RF2138PCBA

RF2138 2 Typical Applications • 3V GSM Cellular Handsets • 3V Dual-Band/Triple-Band Handsets • Commercial and Consumer Systems • Portable Battery-Powered Equipment • GPRS Compatible 3V GSM POWER AMPLIFIER 2 POWER AMPLIFIERS 0.38 0.40 sq. 2.00 1.50 sq. 0.28 0.80 0.13 Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Product Description The RF2138 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand held-digital cellular equipment and other applications in the 800MHz to 950MHz band. On-board power control provides over 70dB of control range with an analog voltage input, and provides power down with a logic “low” for standby operation. The device is self-contained with 50 Ω input and the output can be easily matched to obtain optimum power and efficiency characteristics. The RF2138 can be used together with the RF2140 for dual-band operation. The device is packaged in an ultra-small ceramic package, minimizing the required board space. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS 3.50 3.35 sq. 1 1.50 1.20 ALL SOLDER PAD TOLERANCES P0.05mm ro du ct ü GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features • Single 2.7V to 4.8V Supply Voltage • +36dBm Output Power at 3.5V • 32dB Gain with Analog Gain Control • 58% Efficiency • 800MHz to 950MHz Operation • Supports GSM and E-GSM 1 GND2 RF IN GND1 2 3 4 5 16 15 U pg r S ee 6 APC1 7 APC2 ad ed VCC2 VCC2 14 13 12 RF OUT 11 RF OUT 10 RF OUT 9 NC 8 VCC 2F0 NC NC P VCC1 Ordering Information RF2138 RF2138 PCBA 3V GSM Power Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Rev A9 011031 R F2 17 4.20 sq. 3.95 Package Style: MP16K01A 3 2-119 RF2138 Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage (VAPC1,2) DC Supply Current Input RF Power Duty Cycle at Max Power Output Load VSWR Operating Case Temperature Storage Temperature Rating -0.5 to +6.0 -0.5 to +3.0 2400 +13 50 10:1 -40 to +85 -55 to +150 Unit VDC V mA dBm % °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Parameter Overall Operating Frequency Range Usable Frequency Range Maximum Output Power Specification Min. Typ. Max. Unit Condition Temp=25 °C, VCC =3.5V, VAPC1,2 =2.6V, PIN =+6dBm, Freq=880MHz to 915MHz, 25% Duty Cycle, pulse width=1154 µs See evaluation board schematic. Temp=25 °C, VCC =3.5V, VAPC1,2 =2.6V Temp=+25 °C, VCC =3.2V, VAPC1,2 =2.6V Temp=+85 °C, VCC =3.2V, VAPC1,2 =2.6V Temp=25 °C, VCC =2.7V, VAPC1,2 =2.6V Temp=+85 °C, VCC =2.7V, VAPC1,2 =2.6V At POUT,MAX, VCC =3.2V At POUT,MAX, VCC =3.0V POUT =+20dBm POUT =+10dBm +34.0 58 58 12 5 +6 Total Efficiency Input Power for Max Output Output Noise Power +4 ro du ct +8 -72 -81 -40 -30 -38 -43 -55 -50 -40 -36 -30 2.5:1 4:1 Forward Isolation Second Harmonic Third Harmonic Fourth Harmonic Fifth Harmonic Sixth Harmonic All Non-Harmonic Spurious ad ed P -45 Input Impedance Optimum Source Impedance Input VSWR Output Load VSWR Output Load Impedance 10:1 S ee U pg r -50 -65 -65 -65 -65 50 40+j10 1.5-j1.7 2-120 R F2 17 dBm dBm dBm dBc dBc dBc dBc dBc dBm dBm Ω Ω Ω +35.0 +34.1 +34.0 +33.0 +32.5 50 880 to 915 800 to 950 +36 +35.2 MHz MHz dBm dBm dBm dBm dBm % % % % dBm dBm RBW=100kHz, 925MHz to 935MHz, POUT,MIN