RF2153PCBA

RF2153 2 Typical Applications • PACS Handsets and Base Stations • 3V 1850-1910MHz CDMA PCS Handsets • 3V 1750-1780MHz CDMA PCS Handsets • 3V TDMA PCS Handsets • Spread-Spectrum Systems • Commercial and Consumer Systems CDMA/TDMA/PACS 1900MHZ 3V POWER AMPLIFIER 2 POWER AMPLIFIERS Product Description The RF2153 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 3V CDMA and TDMA handheld digital equipment, spread-spectrum systems, and other applications in the 1750MHz to 1910 MHz band. The device is packaged in a compact 4mmx4mm (LCC). The device’s frequency response can be optimized for linear performance in the 1750MHz to 1910MHz band. 4.20 3.95 3.50 3.35 1.50 1.20 0.38 0.40 sq. 1 3.50 3.35 4.20 3.95 2.00 1.50 sq. 0.28 0.13 0.80 ALL SOLDER PAD TOLERANCES P0.05mm Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ! Package Style: MP16KO1A GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features • Single 3V Supply • 29dBm Linear Output Power • 30dB Linear Gain • 33% Linear Efficiency CDMA • 40% Linear Efficiency TDMA • On-board Power Down Mode VCC2 VCC2 VCC2 VCC 14 8 VPD2 1 GND2 VCC1 RFIN 2 3 4 5 GND1 16 15 13 12 RF OUT 11 RF OUT 10 RF OUT 6 VPD1 7 V MODE BIAS GND 2F0 9 Ordering Information RF2153 RF2153 PCBA CDMA/TDMA/PACS 1900MHz 3V Power Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A18 001114 2-167 RF2153 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (POUT ≤ 31dBm) Mode Voltage (VMODE) Rating +8.0 +4.5 +3.5 +3.5 +10 -30 to +110 -30 to +150 Unit VDC VDC VDC VDC dBm °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Control Voltage (VPD) Input RF Power Operating Case Temperature Storage Temperature Parameter Overall - CDMA Usable Frequency Range Typical Frequency Range Small Signal Gain Linear Gain Second Harmonic (including second harmonic trap) Third Harmonic Fourth Harmonic Minimum Linear Output Power (CDMA or TDMA Modulation) Idle Current CDMA Linear Efficiency CDMA Adjacent Channel Power Rejection @ 1.25MHz Minimum Linear Output Power (CDMA Modulation) Input VSWR Output Load VSWR Turn On/Off Time Specification Min. Typ. Max. 1750 1750-1780 1850-1910 32 29 29 -35 -40 -45 29 90 30 100 33 -46 +29 < 2:1 10:1 40 200 -44 1910 Unit Condition T=25°C, VCC =3.4V unless otherwise specified 30 26 26 34 MHz MHz MHz dB dB dBc dBc dBc dBm mA dBc dBm Output Matching Network Tune Output Matching Network Tune VMODE =Low 0V to 0.5V VMODE =High 2.5V to 3.0V VMODE =High 2.5V to 3V POUT =29dBm, VCC =3.4V, VREG =2.8V VMODE =>2.5V POUT =29dBm, VCC =3.4V, VREG =2.8V POUT =29dBm, VCC =3.4V, VREG =2.8V VCC =3.0V, VREG =2.8V 28 No Damage. µs T=25°C, VCC =3.4V unless otherwise specified VMODE =0V to 0.5V POUT =30dBm, VCC =3.4V, VREG =2.8V POUT =30dBm POUT =30dBm Overall - TDMA Idle Current TDMA Linear Efficiency TDMA ACP @ 30kHz TDMA ALT @ 60kHz 30 250 40 -29 -49 500 -28 -48 mA % dBc dBc 2-168 Rev A18 001114 RF2153 Parameter Power Supply Power Supply Voltage VPD Current VPD and VMODE Current Total Current (Power down) VPD “Low” Voltage VPD “High” Voltage MODE “High” Voltage MODE “Low” Voltage Stability Spurious Noise Power 3.0 3.4 10 11 0 2.8 2.8 0 3:1 20:1 2.7 nH inductor Rev A18 001114 2-175 RF2153 Evaluation Board Schematic US - TDMA C7 1 uF P1-1 C2 4.7 uF + C26 10 nF C6 15 pF TL3 1 L3 1 nH 2 3 4 5 R3 0Ω C27 15 pF 6 7 8 R4 0Ω C13 15 pF 16 15 14 13 12 TL1 J1 RF IN 50 Ω µstrip C5 15 pF R2 11 10 9 2153402A 2 POWER AMPLIFIERS C12 10 nF C11 15 pF C8 10 nF C30 C4 15 pF L1* C14 1 pF C3 15 pF TL2 C1** J2 RF OUT C15** L4 15 nH P1 P1-1 1 2 VCC GND P2 P2-1 R1 4.7 kΩ P2-2 Tied together for optimum linearity P2-1 P2-2 1 2 VREG VMODE * L1 is a High Q inductor (i.e., Coilcraft 0805HQ-series). **C1 and C15 are High Q capacitors (i.e., Johanson C-series). Board TDMA (US) R2 (Ω) 100 C30 (pF) 10 C1 (pF) 4.7 L1 (nH) 12 C15 (pF) 1.8 Transmission Line Length TDMA (US) TL1 20 mils TL2 160 mils TL3 10 mils 2-176 Rev A18 001114 RF2153 Evaluation Board Layout US - CDMA Board Size 2.0" x 2.0" Board Thickness 0.031”, Board Material FR-4 2 POWER AMPLIFIERS Evaluation Board Layout Korea - CDMA Rev A18 001114 2-177 RF2153 Evaluation Board Layout US - TDMA 2 POWER AMPLIFIERS 2-178 Rev A18 001114