RF2145PCBA

RF2145 2 Typical Applications • 4.8V DCS1800/1900 Handsets • 3V DECT Handsets and Base Stations • Commercial and Consumer Systems • Portable Battery Powered Equipment DCS1800/1900 POWER AMPLIFIER 2 POWER AMPLIFIERS Product Description The RF2145 is a high power, high efficiency amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in a 4-cell DCS1800 or DCS1900 handset. The device is packaged in a 16-lead plastic package with wide ground leads, and is self-contained with the exception of the output matching network and power supply feed line. Only a single positive voltage is required to operate with full power and efficiency, and on-board power control and power-down functions are provided. .158 .150 1 .009 .004 .069 .064 .020 .014 .392 .386 .050 .244 .230 8°MAX 0°MIN .059 .054 .035 .016 .010 .008 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü Package Style: SOP-16 QBW1 GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features • Single 4.8V Power Supply • +32dBm Output Power • 28dB Small Signal Gain • 55% Power Added Efficiency • Power Control • 1700MHz to 1900MHz Frequency Range PC 1 GND 2 GND 3 VCC1 4 RF IN 5 GND 6 GND 7 NC 8 16 NC 15 GND 14 GND 13 RF OUT 12 RF OUT 11 GND 10 GND 9 NC Ordering Information RF2145 RF2145 PCBA DCS1800/1900 Power Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev B5 010329 2-141 RF2145 Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage (VPC) DC Supply Current Input RF Power Output Load VSWR Ambient Operating Temperature Storage Temperature Rating -0.5 to +7.5 -0.5 to +3.0 675 +12 5:1 -40 to +85 -40 to +150 Unit VDC V mA dBm °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Parameter Overall Operating Frequency Range Usable Frequency Range Maximum Output Power Total Efficiency Input Power for Max Output Input Intermodulation Distortion Specification Min. Typ. Max. Unit Condition T=25 °C, VCC =4.8V, VPC =2.5V, PIN =+8dBm, Freq=1750MHz 1710 to 1785 1850 to 1910 1700 to 1990 +32 55 +8 -57 MHz MHz dBm % dBm dBc 1/8 Duty cycle with 600 µs pulse width At maximum output power Input signal consists of F1 at 1785MHz at +8dBm, F2 at 1765MHz at -42dBm. Output power at F1 is set to +32.5dBm. Specified power level at 1805MHz relative to F1. This refers to the amount of TX band noise which converts into the receive band. Input signal consists of F1 at 1785MHz at +8dBm, F2 at 1765MHz at -32dBm. Output power at F1 is set to +32.5dBm. Specified power level at 1805MHz relative to F1. This refers to the amount of TX band noise which converts into the receive band. Any gain setting In “OFF” state, PIN =+8dBm -48 dBc Output Noise Power in Receive Band Isolation Second Harmonic Third Harmonic Input Impedance Input VSWR Output Load VSWR 3:1 -137 -25 -48