RF2162

Preliminary 0 Typical Applications • 3V CDMA/AMPS Cellular Handsets • 3V J-CDMA/TACS Cellular Handsets • 3V TDMA/AMPS Cellular Handsets Product Description The RF2162 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA/AMPS hand-held digital cellular equipment, spread-spectrum systems, and other applications in the 800MHz to 960MHz band. The RF2162 has an analog bias control voltage to maximize efficiency. The device is self-contained with 50 Ω input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics. The device is packaged in a compact 4mmx4mm, 16-pin, leadless chip carrier. RF2162 3V 900MHz LINEAR AMPLIFIER • Spread-Spectrum Systems • CDPD Portable Data Cards • Portable Battery-Powered Equipment 0.10 C B -B- 4.00 0.10 C B 2 PLCS 3.75 2 PLCS 2.00 0.80 TYP 2 A 1.60 2 PLCS 3.75 0.75 0.50 INDEX AREA Dimensions in mm. 1.50 SQ. 4.00 0.10 C A 2 PLCS 0.45 0.28 3.20 2 PLCS 2.00 0.10 C A 2 PLCS Shaded pin is lead 1. 12° MAX 0.05 0.00 0.10 M C A B 1.00 0.90 0.75 0.65 C 0.05 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Package Style: QFN, 16-Pin, 4x4 Features • Single 3V Supply • 29dBm Linear Output Power VCC BIAS VCC1 VCC1 GND • 29dB Linear Gain 2F0 • 35% Linear Efficiency • On-board Power Down Mode RF OUT RF OUT RF OUT 1 GND GND RFIN 2 3 4 5 VREG1 16 15 14 13 12 11 10 • 800MHz to 960MHz Operation Ordering Information RF2162 RF2162 PCBA 3V 900MHz Linear Amplifier Fully Assembled Evaluation Board 6 VMODE 7 VREG2 8 BIAS GND 9 GND Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A19 060208 2-227 RF2162 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (POUT ≤ 31dBm) Mode Voltage (VMODE) Control Voltage (VPD) Input RF Power Operating Case Temperature Storage Temperature Moisture Sensitivity Preliminary Rating Unit VDC VDC VDC VDC dBm °C °C +8.0 +4.5 +3.0 +3.0 +12 -30 to +110 -30 to +150 Modified JEDEC Level 2 Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Overall Usable Frequency Range Typical Frequency Range Linear Gain Second Harmonic (including second harmonic trap) Max CW Output Power Total Efficiency (AMPS mode) Maximum Linear Output Power (CDMA Modulation) Total Linear Efficiency Adjacent Channel Power Rejection Noise Power Maximum Linear Output Power (CDMA Modulation) Total Efficiency (AMPS mode) Max CW Output Power Total Linear Efficiency Adjacent Channel Power Rejection Input VSWR Output Load VSWR Specification Min. Typ. Max. 800 28 824-849 29 -30 31.5 50 29 30 35 -46 -58 -90 29 50 30.5 36 -46 -58