RF2155_1

RF2155 3V PROGRAMMABLE GAIN POWER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: Standard Batwing NC 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 G16 G8 RF OUT GND GND RF OUT NC NC Features Single 3V Supply 500mW CW Output Power 31dB Small Signal Gain Up to 60% Efficiency Digitally Controlled Output Power 430MHz to 930MHz Frequency Range VCC1 VCC2 GND GND GND1 RF IN PD Applications Analog Communication Systems 900MHz Spread Spectrum Systems 400MHz Industrial Radios Driver Stage for Higher Power Applications 3 V Applications Functional Block Diagram Product Description The RF2155 is a 3V medium power programmable gain amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters or ISM applications operating at 915MHz. The device is self-contained with the exception of the output matching network and power supply feed line. A two-bit digital control provides 4 levels of power control, in 8dB steps. Ordering Information RF2155 RF2155PCBA-41X 3V Programmable Gain Power Amplifier Fully Assembled Evaluation Board Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev B9 DS080128 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 10 RF2155 Absolute Maximum Ratings Parameter Supply Voltage Power Down Voltage (VPD) DC Supply Current Input RF Power Output Load VSWR Ambient Operating Temperature Storage Temperature Rating -0.5 to +5.5 -0.5 to +3.3 500 +10 10:1 -30 to +85 -40 to +150 Unit VDC V mA dBm °C °C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Parameter Overall Frequency Range Maximum CW Output Power Small Signal Gain Second Harmonic Third Harmonic Fourth Harmonic Input VSWR CW Efficiency Output Load VSWR Min. Specification Typ. Max. Unit Condition T=25 °C, VCC =3.6V, VPD =2.8V, ZLOAD =13 Ω, PIN =0dBm, Freq=915MHz 430 to 930 450 300 31 -30 -40 -36 2:1 50 6:1 2.7 0 2.2 0 0.8 +25.5 +15.0 +7.5 -2.5 2.8 0.5 3.7 2.5 0.3 1.0 +26.5 +18.5 +10.5 +1.5 3.0 0.8 5.0 3.0 0.5 1.6 +28.0 +21.0 +13.0 +4.0 100 56 MHz mW mW dB dBc dBc dBc All gain settings % G16=“high”, G8=“high”, PIN =0dBm Spurious