RF2155

RF2155 2 Typical Applications • Analog Communication Systems • 900MHz Spread Spectrum Systems • 400MHz Industrial Radios • Driver Stage for Higher Power Applications • 3V Applications 3V PROGRAMMABLE GAIN POWER AMPLIFIER 2 POWER AMPLIFIERS Product Description The RF2155 is a 3V medium power programmable gain amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters or ISM applications operating at 915MHz. The device is self-contained with the exception of the output matching network and power supply feed line. A two-bit digital control provides 4 levels of power control, in 8dB steps. 0.158 0.150 0.021 0.014 -A0.009 0.004 0.392 0.386 0.069 0.064 0.050 0.244 0.230 8° MAX 0° MIN 0.010 0.008 0.060 0.054 0.035 0.016 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü Package Style: Standard Batwing GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features • Single 3V Supply • 500mW CW Output Power • 31dB Small Signal Gain • Up to 60% Efficiency • Digitally Controlled Output Power • 430MHz to 930MHz Frequency Range NC VCC1 VCC2 GND GND GND1 RF IN PD 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 G16 G8 RF OUT GND GND RF OUT NC NC Ordering Information RF2155 RF2155 PCBA 3V Programmable Gain Power Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev B3 010417 2-179 RF2155 Absolute Maximum Ratings Parameter Supply Voltage Power Down Voltage (VPD) DC Supply Current Input RF Power Output Load VSWR Ambient Operating Temperature Storage Temperature Rating -0.5 to +5.5 -0.5 to +3.3 500 +10 10:1 -30 to +85 -40 to +150 Unit VDC V mA dBm °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Parameter Overall Frequency Range Maximum CW Output Power Small Signal Gain Second Harmonic Third Harmonic Fourth Harmonic Input VSWR CW Efficiency Output Load VSWR Specification Min. Typ. Max. Unit Condition T=25 °C, VCC =3.6V, VPD =3.0V, ZLOAD =13 Ω, PIN =0dBm, Freq=915MHz 50 6:1 2.7 0 2.2 0 0.8 +25.5 +16.0 +8.0 -1.0 430 to 930 450 300 31 -30 -40 -36 2:1 56 MHz mW mW dB dBc dBc dBc % VCC =3.6V VCC =3.0V Without external second harmonic trap All gain settings G16=“high”, G8=“high”, PIN =0dBm Spurious