear Output Power • 29dB Gain With Analog Gain Control • 45% Linear Efficiency • On-board Power Down Mode • 800MHz to 950MHz Operation VCC 1 NC 2 RF IN 3 GND 4 GND 5 GND 6 GND 7 PC 8 16 GND 15 RF OUT 14 RF OUT 13 GND 12 GND 11 RF OUT 10 RF OUT 9 GND BIAS Ordering Information RF2132 RF2132 PCBA Linear Power Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev B9 010417 2-109 RF2132 Absolute Maximum Ratings Parameter Supply Voltage (No RF) Supply Voltage (POUT