RF2140PCBA

RF2140 2 Typical Applications • 3V DCS1800 (PCN) Cellular Handsets • 3V DCS1900 (PCS) Cellular Handsets • 3V Dual-Band/Triple-Band Handsets • Commercial and Consumer Systems • Portable Battery-Powered Equipment • GPRS Compatible 3V DCS POWER AMPLIFIER 2 POWER AMPLIFIERS Product Description The RF2140 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in DCS1800/1900 hand held-digital cellular equipment and other applications in the 1700MHz to 2000MHz band. On-board power control provides over 65dB of control range with an analog voltage input, and provides power down with a logic “low” for standby operation. The device is self-contained with 50 Ω input and the output can be easily matched to obtain optimum power and efficiency characteristics.The RF2140 can be used together with the RF2138 for dual-band operation. The device is packaged in an ultra-small ceramic package, minimizing the required board space. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS 3.50 3.35 sq. 1 1.50 1.20 0.38 0.40 sq. R F2 17 4 2.00 4.20 sq. 3.95 1.50 sq. ALL SOLDER PAD TOLERANCES P0.05mm 0.28 0.80 0.13 P ro du c t Package Style: MP16K01A ü GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features • Single 2.7V to 4.8V Supply Voltage • +33dBm Output Power at 3.5V • 27dB Gain with Analog Gain Control • 51% Efficiency • 1700MHz to 1950MHz Operation • Supports DCS1800 and PCS1900 1 AT_EN 2 RF IN 3 GND1 4 5 16 15 ee U pg r 6 7 APC2 8 VCC ad ed VCC2 14 13 12 RF OUT 11 RF OUT 10 RF OUT 9 2F0 NC GND2 VCC2 VCC2 VCC1 APC1 Ordering Information RF2140 RF2140 PCBA 3V DCS Power Amplifier Fully Assembled Evaluation Board S Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A12 011031 2-129 RF2140 Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage (VAPC) Enable Voltage (VAT_EN) DC Supply Current Input RF Power Duty Cycle at Max Power Output Load VSWR Operating Case Temperature Storage Temperature Rating -0.5 to +6.0 -0.5 to +3.0 -0.5 to +3.0 1500 +13 50 10:1 -40 to +85 -55 to +150 Unit VDC V V mA dBm % °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Parameter Specification Min. Typ. Max. Unit Condition Temp=25 °C, VCC =3.5V, VAPC1,2 =2.6V, VAT_EN =2.6V, PIN =+6dBm, Freq=1710MHz to 1910MHz, 25% Duty Cycle, pulse width=1154 µs See application schematic for tuning details. A different tuning is required. Temp=25 °C, VCC =3.5V, VAPC1,2 =2.6V Temp=+25 °C, VCC =3.2V, VAPC1,2 =2.6V Temp=+85 °C, VCC =3.2V, VAPC1,2 =2.6V Temp=25 °C, VCC =2.7V, VAPC1,2 =2.6V Temp=+85 °C, VCC =2.7V, VAPC1,2 =2.6V At POUT,MAX, VCC =3.5V At POUT,MAX, VCC =3.0V POUT =+20dBm POUT =+10dBm Overall Operating Frequency Range Usable Frequency Range Maximum Output Power 1710 to 1785 1850 to 1910 1700 to 2000 +33 +32.8 +31.5 +31 +30 51 51 15 10 +7 MHz MHz MHz dBm dBm dBm dBm dBm % % % % dBm dBm +32 +31.5 Total Efficiency P Recommended Input Power Range Output Noise Power +5 ro du ct +9 -79 -30 -35 -45 -50 -45 -45 -45 -36 2.2:1 3:1 +29.5 45 Forward Isolation Second Harmonic Third Harmonic Fourth Harmonic Fifth Harmonic Sixth Harmonic All Other Non-Harmonic Spurious Input Impedance Input VSWR ad ed S ee U pg r -37 -40 -60 -65 -50 -50 -50 50 Output Load VSWR Output Load Impedance 10:1 4.5-j3.9 Ω 2-130 R F2 17 dBm dBm dBc dBc dBc dBc dBc dBm Ω RBW=100kHz, 1805MHz to 1880MHz and 1930MHz to 1990MHz, POUT,MIN