RF2152PCBA-J

RF2152 2 Typical Applications • 3V CDMA/AMPS Cellular Handsets • 3V JCDMA/TACS Cellular Handsets • 3V TDMA/AMPS Cellular Handsets • Spread-Spectrum Systems • CDPD Portable Data Cards • Portable Battery-Powered Equipment DUAL-MODE CDMA/AMPS OR TDMA/AMPS 3V POWER AMPLIFIER 2 POWER AMPLIFIERS D E RS F IG 21 62 N /R S .157 .150 .012 .008 .003 .001 1 Product Description The RF2152 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA/AMPS handheld digital cellular equipment, spread-spectrum systems, and other applications in the 800MHz to 950MHz band. The device is self-contained with 50 Ω input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics. The package is a PSSOP-16 with backside ground. .197 .189 .025 .244 .228 8 °MAX 0°MIN .030 .018 .009 .008 N E ro W d Optimum Technology Matching® Applied Si BJT Si Bi-CMOS uc ts Refer to “Handling of PSOP and PSSOP Products” on page 16-15 for special handling information. ! Package Style: PSSOP-16 GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features • Single 3V Supply • 28dBm Linear Output Power • 30dB Linear Gain • 35% Linear Efficiency • On-board Power Down Mode • 800MHz to 960MHz Operation VCC LTUNE NC VCC1 N SO ee T GND1 RF IN VPD VPD UF pg O ra R de d P 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 MODE NC BIAS CIRCUITS RF OUT RF OUT RF OUT NC NC NC Ordering Information RF2152 Dual-Mode CDMA/AMPS or TDMA/AMPS 3V Power Amplifier RF2152 PCBA-N Fully Assembled Evaluation Board 824-849MHz RF2152 PCBA-J Fully Assembled Evaluation Board 877-924MHz RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com PACKAGE BASE GND Functional Block Diagram Rev A8 001109 F2 19 2 .059 .051 .062 .070 EXPOSED HEATSINK .102 .110 2-155 RF2152 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (POUT ≤ 31dBm) DC Supply Current Mode Voltage (VMODE) Control Voltage (VPD) Input RF Power Operating Ambient Temperature Storage Temperature Moisture Sensitivity Rating +8.0 +5.2 1.0 +3.0 +3.0 +12 -40 to +85 -40 to +150 JEDEC LEVEL 5 Unit VDC VDC A VDC VDC dBm °C °C Refer to “Handling of PSOP and PSSOP Products” on page 16-15 for special handling information. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Parameter Overall Usable Frequency Range Typical Frequency Range Linear Gain Second Harmonic (including second harmonic trap) Max CW Output Power Total Efficiency (AMPS mode) Maximum Linear Output Power (CDMA Modulation) Total Linear Efficiency Adjacent Channel Power Rejection Adjacent Channel Power Rejection Input VSWR Output Load VSWR Noise Figure Noise Power POUT =15dBm POUT =28dBm POUT =31dBm Specification Min. Typ. Max. 800 824-849 877-925 30 -38 31.5 45 28.5 35 -46 -58 28 -32 31 40 28 N E ro W d uc ts 30 -44 -56 < 2:1 6.0 86.5 89.3 92.3 3.4 90 UF pg O ra R de d P 5.9 Power Supply N SO ee T Power Supply Voltage Idle current Idle current 3.0 200 10 VPD current Turn On/Off time Total Current (Power down) VPD “Low” Voltage VPD “High” Voltage MODE “High” Voltage MODE “Low” Voltage 2.7 2.1 0 2.8 2.8 0 2-156 D E RS F IG 21 62 N /R S Unit 960 33 -42 32 55 29 MHz MHz MHz dB dBc dBm % dBm % dBc dBc Pout=28dBm Tuned for CDMA Tuned for CDMA 38 -50 -62 ACPR@885kHz ACPR@1980kHz 10:1 6.1 dB dBm dBm dBm V mA mA mA 20dBm) Pins7,8, Vpd=2.8V (Pin 7 typ. not connected, I=5mA for Pin 8) F2 19 2 Rev A8 001109 RF2152 Pin 1 2 Function VCC LTUNE Description Power supply for input bias circuitry. A 100 pF high frequency bypass capacitor is recommended. Interstage tuning. This pin will connect to a shunt inductor used for interstage tuning. For 824MHz to 849MHz a 1.5nH discrete inductor is used; for 877MHz to 925MHz a shorted transmission line presenting 0.7 nH of inductance or discrete inductor may be used. This inductor should be placed as close to the pin as possible. No connection. Grounding pin is recommended. Power supply for stage 1. VCC should be fed through a 25nH or greater inductor with a decoupling capacitor on the VCC side. Ground for stage 1. Keep traces physically short and connect immediately to ground plane for best performance. This ground should be isolated from the backside ground contact. RF input. An external DC blocking capacitor is required if this port is connected to a DC path to ground or a DC voltage. See pin 6. See pin 6. Interface Schematic 5 6 GND1 RF IN D E RS F IG 21 62 N /R S 7 VPD No connection. Grounding pin is recommended. No connection. Grounding pin is recommended. RF output and power supply for the output stage. The bias for the output stage is provided through this pin and pin 13. An external matching network is required to provide the optimum load impedance; see the application schematics for details. The first shunt cap of the matching circuit should be placed as close to the pin as possible. Same as pin 12. N E ro W d uc ts 8 9 10 11 12 VPD NC NC NC RF OUT Power Down control. When this pin is “low”, all circuits are shut off. When this pin is 2.8 volts, all circuits are operating normally. VPD requires a regulated 2.8 V for the amplifier to operate properly over all specified temperature and voltage ranges. A dropping resistor from a higher regulated voltage may be used to provide the required 2.8 V. A 100 pF high frequency bypass capacitor is recommended. Connect to pin 7. No connection. Grounding pin is recommended. 13 14 RF OUT RF OUT UF pg O ra R de d P See pin 12. See pin 12. Harmonic trap. This pin connects to the RF output but is used for providing a low impedance to the second harmonic of the operating frequency. An inductor or transmission line resonating with a shunt capacitor at 2f0 is connected to this pin. No connection. Grounding pin is recommended. The mode pin allows higher efficiency operation in AMPS and low power CDMA modes. MODE should be set “low” for highest efficiency in AMPS/TACS and in low power (