RF2137
2
Typical Applications
• 4.8V AMPS Cellular Handsets • 4.8V CDMA/AMPS Handsets • 4.8V JCDMA/TACS Handsets • Driver Amplifier in Cellular Base Stations • Portable Battery-Powered Equipment
LINEAR POWER AMPLIFIER
2
POWER AMPLIFIERS
Product Description
The RF2137 is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 4-cell CDMA/AMPS hand-held digital cellular equipment, spread spectrum systems, and other applications in the 800MHz to 950MHz band. The device is self-contained with 50Ω input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics at all recommended supply voltages.
3.90 ± 0.10 -A0.43 ± 0.05 0.05 ± 0.05 Exposed Heat Sink
4.90 ± 0.10 1.27 6.00 ± 0.20 Dimensions in mm. 8° MAX 0° MIN 0.60 ± 0.15 0.22 ± 0.03 1.40 ± 0.10
2.70 ± 0.10
1.70 ± 0.10
NOTES: 1. Shaded lead is pin 1. 2. Lead coplanarity - 0.10 with respect to datum "A".
Optimum Technology Matching® Applied
Si BJT Si Bi-CMOS
ü
Package Style: SOIC-8 Slug
GaAs HBT SiGe HBT
GaAs MESFET Si CMOS
Features
• Single 4.2V to 6.0V Supply • Up to 29 dBm Linear Output Power • 27dB Gain With Analog Gain Control • 45% Linear Efficiency
VCC 1 RF IN 2 GND 3 PC 4 BIAS PACKAGE BASE GND
8 RF OUT 7 RF OUT 6 RF OUT 5 RF OUT
• On-board Power Down Mode • 800MHz to 950MHz Operation
Ordering Information
RF2137 RF2137 PCBA Linear Power Amplifier Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev B2 010720
2-115
RF2137
Absolute Maximum Ratings Parameter
Supply Voltage (No RF) Supply Voltage (POUT
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